RFPD2580 RFPD2580 GaAs/GaN Power Doubler Hybrid 45MHz to 1200MHz Package: SOT-115J The RFPD2580 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and operates from 45MHz to 1200MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. V+ INPUT OUTPUT Features ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ Extremely High Output Capability ■ 22.5dB Min. Gain at 1200MHz ■ 450mA Max. at 24VDC Applications ■ 45MHz to 1200MHz CATV Amplifier Systems Ordering Information RFPD2580 Box with 50 pieces Absolute Maximum Ratings Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS141017 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 RFPD2580 Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 21.0 21.5 22.0 dB f = 45MHz 22.5 23.0 24.0 dB f = 1200MHz 1.0 1.5 2.5 dB f = 45MHz to 1200MHz 0.8 dB f = 45MHz to 1200MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 17 dB f = 640MHz to 870MHz 16 dB f = 870MHz to 1000MHz 15 dB f = 1000MHz to 1200MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 17 dB f = 870MHz to 1000MHz 16 dB f = 1000MHz to 1200MHz f = 50MHz to 1200MHz Power Gain [1] Slope Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 3.5 4.5 dB 420.0 450.0 mA V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 550MHz CTB -73 -68 dBc XMOD -65 -60 dBc CSO -76 -70 dBc CIN 55 60 VO = 61dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[2][4] dB V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 550MHz CTB -80 dBc XMOD -78 dBc CSO -80 dBc CIN 59 dB VO = 60dBmV at 1200MHz, 22dB extrapolated tilt, 79 analog channels plus 111 digital channels (-6dB offset)[3][4] 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +52.4dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +38dBmV to +47.4dBmV tilted output level, plus 111 digital channels, -6dB offset relative to the equivalent analog carrier. 4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141017 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 RFPD2580 Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 V+ 6 Nominal Min Max A 44,6 ± 0,2 44,4 44,8 B 13,6 ± 0,2 13,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 3,95 4,2 G 4 +0,2 / -0,05 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141017 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3