RENESAS RJK1526DPE

RJK1526DPJ, RJK1526DPE, RJK1526DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1859-0100
Rev.1.00
Nov 06, 2009
Features
• Low on-resistance
RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L)
: PRSS0004AE-B
LDPAK(S)-(1)
4
: PRSS0004AE-C
LDPAK(S)-(2) )
D
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
2
3
1
2
3
S
3
RJK1526DPJ
RJK1526DPE
RJK1526DPF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 1 of 7
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
Ratings
150
±30
50
120
50
120
25
Unit
V
V
A
A
A
A
A
EARNote3
Pch Note2
θch-c
Tch
Tstg
46.8
100
1.25
150
–55 to +150
mJ
W
°C/W
°C
°C
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
150
—
—
3.0
—
Typ
—
—
—
—
0.036
Max
—
1
±0.1
4.5
0.042
Unit
V
μA
μA
V
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1800
380
56
35
141
86
15
46
12
21
1.0
—
—
—
—
—
—
—
—
—
—
1.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
120
—
ns
Body-drain diode reverse recovery time
Notes: 4. Pulse test
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 2 of 7
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 25 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 25 A
VGS = 10 V
RL = 3 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 50 A
IF = 50 A, VGS = 0 Note4
IF = 50 A, VGS = 0
diF/dt = 100 A/μs
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
100
PW
10
0
10
μs
Operation in this
area is limited by
RDS(on)
1
0.1
8V
7.5V
7V
60
6.5 V
Pulse Test
Ta = 25°C
40
6V
5.5 V
20
0
10
1000
100
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Tc = −25°C
25°C
75°C
80
60
40
20
VDS = 10 V
Pulse Test
0
2
4
6
8
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS (V)
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
8.5 V
9V
80 10 V
VGS = 5 V
Tc = 25°C
1 shot
0.01
0.1
1
Drain Current ID (A)
=
μs
Drain Current ID (A)
100
10
10
1000
VGS = 10 V
Ta = 25°C
Pulse Test
100
10
10
100
1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.10
VGS = 10 V
Pulse Test
0.08
ID = 50 A
0.06
10 A
0.04
25 A
0.02
0
-25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
1000
1000
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 3 of 7
1
10
100
1000
Reverse Drain Current IDR (A)
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
Crss
VGS = 0
f = 1 MHz
10
20
40
60
80
ID = 50 A
Ta = 25 °C
VGS
180
VDD = 120 V
60 V
30 V
VDS
120
80
40
60
80
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
40
20
0
0
20
0
Gate Charge Qg (nC)
60
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 4 of 7
12
4
VDD = 120 V
60 V
30 V
Drain to Source Voltage VDS (V)
VGS = 0 V
Ta = 25 °C
Pulse Test
16
8
60
100
100
Reverse Drain Current IDR (A)
240
0
0
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ta = 25°C
5
0
100
VDS = 10 V
4
3
ID = 10 mA
1 mA
2
0.1 mA
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Gate to Source Voltage VGS (V)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
e
0.0 puls
t
ho
1s
0.01
10 μ
D=
PW
T
PW
T
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
V DD
= 75 V
Vout
10%
10%
90%
td(on)
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 5 of 7
tr
10%
90%
td(off)
tf
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Package Dimensions
• RJK1526DPJ
JEITA Package Code
⎯
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
4.44 ± 0.2
(1.4)
Package Name
LDPAK(L)
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.4 ± 0.1
• RJK1526DPE
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
(1.5)
10.0
2.54 ± 0.5
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 6 of 7
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
RJK1526DPJ, RJK1526DPE, RJK1526DPF
• RJK1526DPF
JEITA Package Code
⎯
RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
(1.4)
4.44 ± 0.2
7.8
6.6
(2.3)
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
1.3 ± 0.15
10.0
(1.5)
8.6 ± 0.3
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
RJK1526DPE-J3
Quantity
1000 pcs
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 7 of 7
Shipping Container
Taping
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2