Preliminary Datasheet RJK1028DNS 100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 125 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 100 +12, -5 4 12 4 2 0.4 10 12.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 Page 1 of 6 RJK1028DNS Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 — — 1.2 — — — — — — — — — — — — — Typ — — — — 125 135 8.8 450 42 17 2.7 3.7 1.5 1.5 8.3 4.8 35 Max — ± 0.1 10 2.5 165 180 — — — — — — — — — — — Unit V A A V m m S pF pF pF nC nC nC ns ns ns — — — 5.6 0.82 27 — 1.07 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +12, -5 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 2 A, VGS = 10 V Note4 ID = 2 A, VGS = 4.5 V Note4 ID = 2 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 4.5 V ID = 4 A VGS = 10 V, ID = 2 A VDD 30 V RL = 15 Rg = 4.7 IF = 4 A, VGS = 0 Note4 IF =4 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 Page 2 of 6 RJK1028DNS Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 50 10 μs 15 10 0.1 Operation in this area is limited by RDS(on) n t io 50 100 150 0.01 0.001 0.1 200 1 3 10 Typical Transfer Characteristics 10 ID (A) Pulse Test 4.5 V 3.3 V 3.2 V 10 V 3.1 V 2.9 V 2.8 V 2 8 VDS = 5 V Pulse Test 6 3.0 V 4 4 25°C 2 Tc = 75°C VGS = 2.7 V 4 6 8 –25°C Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 900 ID = 5 A 600 300 2A 1A 3 6 Gate to Source Voltage R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 9 12 VGS (V) 1 2 3 4 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1200 0 10 Static Drain to Source On State Resistance RDS(on) (mΩ) 2 Drain to Source Voltage 0 100 300 Typical Output Characteristics 6 0 30 Ambient Temperature Ta (°C) Drain Current 8 0.3 Drain to Source Voltage VDS (V) 10 ID (A) PW = 10 ms Ta = 25 °C 1 shot Pulse 0 Drain Current 1 era 5 10 0μ 1m s s Op Drain Current ID (A) 10 DC Channel Dissipation Pch (W) 20 5 VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Pulse Test 300 VGS = 4.5 V 100 10 V 30 10 0.1 0.3 1 3 Drain Current 10 ID 30 100 (A) Page 3 of 6 Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 500 1000 Pulse Test ID = 2 A 300 400 Capacitance C (pF) Static Drain to Source On State Resistance RDS(on) (mΩ) RJK1028DNS 300 VGS = 4.5 V 200 10 V 100 100 30 0 25 50 75 Crss 1 0 100 125 150 Case Temperature Tc (°C) VDD = 50 V 25 V 10 V 40 20 6 3 VDD = 50 V 25 V 10 V 0 0 0 2 4 Gate Charge 6 8 40 60 80 100 10 Qg (nc) 10 Reverse Drain Current IDR (A) 9 VGS (V) 60 Gate to Source Voltage VDS (V) Drain to Source Voltage VGS VDS 20 Reverse Drain Current vs. Source to Drain Voltage 12 ID = 4 A VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 80 Coss 10 3 0 –25 Ciss Pulse Test 8 6 10 V 5V 4 VGS = 0, –5 V 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Energy EAS (mJ) 0.5 IAP = 2 A VDD = 50 V duty < 0.1% Rg ≥ 50 Ω 0.4 0.3 0.2 0.1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 Page 4 of 6 RJK1028DNS Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.2 θch − c(t) = γs (t) • θch − c θch − c = 12.5°C/W, Tc = 25°C 0.1 0.1 0.05 2 0.0 1 se 0 pul . 0 t ho 1s 0.03 0.01 10 μ PDM D= PW T PW T 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAS = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 30 V 90% td(on) R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 10% tr 90% td(off) tf Page 5 of 6 RJK1028DNS Preliminary Package Dimensions Previous Code 3.3 ± 0.1 ⎯ MASS[Typ.] 0.022g +0.15 −0.1 RENESAS Code PWSN0008JB-A 2.9 ± 0.1 0.1 Min 3.3 ± 0.1 0.8 Max 0.04Max 0Min Stand-off 0.22 Typ 0.65 Typ +0.15 −0.1 (2.55) 0.32 ± 0.08 0.4 0.575 Typ 2.27 ± 0.2 0.4 JEITA Package Code P-HWSON8-2.9x3.1-0.65 1.55 ± 0.2 Package Name HWSON-8 3.1 ± 0.1 Ordering Information Orderable Part Number RJK1028DNS-00-J5 Note: Quantity 5000 pcs Shipping Container Taping The symbol of 2nd "-" is occasionally presented as "#". R07DS0195EJ0400 Rev.4.00 Apr 11, 2013 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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