BVDSS = 600 V RDS(on) typ ȍ HFS8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25 unless otherwise specified Parameter Drain-Source Voltage Value Units 600 V Drain Current – Continuous (TC = 25) 7.5 * A Drain Current – Continuous (TC = 100) 4.7 * A IDM Drain Current – Pulsed 30.0 * A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25) - Derate above 25 48 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.38 W/ -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 2.6 RșJA Junction-to-Ambient -- 62.5 Units /W క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ HFS8N60U August 2012 Device Marking Week Marking Package Packing Quantity RoHS Status HFS8N60U YWWX TO-220F(A) Tube 50 Pb Free HFS8N60US YWWX TO-220F(B) Tube 50 Pb Free HFS8N60U YWWXg TO-220F(A) Tube 50 Halogen Free HFS8N60US YWWXg TO-220F(B) Tube 50 Halogen Free TO-220F(A) : Dual Gauge, TO-220F(B) : Single Gauge Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 0.96 1.2 600 -- -- V -- 0.6 -- V/ Off Characteristics BVDSS Drain-Source Breakdown Voltage ǻBVDSS Breakdown Voltage Temperature /ǻTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ ID = 250 Ꮃ, Referenced to 25 VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TC = 125 -- -- 10 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ -- 1200 1560 Ꮔ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 100 130 Ꮔ -- 11.0 14.5 Ꮔ -- 35 70 Ꭸ -- 50 100 Ꭸ -- 120 240 Ꭸ Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 7.5 A, RG = 25 (Note 4,5) VDS = 480 V, ID = 7.5 A, VGS = 10 V (Note 4,5) Gate-Drain Charge -- 50 100 Ꭸ -- 22.0 29.0 nC -- 6.5 -- nC -- 6.5 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 7.5 ISM Pulsed Source-Drain Diode Forward Current -- -- 30 VSD Source-Drain Diode Forward Voltage IS = 7.5 A, VGS = 0 V -- -- 1.4 V IS = 7.5 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 350 -- Ꭸ -- 3.3 -- ȝ& trr Reverse Recovery Time Qrr Reverse Recovery Charge A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=9.0mH, IAS=7.5A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ HFS8N60U Package Marking and Odering Information HFS8N60U Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 10 ID, Drain Current [A] ID, Drain Current [A] Top : 25oC 150oC 1 -25oC * Notes : 1. VDS= 30V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 10-1 100 0.1 101 2 4 Figure 1. On Region Characteristics 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 2. Transfer Characteristics 2 IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 3 VGS = 10V 1 VGS = 20V 10 1 150oC 25oC * Notes : 1. VGS= 0V 2. 300us Pulse Test Note : TJ = 25oC 0 0 4 8 12 16 0.1 0.0 20 0.2 0.4 1600 Capacitances [pF] 1.0 1.2 Ciss 1200 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 400 Crss 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2000 0.6 VSD, Source-Drain Voltage [V] ID, Drain Current [A] VDS = 120V VDS = 300V 10 VDS = 480V 8 6 4 2 Note : ID = 7.5A 0 10-1 100 101 0 0 5 10 15 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 25 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS8N60U Typical Characteristics 1.1 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250PA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 3.75 A 0.5 0.0 -100 200 -50 0 100 150 200 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 8 Operation in This Area is Limited by R DS(on) 10 Ps 100 Ps 1 ms 6 ID, Drain Current [A] 101 10 ms 100 ms 100 DC 10-1 * Notes : 1. TC = 25 oC 4 2 o 10-2 0 10 2. TJ = 150 C 3. Single Pulse 101 102 0 25 103 50 75 Figure 9. Maximum Safe Operating Area 100 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] ZTJC(t), Thermal Response ID, Drain Current [A] 50 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0.2 * Notes : 1. ZTJC(t) = 2.6 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.1 0.05 10-1 0.02 PDM 0.01 t1 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ HFS8N60U Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ HFS8N60U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ HFS8N60U Package Dimension {vTYYWmGOhPG ±0.20 ±0.20 2.54±0.20 0.70±0.20 6.68±0.20 0 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 ± ij .20 0.80±0.20 0.50±0.20 2.54typ 2.54typ క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡ HFS8N60U Package Dimension {vTYYWmGOiPG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡