Preliminary Datasheet RJK2576DPA 250V - 17A - MOS FET High Speed Power Switching R07DS0860EJ0200 Rev.2.00 Feb 05, 2013 Features Low on-resistance RDS(on) = 0.102 typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C) Very low gate charge Qg = 18 nC typ. (VDD = 200 V, VGS = 10 V, ID = 17 A, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ID (pulse)Note1 IDR Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature IDR (pulse) Note2 IAP Note2 EAR Pch Note3 ch-c Tch Tstg Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note4 Note1 Ratings 250 ±30 17 34 17 Unit V V A A A 34 7 3 65 1.93 150 –55 to +150 A A mJ W C/W C C PW 10 s, duty cycle 1% STch = 25C, Tch 150C Value at Tc = 25C Limited by maximum safe operation area R07DS0860EJ0200 Rev.2.00 Feb 27, 2013 Page 1 of 3 RJK2576DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 250 — — 2.5 — Typ — — — — 0.102 Max — 1 ±1 4.5 0.128 Unit V A A V Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1200 165 18 17 16 26 13 18 6.5 5 0.81 — — — — — — — — — — 1.35 pF pF pF ns ns ns ns nC nC nC V trr — 113 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 8.5 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 8.93 A VGS = 10 V RL = 14 Rg = 10 VDD = 200 V VGS = 10 V ID = 17 A IF = 17 A, VGS = 0 Note5 IF = 17 A, VGS = 0 diF/dt = 100 A/s Notes: 5. Pulse test R07DS0860EJ0200 Rev.2.00 Feb 27, 2013 Page 2 of 3 RJK2576DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DE-A Previous Code WPAK(3F)V MASS[Typ.] 0.075g 0.85Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK(3F) 4.23Typ 1.27Typ 1.27Typ 0.21Typ 0.5 ± 0.15 +0.1 -0.2 5.9 +0.1 -0.3 6.1 0.05Max 0Min Stand-off 0.545Typ 3.6 ± 0.2 3.92 ± 0.22 0.42 ± 0.08 4.90 ± 0.1 Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Orderable Part Number RJK2576DPA-00#J5A R07DS0860EJ0200 Rev.2.00 Feb 27, 2013 Quantity 3000 pcs Shipping Container Taping Page 3 of 3 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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