UDZS3.6B Diodes Zener diode UDZS3.6B zExternal dimensions (Unit : mm) 1.25±0.1 zLand size figure (Unit : mm) 0.8MIN. 0.1±0.1 0.05 1.7±0.1 2.1 zFeatures 1) Compact, 2-pin mini-mold type for high-density mounting. (UMD2) 2) High reliability. 3) Can be mounted automatically, using chip mounter. 0.9MIN. 2.5±0.2 zApplications Constant voltage control UMD2 zStructure 0.7±0.2 0.1 0.3±0.05 zConstruction Silicon epitaxial planar ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) EX. UDZS3.6B z Taping specifications (Unit : mm) 0.3±0.1 8.0±0.2 2.75 1.40±0.1 4.0±0.1 2.8±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Operating temperature Symbol P Tj Tstg Topr Limits 200 150 -55 to +150 -55 to +150 Unit mW ℃ ℃ ℃ Rev.A 1/4 UDZS3.6B Diodes zElectrical characteristics (Ta=25°C) Symbol Zener voltage :Vz(V) TYP. UDZS 3.6B UDZS 3.9B UDZS 4.3B UDZS 4.7B UDZS 5.1B UDZS 5.6B UDZS 6.2B UDZS 6.8B UDZS 7.5B UDZS 8.2B UDZS 9.1B UDZS 10B UDZS 11B UDZS 12B UDZS 13B UDZS 15B UDZS 16B UDZS 18B UDZS 20B UDZS 22B UDZS 24B UDZS 27B UDZS 30B UDZS 33B UDZS 36B MIN. 3.600 3.890 MAX. 3.845 4.160 4.170 4.550 4.980 5.490 6.060 6.650 7.280 8.020 8.850 9.770 10.760 11.740 12.910 14.340 15.850 17.560 19.520 21.540 23.720 26.190 29.190 32.150 35.070 4.430 4.750 5.200 5.730 6.330 6.930 7.600 8.360 9.230 10.210 11.220 12.240 13.490 14.980 16.510 18.350 20.390 22.470 24.780 27.530 30.690 33.790 36.870 Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Operating resistance :Zz(Ω) MAX. 100 100 100 100 80 60 60 40 30 30 30 30 30 30 37 42 50 65 85 100 120 150 200 250 300 Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Rising operataing resistance :Zz(Ω) Reverse current : IR(uA) MAX. 1000.0 1000.0 MAX. 10.0 5.0 5.0 2.0 2.0 1.0 1.0 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1000.0 800.0 500.0 200.0 100.0 60.0 60.0 60.0 60.0 60.0 60.0 80.0 80.0 80.0 80.0 80.0 100.0 100.0 120.0 150.0 200.0 250.0 300.0 Iz(mA) 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VR(V) 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 zType No. TYPE UDZS 3.6B UDZS 3.9B UDZS 4.3B UDZS 4.7B UDZS 5.1B UDZS 5.6B UDZS 6.2B UDZS 6.8B UDZS 7.5B UDZS 8.2B UDZS 9.1B UDZS 10B UDZS 11B TYPE NO. 62 72 82 92 A2 C2 E2 F2 H2 J2 L2 05 15 TYPE UDZS 12B UDZS 13B UDZS 15B UDZS 16B UDZS 18B UDZS 20B UDZS 22B UDZS 24B UDZS 27B UDZS 30B UDZS 33B UDZS 36B TYPE NO. 25 35 45 55 65 75 85 95 A5 C5 E5 F5 Rev.A 2/4 UDZS3.6B Diodes zElectrical characteristic curves (Ta=25°C) 10 0.1 5.1 4.7 0.01 5.6 6.8 4.3 6.2 3.9 7.5 8.2 9.1 10 3.6 11 12 13 15 16 18 22 20 24 27 30 33 36 0.001 0 5 10 15 20 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 10000 REVERSE SURGE MAXIMUM POWER:PRSM(W) POWER DISSIPATION:Pd(W) 250 PRSM 1000 200 150 100 50 0 25 50 75 100 125 150 t 100 10 1 0.1 0.001 0 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS 0.01 0.1 1 10 100 TIME:t(ms) PRSM-TIME CHARACTERISTICS 0.12 40 0.1 35 0.08 30 1000 0.06 25 0.04 20 0.02 15 0 10 -0.02 -0.04 5 -0.06 0 -0.08 -5 0 10 20 30 ZENER VOLTAGE:Vz(V) γz-Vz CHARACTERISTICS 40 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) TEMP.COEFFICIENCE:γz(mV/℃) TEMP.COEFFICIENCE:γz(%/℃) ZENER CURRENT:Iz(mA) 1 100 Rth(j-c) 10 Mounted on epoxy board IM=10mA IF=100mA 1 1ms time 300us 0.1 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.A 3/4 UDZS3.6B Diodes 1000 f=1MHz Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 1 2 3 4 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1 0 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS Ta=25℃ IZ=5mA n=30pcs 0.9 REVERSE CURRENT:IR(nA) 3.9 3.8 3.7 3.6 AVE:3.679V 3.5 Ta=25℃ VR=1.0V n=30pcs 0.8 0.7 0.6 0.5 0.4 0.3 0.4 0.6 0.8 1 60 1 4 0.2 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:0.0944nA 0.2 59 CAPACITANCE BETWEENTERMINALS:Ct(pF) 0 10 0.001 0.0001 0.001 ZENER VOLTAGE:Vz(V) 100 Ta=125℃ 100 REVERSE CURRENT:IR (nA) ZENER CURRENT:Iz(mA) 10 Ta=25℃ VR=0V f=1MHz n=10pcs 58 57 56 55 54 AVE:55.43pF 53 52 0.1 51 0 50 Vz DISRESION MAP IR DISRESION MAP Ct DISRESION MAP DYNAMIC IMPEDANCE:Zz(Ω) 10000 1000 100 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS 10 Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1