BVDSS = 600 V RDS(on) typ ȍ HFD6N60U / HFU6N60U ID = 4.8 A 600V N-Channel MOSFET D-PAK FEATURES I-PAK 2 Originative New Design 1 1 2 3 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 3 HFD6N60U HFU6N60U 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25 unless otherwise specified Parameter Drain-Source Voltage Value Units 600 V Drain Current – Continuous (TC = 25) 4.8 A Drain Current – Continuous (TC = 100) 3.0 A IDM Drain Current – Pulsed 19.2 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 170 mJ IAR Avalanche Current (Note 1) 4.8 A EAR Repetitive Avalanche Energy (Note 1) 9.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (TA = 25)* 2.5 W PD Power Dissipation (TC = 25) - Derate above 25 95 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.76 W/ -55 to +150 300 Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 1.31 RșJA Junction-to-Ambient* -- 50 RșJA Junction-to-Ambient -- 110 Units /W * When mounted on the minimum pad size recommended (PCB Mount) క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD6N60U_HFU6N60U June 2015 Device Marking Week Marking Package Packing Quantity RoHS Status HFD6N60U YWWX TO-252 Reel 2,500 Pb Free HFD6N60U YWWXg TO-252 Reel 2,500 Halogen Free HFU6N60U YWWX TO-251 Tube 80 Pb Free HFU6N60U YWWXg TO-251 Tube 80 Halogen Free Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.4 A -- 1.33 1.66 VGS = 0 V, ID = 250 Ꮃ 600 -- -- V -- 0.6 -- V/ Off Characteristics BVDSS Drain-Source Breakdown Voltage ǻBVDSS Breakdown Voltage Temperature /ǻTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current ID = 250 Ꮃ, Referenced to 25 VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TC = 125 -- -- 10 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ -- 870 1130 Ꮔ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 80 105 Ꮔ -- 10 13 Ꮔ -- 30 60 Ꭸ Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 6.0 A, RG = 25 (Note 4,5) VDS = 480 V, ID = 6.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge -- 40 80 Ꭸ -- 80 160 Ꭸ -- 40 80 Ꭸ -- 16.0 21.0 nC -- 5.0 -- nC -- 4.5 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 4.8 ISM Pulsed Source-Drain Diode Forward Current -- -- 19.2 VSD Source-Drain Diode Forward Voltage IS = 4.8 A, VGS = 0 V -- -- 1.4 V IS = 6.0 A, VGS = 0 V diFGW $ȝV(Note 4) -- 275 -- Ꭸ -- 2.1 -- ȝ& trr Reverse Recovery Time Qrr Reverse Recovery Charge A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=8.7mH, IAS=6.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD6N60U_HFU6N60U Package Marking and Odering Information HFD6N60U_HFU6N60U Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 ID, Drain Current [A] ID, Drain Current [A] 101 Top : 25oC 150oC -25oC * Notes : 1. VDS= 30V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 10-1 100 0.1 2 101 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 4 3 VGS = 10V 2 VGS = 20V 1 10 1 150oC 25oC * Notes : 1. VGS= 0V 2. 300us Pulse Test Note : TJ = 25oC 0 0 3 6 9 12 0.1 0.0 15 1200 Capacitances [pF] 0.6 0.8 1.0 1.2 Ciss 900 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 300 Crss 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 0.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1500 0.2 VSD, Source-Drain Voltage [V] ID, Drain Current [A] VDS = 120V VDS = 300V 10 VDS = 480V 8 6 4 2 Note : ID = 6.0A 0 10-1 100 101 0 0 5 10 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 20 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFD6N60U_HFU6N60U Typical Characteristics 1.1 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250PA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 2.4 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 5 10 Ps 101 4 ID, Drain Current [A] 100 Ps 1 ms 10 ms 100 ms 100 DC * Notes : 1. TC = 25 oC 3 2 1 2. TJ = 150 oC 3. Single Pulse 10-1 100 101 102 0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZTJC(t), Thermal Response ID, Drain Current [A] Operation in This Area is Limited by R DS(on) D=0.5 * Notes : 1. ZTJC(t) = 1.31 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.2 0.1 10-1 0.05 PDM 0.02 0.01 t1 single pulse -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD6N60U_HFU6N60U Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD6N60U_HFU6N60U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD6N60U_HFU6N60U Package Dimension {vTY\YhG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡ HFD6N60U_HFU6N60U Package Dimension {vTY\XhG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͥ͝ͻΦΟΖ͑ͣͦ͑͢͡