Preliminary Datasheet BCR08ES-14A 700V - 0.8A - Triac R07DS0971EJ0001 Rev.0.01 Nov 28, 2012 Low Power Use Features IT (RMS) : 0.8 A VDRM : 700 V IFGTI, IRGTI, IRGTIII : 5 mA or 10mA mode trigger is available (#B11, #B12) Non-Insulated Type Planar Passivation Type Surface Mounted Type Completed Pb Free Outline RENESAS Package code: PLZZ0004CA-A) (Package name: UPAK) 1 2 3 2, 4 4 1. 2. 3. 4. 1 3 Gate Terminal T2 Terminal T1 Terminal T2 Terminal Applications Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications Maximum Ratings Parameter Symbol Voltage class 14 Unit VDRM VDSM 700 840 V V Repetitive peak off-state voltageNote1 Non- repetitive peak off-state voltageNote1 Parameter RMS on-state current Symbol IT (RMS) Ratings 0.8 Unit A Surge on-state current ITSM 8 A I2t 0.26 A2s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 50 W W V A °C °C mg I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS0971EJ0001 Rev.0.01 Nov 28, 2012 Conditions Commercial frequency, sine full wave Note3 360° conduction, Ta= 40°C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Page 1 of 3 BCR08ES-14A Preliminary Electrical Characteristics Symbol BCR08ES-14A#B10 Min. Max. — 1.0 IDRM Parameter Repetitive peak off-state current On-state voltage Gate trigger Note2 voltage Gate trigger Note2 current VTM — 2.0 — 2.0 VFGT — 2.0 — 2.0 VRGT VRGT 2.0 2.0 VFGT — — — ― — — — 2.0 2.0 2.0 IFGT — 5 — IRGT IRGT IFGT — — — 5 5 VGD 0.2 Rth (j-a) — (dv/dt)c 0.5 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Note4 Notes: 1. 2. 3. 4. BCR08ES-14A#B11 Min. Max. — 1.0 BCR08ES-14A#B12 Unit Test conditions Min. Max. — 1.0 mA Tj = 125C VDRM applied — 2.0 V Tc = 25C, ITM =1.2 A instantaneous measurement — 2.0 V Tj = 25C, VD = 6 V — 2.0 V RL = 6 , RG = 330 — — 2.0 2.0 V V 5 — 10 ― — — — 5 5 7 — — — 10 10 10 mA mA — 0.2 — 0.2 — V 65 — 65 — 65 Tj = 125C VD = 1/2 VDRM C/W Junction to ambientNote3 — 0.5 — 0.5 — V/s Tj = 125C mA Tj = 25C, VD = 6 V mA RL = 6 , RG = 330 Gate open. Measurement using the gate trigger characteristics measurement circuit. Soldering with ceramic plate (25 mm 25 mm t0.7 mm) Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.4 A/ms 3. Peak off-state voltage VD = 400 V R07DS0971EJ0001 Rev.0.01 Nov 28, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 3 BCR08ES-14A Preliminary Package Dimensions 1.5 1.5 3.0 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max MASS[Typ.] 0.050g 1.5 ± 0.1 0.44 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Orderable Part Number BCR08ES-14AT14#B10 BCR08ES-14AT14#B11 BCR08ES-14AT14#B12 R07DS0971EJ0001 Rev.0.01 Nov 28, 2012 Packing Embossed Tape Embossed Tape Embossed Tape Quantity 4000 pcs. 4000 pcs. 4000 pcs. Remark Taping direction “T1” Taping direction “T1” Taping direction “T1” Page 3 of 3 Notice 1. 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