HFD8N65U_HFU8N65U

BVDSS = 650 V
RDS(on) typ ȍ
HFD8N65U / HFU8N65U
ID = 6.0 A
650V N-Channel MOSFET
D-PAK
FEATURES
I-PAK
2
‰ Originative New Design
1
1
2
3
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
3
HFD8N65U
HFU8N65U
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 22.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
650
V
Drain Current
– Continuous (TC = 25୅)
6.0
A
Drain Current
– Continuous (TC = 100୅)
3.8
A
IDM
Drain Current
– Pulsed
24
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
280
mJ
IAR
Avalanche Current
(Note 1)
6.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
9.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
Power Dissipation (TA = 25୅)*
2.5
W
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
98
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.78
W/୅
-55 to +150
୅
300
୅
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
1.28
RșJA
Junction-to-Ambient*
--
50
RșJA
Junction-to-Ambient
--
110
Units
୅/W
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
HFD8N65U_HFU8N65U
June 2015
Device Marking
Week Marking
Package
Packing
Quantity
RoHS Status
HFD8N65U
YWWX
TO-252
Reel
2,500
Pb Free
HFD8N65U
YWWXg
TO-252
Reel
2,500
Halogen Free
HFU8N65U
YWWX
TO-251
Tube
80
Pb Free
HFU8N65U
YWWXg
TO-251
Tube
80
Halogen Free
Electrical Characteristics TC=25 qC
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.0 A
--
1.16
1.4
Ÿ
VGS = 0 V, ID = 250 Ꮃ
650
--
--
V
--
0.6
--
V/୅
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ǻBVDSS Breakdown Voltage Temperature
/ǻTJ
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
ID = 250 Ꮃ, Referenced to 25୅
VDS = 650 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 520 V, TC = 125୅
--
--
10
Ꮃ
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
1200
1560
Ꮔ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
100
130
Ꮔ
--
11.0
14.5
Ꮔ
--
35
70
Ꭸ
--
50
100
Ꭸ
--
120
240
Ꭸ
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 325 V, ID = 7.5 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520 V, ID = 7.5 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
--
50
100
Ꭸ
--
22.0
29.0
nC
--
6.5
--
nC
--
6.5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
6.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
24
VSD
Source-Drain Diode Forward Voltage
IS = 6.0 A, VGS = 0 V
--
--
1.4
V
IS = 7.5 A, VGS = 0 V
diF/dt = 100 A/ȝV
(Note 4)
--
350
--
Ꭸ
--
3.3
--
ȝ&
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=9.0mH, IAS=7.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
HFD8N65U_HFU8N65U
Package Marking and Odering Information
HFD8N65U_HFU8N65U
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
25oC
150oC
1
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1
100
0.1
101
2
4
Figure 1. On Region Characteristics
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
3
VGS = 10V
2
VGS = 20V
1
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0
0
4
8
12
16
0.1
0.0
20
0.2
0.4
Capacitances [pF]
1600
Ciss
1200
Coss
* Note ;
1. VGS = 0 V
2. f = 1 MHz
400
Crss
0
10-1
1.0
1.2
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
0.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2000
0.6
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
VDS = 130V
VDS = 325V
10
VDS = 520V
8
6
4
2
Note : ID = 7.5A
0
100
101
0
5
10
15
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
25
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFD8N65U_HFU8N65U
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 3.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
6
10 Ps
ID, Drain Current [A]
100 Ps
101
1 ms
10 ms
100 ms
DC
100
* Notes :
1. TC = 25 oC
4
2
2. TJ = 150 oC
3. Single Pulse
10-1 0
10
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
D=0.5
* Notes :
1. ZTJC(t) = 1.28 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
10-1
0.05
PDM
0.02
0.01
t1
single pulse
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
HFD8N65U_HFU8N65U
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
HFD8N65U_HFU8N65U
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
HFD8N65U_HFU8N65U
Package Dimension
{vTY\YhG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
HFD8N65U_HFU8N65U
Package Dimension
{vTY\XhG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡