RENESAS BCR08ES

Preliminary Datasheet
BCR08ES-14A
700V - 0.8A - Triac
R07DS0971EJ0001
Rev.0.01
Nov 28, 2012
Low Power Use
Features




 IT (RMS) : 0.8 A
 VDRM : 700 V
 IFGTI, IRGTI, IRGTIII : 5 mA or 10mA

mode trigger is available (#B11, #B12)
Non-Insulated Type
Planar Passivation Type
Surface Mounted Type
Completed Pb Free
Outline
RENESAS Package code: PLZZ0004CA-A)
(Package name: UPAK)
1
2
3
2, 4
4
1.
2.
3.
4.
1
3
Gate Terminal
T2 Terminal
T1 Terminal
T2 Terminal
Applications
Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Voltage class
14
Unit
VDRM
VDSM
700
840
V
V
Repetitive peak off-state voltageNote1
Non- repetitive peak off-state voltageNote1
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
0.8
Unit
A
Surge on-state current
ITSM
8
A
I2t
0.26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
50
W
W
V
A
°C
°C
mg
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Ta= 40°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Page 1 of 3
BCR08ES-14A
Preliminary
Electrical Characteristics
Symbol BCR08ES-14A#B10
Min.
Max.
—
1.0
IDRM
Parameter
Repetitive peak
off-state current
On-state voltage
Gate trigger
Note2
voltage
Gate trigger
Note2
current
VTM
—
2.0
—
2.0

VFGT
—
2.0
—
2.0


VRGT
VRGT
2.0
2.0
VFGT
—
—
—
―
—
—
—
2.0
2.0
2.0

IFGT
—
5
—


IRGT
IRGT
IFGT
—
—
—
5
5
VGD
0.2
Rth (j-a)
—
(dv/dt)c
0.5
Gate non-trigger
voltage
Thermal resistance
Critical-rate of rise of
off-state commutating
voltage Note4
Notes: 1.
2.
3.
4.
BCR08ES-14A#B11
Min.
Max.
—
1.0
BCR08ES-14A#B12 Unit
Test conditions
Min.
Max.
—
1.0
mA Tj = 125C
VDRM applied
—
2.0
V Tc = 25C, ITM =1.2 A
instantaneous
measurement
—
2.0
V Tj = 25C, VD = 6 V
—
2.0
V RL = 6 , RG = 330 
—
—
2.0
2.0
V
V
5
—
10
―
—
—
—
5
5
7
—
—
—
10
10
10
mA
mA
—
0.2
—
0.2
—
V
65
—
65
—
65
Tj = 125C
VD = 1/2 VDRM
C/W Junction to ambientNote3
—
0.5
—
0.5
—
V/s Tj = 125C
mA Tj = 25C, VD = 6 V
mA RL = 6 , RG = 330 
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Soldering with ceramic plate (25 mm  25 mm  t0.7 mm)
Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 3
BCR08ES-14A
Preliminary
Package Dimensions
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.53 Max
0.48 Max
MASS[Typ.]
0.050g
1.5 ± 0.1
0.44 Max
0.8 Min
φ1
0.4
4.5 ± 0.1
1.8 Max
Previous Code
UPAK / UPAKV
Unit: mm
(1.5)
0.44 Max
(0.2)
RENESAS Code
PLZZ0004CA-A
(2.5)
JEITA Package Code
SC-62
(0.4)
Package Name
UPAK
Ordering Information
Orderable Part Number
BCR08ES-14AT14#B10
BCR08ES-14AT14#B11
BCR08ES-14AT14#B12
R07DS0971EJ0001 Rev.0.01
Nov 28, 2012
Packing
Embossed Tape
Embossed Tape
Embossed Tape
Quantity
4000 pcs.
4000 pcs.
4000 pcs.
Remark
Taping direction “T1”
Taping direction “T1”
Taping direction “T1”
Page 3 of 3
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