SK34 N0102 REV. - Sangdest Microelectronics (Nanjing) Co. Ltd.

SANGDEST
MICROELECTRONICS
SK34
Technical Data
Data Sheet N0102. Rev. -
Green products
SK34 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection
Applications
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions (In mm)
SMC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SK34
Technical Data
Data Sheet N0102. Rev. -
Green products
Marking Diagram:
Where XXXXX is YYWWL
SK34
YY
WW
L
= Part Name
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information
Package
SMC
(Pb-Free)
Device
SK34
Shipping
3000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Condition
-
Max.
40
Units
V
Average Forward Current
IF(AV)
50% duty cycle @TC =105℃
rectangular wave form
3.0
A
Peak One Cycle NonRepetitive Surge Current
IFSM
8.3 ms, half Sine pulse
75
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SK34
Technical Data
Data Sheet N0102. Rev. -
Green products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
Symbol
VF1
VF1
IR1
IR2
Typical Junction Capacitance
*
Cj
Condition
@ 3A, Pulse, TJ = 25℃
@ 3A, Pulse, TJ = 125℃
@VR = rated VR
TJ = 25℃
@VR = rated VR
TJ = 100℃
@VR = 4.0 V, Tc=25℃
fSIG = 1MHz
Max.
0.63
0.57
Units
V
V
50
uA
10
mA
60
pF
Specification
-55 to +150
-55 to +150
Units
℃
℃
1
A
1300
W
0.65
g
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Repetitve peek reverse
current
Repetitve peek avalanche
power
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
IRRM
Tp=2us F=1KHZsquare
PARM
Tp=2us Tj=25℃
wt
SMC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SK34
Technical Data
Data Sheet N0102. Rev. -
Green products
Typical Forward Characteristics
101
Instantaneous Forward Current - I
F
(A)
Instantaneous Reverse Current - I
R
(uA)
10
Typical Reverse Characteristics
1
125C
125 C
100
10-1
10-2
25C
10-3
0
25C
10
20
30
Reverse Voltage - V
40
R
50
(V)
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V F (V)
1.4
Junction Capacitance - C T (pF)
Typical Junction Capacitance
80
60
40
20
0
5
10
15
20
25
Reverse Voltage - V
R
30
(V)
35
40
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0102. Rev. -
SK34
Green products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •