SBR20200CT N0913 REV. - Sangdest Microelectronics (Nanjing

SBR20200CT
Technical Data
Data Sheet N0913, Rev. -
Green Products
SBR20200CT SCHOTTKY RECTIFIER
Applications:
z
z
z
z
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
z
z
z
z
z
z
z
z
z
150℃ TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions (In mm / Inches) and Marking:
Symbol
A
A1
A2
b
b1
c
D
D1
E
e
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
Min
4.42
1.17
2.59
0.71
0.36
14.94
8.85
10.01
6.04
12.7
3.74
2.54
Dimensions in
millimeters
Typical
4.57
1.27
2.69
0.81
1.27
0.38
15.24
9.00
10.16
2.54
5.06
6.24
13.56
3.5
3.84
2.74
7°
3°
4°
OPTION1 (HD)
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Max
4.72
1.37
2.89
0.96
0.61
15.54
9.15
10.31
6.44
13.78
4.04
2.94
SBR20200CT
Technical Data
Data Sheet N0913, Rev. -
Green Products
OPTION2 (CJ)
TO-220AB
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SBR20200CT
Technical Data
Data Sheet N0913, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
SBR
20
200
CT
SSG
YY
WW
L
= Device Type
= Forward Current (20A)
= Reverse Voltage (200V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
SBR20200CT
Package
Shipping
TO-220AB (Pb-Free)
50 pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
(per device)
Peak One Cycle
Non-Repetitive Surge Current
(per leg)
Symbol
VRWM
Max.
200
Units
V
IF(AV)
Condition
50% duty cycle @TC = 150°C,
rectangular wave form
20
A
IFSM
8.3 ms, half Sine pulse
120
A
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SBR20200CT
Technical Data
Data Sheet N0913, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
*
Symbol
VF1
VF2
Reverse Current (per leg) *
IR1
Junction Capacitance
(per leg)
CT
Condition
@ 10 A, Pulse, TC = 25 °C
@ 10 A, Pulse, TC = 125 °C
@VR = rated VR
TC = 25 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Max.
0.95
0.85
Units
V
V
1.0
mA
150
pF
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Junction Temperature
TJ
-
-55 to +150
°C
Storage Temperature
Tstg
-
-55 to +150
°C
3.5
°C/W
2
g
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
RθJC
wt
DC operation
TO-220AB
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SBR20200CT
Technical Data
Data Sheet N0913, Rev. -
Green Products
Instantaneous Reverse Current ( μA)
100
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
TJ=125℃
10
1
TJ=25℃
0.1
0.01
10
20
30
40
50
60
70
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
100
TJ=125℃
10
TJ=25℃
1
0.5
0.6
80
90
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Instantaneous Forward Current (A)
Junction Capacitance (PF)
1000
0.7
0.8
0.9
1
1.1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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1.2
100
SBR20200CT
Technical Data
Data Sheet N0913, Rev. -
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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