SILICON SCHOTTKY RECTIFIER DIE Very Low Forward

SENSITRON
SD040SA45A/B
SEMICONDUCTOR
Technical Data
Data Sheet 4958, Rev.-
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop (150 °C TJ Operation)
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
•
•
•
•
•
•
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings(1) :
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
IFSM
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
EAS
IAR
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
Max.
45
1
Units
V
A
20
A
TJ = 25 °C, IAS = 0.74 A,
L = 18 mH
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5V R
-
5.0
mJ
0.74
A
-65 to +150
-65 to +150
°C
°C
Max.
0.56
0.51
100
Units
V
V
µA
4.5
mA
53
pF
Electrical Characteristics(1) :
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
CT
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 125 °C
@V R = 45V, Pulse,
TJ = 25 °C
@V R = 45V, Pulse,
TJ = 125 °C
@V R = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
(1) in SHD package
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] •
SENSITRON
SD040SA45A/B
SEMICONDUCTOR
Technical Data
Data Sheet 4958, Rev.Mechanical Dimensions: In Inches / mm
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
0.034 ± 0.003 0.040 ± 0.003
(0.86 ± 0.077) (1.02 ± 0.077)
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top.
H
Typical Forward Characteristics
Typical Reverse Characteristics
1
Instantaneous Reverse Current - RI (mA)
10
150 °C
125 °C
10-1
100 °C
75 °C
10-2
50 °C
10
-3
10
-4
125 °C
25 °C
0
25 °C
10
10-1
Junction Capacitance - CT (pF)
Instantaneous Forward Current - FI (A)
10
0
150 °C
100
10-2
0.0
0.2
0.4
0.6
Forward Voltage Drop - V
F (V)
0.8
20
30
40
Reverse Voltage - VR (V)
50
Typical Junction Capacitance
50
45
40
35
30
25
20
15
10
0
10
20
30
40
Reverse Voltage - VR (V)
50
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]