SANGDEST MICROELECTRONICS MBRD630CT Technical Data Data Sheet N1068, Rev. - Green Products MBRD630CT SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery charging Features: • • • • • • • • Popular DPAK outline Small foot print, surface moutable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRD630CT Technical Data Data Sheet N1068, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR D 6 30 CT SSG YY WW L = Device Type = Package type = Forward Current (6A) = Reverse Voltage (30V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DPAK (Pb-Free) MBRD630CT Shipping 2500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =105°C, rectangular wave form 8.3 ms, half Sine pulse Max. 30 Units V 6 A 75 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRD630CT Technical Data Data Sheet N1068, Rev. - Green Products Electrical Characteristics: Characteristics Symbol VF1 Max. Forward Voltage Drop* VF2 Max. Reverse Current (per leg) * IR1 IR2 Max. Voltage Rate of Change * dv/dt Condition @ 3 A, Pulse, TJ = 25 °C @ 6 A, Pulse, TJ = 25 °C @ 3 A, Pulse, TJ = 125 °C @ 6 A, Pulse, TJ = 125 °C @VR = rated VR TC = 25 °C @VR = rated VR TC = 125 °C - Max. 0.70 0.90 0.65 0.85 0.1 Units V V mA mA 15 10,000 V/μs Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Range Storage Temperature Range Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient Approximate Weight Case Style Symbol TJ Tstg RθJC Condition DC operation RθJA - wt - Specification -55 to +150 -55 to +150 6 Units °C °C °C/W 80 °C/W 0.39 g DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1068, Rev. - MBRD630CT Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1068, Rev. - MBRD630CT Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •