RENESAS HRL0103C-N

HRL0103C
Silicon Schottky Barrier Diode for Rectifying
REJ03G0367-0200
Rev.2.00
Mar 05, 2007
Features
• Low reverse voltage drop and suitable for high efficiency reverse current.
• Lineup of environmental friendly Halogen free type (HRL0103C-N)
• Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Part No.
Laser Mark
Package Name
Package Code
HRL0103C
HRL0103C-N
(Halogen-free type)
P
EFP
PXSF0002ZA-A
Pin Arrangement
1
P
Cathode mark
Mark
2
1. Cathode
2. Anode
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
Page 1 of 5
HRL0103C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Symbol
VRM *
Value
30
Unit
V
Reverse voltage
Average rectified current
VR
1
IO *
30
100
V
mA
Peak forward surge current
Non-Repetitive peak forward surge current
IFM
2
IFSM *
300
1
mA
A
Junction temperature
Storage temperature
Tj
Tstg
125
−55 to +125
°C
°C
1
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Forward voltage
VF1
VF2
—
—
—
—
0.40
0.60
V
V
Reverse current
IR1
IR2
—
—
—
—
0.1
0.2
µA
Capacitance
Thermal resistance
C
Rth(j-a)
—
—
—
800
8.0
—
pF
°C/W
Test Condition
IF = 10 mA
IF = 100 mA
VR = 5 V
VR = 10 V
VR = 0.5 V, f = 1 MHz
1
Polyimide board *
Notes: 1. Polyimide board
3.0
0.3
0.5
20h×15w×0.8t
Unit: mm
1.0
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
Page 2 of 5
HRL0103C
Main Characteristic
10–3
1.0
Pulse test
Pulse test
10–4
Ta = 75°C
10–2
Ta = 25°C
10–3
10
–4
10
–5
10–6
Reverse current IR (A)
Forward current IF (A)
10–1
0
0.2
0.4
0.6
0.8
10–5
Ta = 75°C
10–6
Ta = 50°C
10–7
Ta = 25°C
10–8
1.0
0
5
10
15
20
25
30
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
0.12
0.030
0A
0.10
t
0.08
D=1/6
sin(θ=180°)
D=1/3
D=1/2
0.06
DC
T
Tj = 25°C
t
D= —
T
Reverse power dissipation Pd (W)
Forward power dissipation Pd (W)
0V
0.04
0.02
0
0
0.05
0.10
0.15
0.025
D=5/6
t
T
t
D=—
T
Tj = 125°C
0.020
D=1/3
D=1/2
0.015
sin(θ=180°)
0.010
0.005
0
0
10
20
30
40
Forward current IF (A)
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Fig4. Reverse power dissipation vs. Reverse voltage
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
Page 3 of 5
HRL0103C
Average rectified current IO (mA)
120
100
VR=VRRM/2
Tj =125°C
Rth(j−a)=800°C/W
DC
80
D=1/2
sin(θ=180°)
60
D=1/3
D=1/6
40
20
0
−25
0
25
50
75
100
125
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
Page 4 of 5
HRL0103C
Package Dimensions
Package Name
EFP
JEITA Package Code

RENESAS Code
PXSF0002ZA-A
Previous Code
EFP / EFPV
MASS[Typ.]
0.0007g
D
b
E
HE
c
A
φb
e1
Pattern of terminal position areas
REJ03G0367-0200 Rev.2.00 Mar 05, 2007
Page 5 of 5
Reference
Symbol
A
b
c
D
E
HE
φb
e1
Dimension in Millimeters
Min
0.44
0.25
0.08
0.55
0.75
0.95
Nom
0.47
0.30
0.13
0.60
0.80
1.00
0.40
1.00
Max
0.50
0.35
0.18
0.65
0.85
1.05
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