SANGDEST MICROELECTRONICS MBRF20100CTR Green Products Technical Data Data Sheet N0848, Rev. A MBRF20100CTR SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 175℃ ℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request OUTLINE DRAWING Mechanical Dimensions: In mm SYMBOL A A1 A2 A3 b b1 b2 b3 b4 c D E e e1 H1 L L1 L2 L3 ΦP1(上口) ΦP2(下口) Q Θ1 Θ2 Θ3 Θ4 Θ5 MIN. 4.30 1.10 2.80 2.50 0.50 1.10 1.50 1.20 1.60 0.55 14.80 9.96 6.50 12.70 1.60 0.80 0.60 3.30 2.99 2.50 TYP. 4.50 1.30 3.00 2.70 0.60 1.20 1.60 1.30 1.70 0.60 15.00 10.16 2.55 5.10 6.70 13.20 1.80 1.00 0.80 3.50 3.19 2.70 5° 4° 10° 5° 5° MAX. 4.70 1.50 3.20 2.90 0.75 1.35 1.75 1.45 1.85 0.75 15.20 10.36 6.90 13.70 2.00 1.20 1.00 3.70 3.39 2.90 ITO-220AB(HD) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF20100CTR Green Products Technical Data Data Sheet N0848, Rev. A Marking Diagram: Where XXXXX is YYWWL MBR F 20 100 CTR SSG YY WW L = Device Type = Package type = Forward Current (20A) = Reverse Voltage (100V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package ITO-220AB (Pb-Free) MBRF20100CTR Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =133°C, rectangular wave form 8.3 ms, half Sine pulse Max. 100 10(Per leg) 20(Per device) Units V A 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF20100CTR Green Products Technical Data Data Sheet N0848, Rev. A Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg)* Max. Reverse Current at DC condition (per leg) Max. Reverse Current (per leg)* Repetitive peak reverse current Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change RSM Isolation Voltage (t = 1.0 second, R. H. < =30%, TA = 25 °C) * Symbol VF1 VF2 IR1 IR2 IRRM CT LS dv/dt VISO Condition @ 5A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 25 °C @ 5A, Pulse, TJ = 125 °C @ 10A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C tp = 2 µs square F= 1 kHz @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body Clip mounting, the epoxy body away from the heatsink edge by more than 0.110" along the lead direction. Clip mounting, the epoxy body is inside the heatsink. Screw mounting, the epoxy body is inside the heatsink. Max. 0.80 0.90 0.70 0.80 1.0 Units V 6.0 mA 1 A 250 pF 8.0 nH 10,000 4500 V/µs V V mA 3500 1500 Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case (per leg) Approximate Weight Case Style Symbol TJ Tstg RθJC wt Condition DC operation - Specification -55 to +175 -55 to +175 3.5 Units °C °C °C/W 2 g ITO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBRF20100CTR Green Products Technical Data Data Sheet N0848, Rev. A 10000 μ A) Instantaneous Reverse Current (μ TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 1000 TJ=125℃ 100 10 TJ=25℃ 1 0.1 0.01 10 Reverse Voltage (V) 20 30 40 50 60 70 80 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.4 0.5 90 Percent of Rated Peak Reverse Voltage (%) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) 1000 0.6 0.7 0.8 0.9 1 1.1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0848, Rev. A MBRF20100CTR Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •