HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type (HRL0103C-N) • Extremely small Flat Lead Package (EFP) is suitable for surface mount design. Ordering Information Part No. Laser Mark Package Name Package Code HRL0103C HRL0103C-N (Halogen-free type) P EFP PXSF0002ZA-A Pin Arrangement 1 P Cathode mark Mark 2 1. Cathode 2. Anode REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Page 1 of 5 HRL0103C Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Symbol VRM * Value 30 Unit V Reverse voltage Average rectified current VR 1 IO * 30 100 V mA Peak forward surge current Non-Repetitive peak forward surge current IFM 2 IFSM * 300 1 mA A Junction temperature Storage temperature Tj Tstg 125 −55 to +125 °C °C 1 Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Forward voltage VF1 VF2 — — — — 0.40 0.60 V V Reverse current IR1 IR2 — — — — 0.1 0.2 µA Capacitance Thermal resistance C Rth(j-a) — — — 800 8.0 — pF °C/W Test Condition IF = 10 mA IF = 100 mA VR = 5 V VR = 10 V VR = 0.5 V, f = 1 MHz 1 Polyimide board * Notes: 1. Polyimide board 3.0 0.3 0.5 20h×15w×0.8t Unit: mm 1.0 2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Page 2 of 5 HRL0103C Main Characteristic 10–3 1.0 Pulse test Pulse test 10–4 Ta = 75°C 10–2 Ta = 25°C 10–3 10 –4 10 –5 10–6 Reverse current IR (A) Forward current IF (A) 10–1 0 0.2 0.4 0.6 0.8 10–5 Ta = 75°C 10–6 Ta = 50°C 10–7 Ta = 25°C 10–8 1.0 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 0.12 0.030 0A 0.10 t 0.08 D=1/6 sin(θ=180°) D=1/3 D=1/2 0.06 DC T Tj = 25°C t D= — T Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V 0.04 0.02 0 0 0.05 0.10 0.15 0.025 D=5/6 t T t D=— T Tj = 125°C 0.020 D=1/3 D=1/2 0.015 sin(θ=180°) 0.010 0.005 0 0 10 20 30 40 Forward current IF (A) Reverse voltage VR (V) Fig3. Forward power dissipation vs. Forward current Fig4. Reverse power dissipation vs. Reverse voltage REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Page 3 of 5 HRL0103C Average rectified current IO (mA) 120 100 VR=VRRM/2 Tj =125°C Rth(j−a)=800°C/W DC 80 D=1/2 sin(θ=180°) 60 D=1/3 D=1/6 40 20 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.5 Average rectified current vs. Ambient temperature REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Page 4 of 5 HRL0103C Package Dimensions Package Name EFP JEITA Package Code RENESAS Code PXSF0002ZA-A Previous Code EFP / EFPV MASS[Typ.] 0.0007g D b E HE c A φb e1 Pattern of terminal position areas REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Page 5 of 5 Reference Symbol A b c D E HE φb e1 Dimension in Millimeters Min 0.44 0.25 0.08 0.55 0.75 0.95 Nom 0.47 0.30 0.13 0.60 0.80 1.00 0.40 1.00 Max 0.50 0.35 0.18 0.65 0.85 1.05 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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