63SPB080(A)(100) N1023 REV. - Sangdest Microelectronics

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1023, Rev. -
63SPB080/A
63SPB100/A
Green Products
Power Surface Mount Schottky Rectifier
(80V/100V,60Amp)
Applications:
•
•
•
•
•
Switching power supply
Converters
Reverse battery protection
Redundant power subsystems
Many other high current AC/DC power supplies
Features:
•
•
•
•
•
•
•
•
•
175 °C TJ operation
Low forward voltage drop
High surge capacities
High frequency operation
Guaranteed reverse avalanche capability
Low profile surface mount package
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/ Inches
Suffix“R”Denotes Reversed Polarity
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
63SPB080/A
63SPB100/A
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1023, Rev. -
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(per leg)
Repetitive Avalanche
Current(per leg)
Symbol
VRWM
Condition
-
IF(AV)
50% duty cycle, rectangular
wave form
IFSM
8.3 ms, half Sine pulse
EAS
IAR
80
100
TJ=25℃,IAS=0.75A,
L=40 mH
IAS decaying linearly to 0 in
1 μsec Frequency limited
by TJ max. VA=1.5×VR
Max.
(63SPB080/A)
(63SPB100/A)
60
Units
V
A
860
A
11.25
mJ
0.75
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current (per
leg) *
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
Max. Voltage Rated of
Change
*
CJ
dv/dt
Condition
@ 60A, Pulse, TJ = 25 °C
@ 60A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
Max.
0.87
0.72
1.0
Units
V
V
mA
24.0
mA
1500
pF
10,000
V/μs
Specification
-55 to +175
-55 to +175
0.37
Units
°C
°C
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Case Style
Symbol
TJ
Tstg
RθJC
Condition
DC operation
°C/W
SPD-2/A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1023, Rev. -
63SPB080/A
63SPB100/A
Green Products
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1023, Rev. -
63SPB080/A
63SPB100/A
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •