SDA1004SS TECHNICAL DATA DATASHEET 5309, Rev A Diode Array Devices Are Serialized Built And Screened To Space Level Quality Space Quality Level Conformance Testing Is Performed On Each Lot MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE O All rating at are TA = 25 C unless otherwise specified RATING Peak Inverse Voltage (DC) Average DC Output Current Per diode SYMBOL MAX UNIT PIV V IO 75 50 mA IFSM 500 mA IFRM 300 mA PD 400 mW PT 500 mW TJ -65 to +150 o TSTG -65 to +200 o VF1 1 V VFM 5 mV IR1 IR2 50 100 nA tRR 10 ns CT 5 pF (1) (2) Peak Single Cycle Surge Current (TP=8.3ms single half-Sine wave) Peak Repetitive Surge Current (1) (3) (TP=8.3ms half-Sine wave) Steady State Power Dissipation per Diode Junction Steady State Power Dissipation per Package (3) Max. Operating Junction Temperature Storage Temperature Range Max. Forward Voltage IF = 10mA Max. Forward Voltage Match IF = 10mA Max. Reverse Current VR = 20V VR = 40V Max. Reverse Recovery Time IF =10mA, IRM = 10mA Max. Capacitance f= 1MHz, VR = 0V Note: C C (1) Each diode (2) Derate at 2.4mA/0C above 250C (3) Derate at 4.0mA/0C above 250C ©2014 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681 Tel: (631) 586-7600 • Fax: (631) 242-9798 • www.sensitron.com • [email protected] SDA1004SS TECHNICAL DATA DATASHEET 5309, Rev A Electrical Schematic ©2014 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681 Tel: (631) 586-7600 • Fax: (631) 242-9798 • www.sensitron.com • [email protected] SDA1004SS TECHNICAL DATA DATASHEET 5309, Rev A Mechanical Outline .430 MAX .005+.003 -.001 .300 MIN 8 1 .125 MIN .280±.010 9 16 .300 MIN .050±.003 .350±.005 .030±.005 .017±.003 .115 MAX DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2014 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681 Tel: (631) 586-7600 • Fax: (631) 242-9798 • www.sensitron.com • [email protected]