BS Series Silicon Epitaxial Planar Zener Diodes Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Ptot Tj Storage Temperature Range Tstg Unit 1) mW 175 O - 65 to + 175 O C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. Characteristics at Ta = 25 OC Parameter Symbol RthA Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100 mA 1) Value 500 E T M E S Junction Temperature 1) H C Symbol Max. 0.3 VF Unit 1) K/mW 1 V Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. Characteristics at Ta = 25 OC Zener Voltage Type VZ 1) Dynamic Resistance Reverse Leakage Current at lZT ZZT at lZT IR at VR Min. (V) Max. (V) (mA) Max. (Ω) (mA) Max. (µA) (V) 2V0BS 1.88 2.2 5 100 5 120 0.5 2V0BSA 1.88 2.1 5 100 5 120 0.5 2V0BSB 2.02 2.2 5 100 5 120 0.5 2V2BS 2.12 2.41 5 100 5 120 0.7 2V2BSA 2.12 2.3 5 100 5 120 0.7 2V2BSB 2.22 2.41 5 100 5 120 0.7 2V4BS 2.33 2.63 5 100 5 120 1 2V4BSA 2.33 2.52 5 100 5 120 1 2V4BSB 2.43 2.63 5 100 5 120 1 2V7BS 2.54 2.91 5 110 5 100 1 2V7BSA 2.54 2.75 5 110 5 100 1 2V7BSB 2.69 2.91 5 110 5 100 1 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/07/2009 BS Series Characteristics at Ta = 25 OC Zener Voltage 1) Type VZ Dynamic Resistance Reverse Leakage Current at lZT ZZT at lZT IR at VR Min. (V) Max. (V) (mA) Max. (Ω) (mA) Max. (µA) (V) 3V0BS 2.85 3.22 5 120 5 50 1 3V0BSA 2.85 3.07 5 120 5 50 1 3V0BSB 3.01 3.22 5 120 5 50 1 3V3BS 3.16 3.53 5 120 5 20 1 3V3BSA 3.16 3.38 5 120 5 20 1 3V3BSB 3.32 3.53 5 120 5 20 1 3V6BS 3.47 3.83 5 120 5 10 1 3V6BSA 3.47 3.68 5 120 5 10 1 3V6BSB 3.62 3.83 5 120 5 10 1 3V9BS 3.77 4.14 5 120 5 3V9BSA 3.77 3.98 5 120 5 3V9BSB 3.92 4.14 5 120 5 E T M E S H C 5 1 5 1 5 1 4V3BS 4.05 4.53 5 120 5 4V3BSA 4.05 4.26 5 120 5 5 1 5 1 4V3BSB 4.2 4.4 5 120 5 5 1 4V3BSC 4.34 4.53 5 120 5 4V7BS 4.47 4.91 5 100 5 5 1 5 1 4V7BSA 4.47 4.65 5 100 5 5 1 4V7BSB 4.59 4.77 5 100 5 4V7BSC 4.71 4.91 5 100 5 5 1 5 1 5V1BS 4.85 5.35 5 70 5 5 1.5 5V1BSA 4.85 5.03 5 5V1BSB 4.97 5.18 5 70 5 5 1.5 70 5 5 1.5 5V1BSC 5.12 5.35 5 70 5 5 1.5 5V6BS 5.29 5.88 5 40 5 5 2.5 5V6BSA 5.29 5.52 5 40 5 5 2.5 5V6BSB 5.46 5.7 5 40 5 5 2.5 5V6BSC 5.64 5.88 5 40 5 5 2.5 6V2BS 5.81 6.4 5 30 5 5 3 6V2BSA 5.81 6.06 5 30 5 5 3 6V2BSB 5.99 6.24 5 30 5 5 3 6V2BSC 6.16 6.4 5 30 5 5 3 6V8BS 6.32 6.97 5 25 5 2 3.5 6V8BSA 6.32 6.59 5 25 5 2 3.5 6V8BSB 6.52 6.79 5 25 5 2 3.5 6V8BSC 6.70 6.97 5 25 5 2 3.5 7V5BS 6.88 7.64 5 25 5 0.5 4 7V5BSA 6.88 7.19 5 25 5 0.5 4 7V5BSB 7.11 7.41 5 25 5 0.5 4 7V5BSC 7.33 7.64 5 25 5 0.5 4 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/07/2009 BS Series Characteristics at Ta = 25 OC Zener Voltage 1) Type VZ Dynamic Resistance Reverse Leakage Current at lZT ZZT at lZT IR at VR Min. (V) Max. (V) (mA) Max. (Ω) (mA) Max. (µA) (V) 8V2BS 7.56 8.41 5 20 5 0.5 5 8V2BSA 7.56 7.9 5 20 5 0.5 5 8V2BSB 7.82 8.15 5 20 5 0.5 5 8V2BSC 8.07 8.41 5 20 5 0.5 5 9V1BS 8.33 9.29 5 20 5 0.5 6 9V1BSA 8.33 8.7 5 20 5 0.5 6 9V1BSB 8.61 8.99 5 20 5 0.5 6 9V1BSC 8.89 9.29 5 20 5 0.5 6 10BS 9.19 10.3 5 20 5 0.2 7 10BSA 9.19 9.59 5 20 5 0.2 7 10BSB 9.48 9.9 5 20 5 10BSC 9.82 10.3 5 20 5 11BS 10.18 11.26 5 20 5 11BSA 10.18 10.63 5 20 5 11BSB 10.5 10.95 5 20 5 11BSC 10.82 11.26 5 20 5 12BS 11.13 12.3 5 25 5 12BSA 11.13 11.63 5 25 5 12BSB 11.5 11.92 5 25 5 12BSC 11.8 12.3 5 25 5 E T M E S H C 0.2 7 0.2 7 0.2 8 0.2 8 0.2 8 0.2 8 0.2 9 0.2 9 0.2 9 0.2 9 13BS 12.18 13.62 5 25 5 0.2 10 13BSA 12.18 12.71 5 25 5 0.2 10 13BSB 12.59 13.16 5 25 5 0.2 10 13BSC 13.03 13.62 5 25 5 0.2 10 15BS 13.48 15.02 5 25 5 0.2 11 15BSA 13.48 14.09 5 25 5 0.2 11 15BSB 13.95 14.56 5 25 5 0.2 11 15BSC 14.42 15.02 5 25 5 0.2 11 16BS 14.87 16.5 5 25 5 0.2 12 16BSA 14.87 15.5 5 25 5 0.2 12 16BSB 15.33 15.96 5 25 5 0.2 12 16BSC 15.79 16.5 5 25 5 0.2 12 18BS 16.34 18.3 5 30 5 0.2 13 18BSA 16.34 17.06 5 30 5 0.2 13 18BSB 16.9 17.67 5 30 5 0.2 13 18BSC 17.51 18.3 5 30 5 0.2 13 20BS 18.14 20.45 5 30 5 0.2 15 20BSA 18.14 18.96 5 30 5 0.2 15 20BSB 18.8 19.68 5 30 5 0.2 15 20BSC 19.52 20.45 5 30 5 0.2 15 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/07/2009 BS Series Characteristics at Ta = 25 OC Zener Voltage 1) Type VZ Dynamic Resistance Reverse Leakage Current at lZT ZZT at lZT IR at VR Min. (V) Max. (V) (mA) Max. (Ω) (mA) Max. (µA) (V) 22BS 20.23 22.61 5 30 5 0.2 17 22BSA 20.23 21.08 5 30 5 0.2 17 22BSB 20.76 21.65 5 30 5 0.2 17 22BSC 21.22 22.09 5 30 5 0.2 17 22BSD 21.68 22.61 5 30 5 0.2 17 24BS 22.26 24.81 5 35 5 0.2 19 24BSA 22.26 23.12 5 35 5 0.2 19 24BSB 22.75 23.73 5 35 5 24BSC 23.29 24.27 5 35 5 24BSD 23.81 24.81 5 35 5 27BS 24.26 27.64 5 45 5 27BSA 24.26 25.52 5 45 5 27BSB 24.97 26.26 5 45 5 27BSC 25.63 26.95 5 45 5 27BSD 26.29 27.64 5 45 5 30BS 26.99 30.51 5 55 5 30BSA 26.99 28.39 5 55 5 30BSB 27.7 29.13 5 55 5 30BSC 28.36 29.82 5 55 5 30BSD 29.02 30.51 5 55 5 33BS 29.68 33.11 5 65 33BSA 29.68 31.22 5 33BSB 30.32 31.88 5 33BSC 30.9 32.5 33BSD 31.49 36BS 32.14 36BSA 32.14 36BSB 32.79 34.49 5 75 5 0.2 27 36BSC 33.4 35.13 5 75 5 0.2 27 36BSD 34.01 35.77 5 75 5 0.2 27 39BS 34.68 38.52 5 85 5 0.2 30 39BSA 34.68 36.47 5 85 5 0.2 30 39BSB 35.36 37.19 5 85 5 0.2 30 39BSC 36 37.85 5 85 5 0.2 30 39BSD 36.63 38.52 5 85 5 0.2 30 H C 0.2 19 0.2 19 0.2 19 0.2 21 0.2 21 0.2 21 0.2 21 0.2 21 0.2 23 0.2 23 0.2 23 0.2 23 0.2 23 5 0.2 25 65 5 0.2 25 65 5 0.2 25 5 65 5 0.2 25 33.11 5 65 5 0.2 25 35.77 5 75 5 0.2 27 33.79 5 75 5 0.2 27 E T M E S 1) Tested with pulse tp = 20 ms. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/07/2009 BS Series Tj = 25 OC H C E T M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/07/2009