ST8120 STB8120 STF8120 STD8120 N1359 REV.

ST8120
STB8120
STF8120
STD8120
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
Green Products
ST8120/STB8120/STF8120/STD8120
SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Ultralow forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Case styles
ST8120
TO-220AC
STB8120
STF8120
STD8120
ITO-220AC
D2PAK
Mechanical Dimensions: In Inches / mm
Symbol
TO-220AC
A
A1
A2
b
b1
c
D
D1
E
E1
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
DPAK
Dimensions in
millimeters
Min.
Typical
Max.
4.55
1.17
2.59
0.71
0.36
14.64
8.55
10.01
9.98
6.04
13.00
3.74
2.54
4.70
1.27
2.69
0.81
1.27
0.38
14.94
8.07
10.16
10.18
5.08
6.24
13.86
3.80
3.84
2.74
5°
4°
4°
4.85
1.37
2.89
0.96
0.61
15.24
8.85
10.31
10.38
6.44
14.08
4.04
2.94
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST8120
STB8120
STF8120
STD8120
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
Green Products
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
4.85
0.25
2.89
0.96
0.61
1.37
8.85
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
15.6
2.70
1.40
2.20
0.25BSC
5°
4°
4°
8°
D2PAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST8120
STB8120
STF8120
STD8120
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
Green Products
ITO-220AC
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST8120
STB8120
STF8120
STD8120
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
Green Products
DPAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST8120
STB8120
STF8120
STD8120
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
ST
B/F/D
8
120
SSG
YY
WW
L
ST8120
STB8120
STF8120
= Device Type
= Package type
= Forward Current (8A)
= Reverse Voltage (120V)
= SSG
= Year
= Week
= Lot Number
STD8120
Cautions:Molding resin
Epoxy resin UL: 94V-0
Ordering Information:
Device
Package
Shipping
ST8120
TO-220AC(Pb-Free)
50pcs / tube
STB8120
D²PAK(Pb-Free)
800pcs / reel
STF8120
ITO-220AC(Pb-Free)
50pcs / tube
STD8120
DPAK(Pb-Free)
2500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle
Non-Repetitive Surge Current
(per leg)
Symbol
VRWM
Max.
120
Units
V
IF(AV)
Condition
50% duty cycle @TC =100°C,
rectangular wave form
8
A
IFSM
8.3 ms, half Sine pulse
130
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
ST8120
STB8120
STF8120
STD8120
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Symbol
VF1
VF2
IR1
IR2
*
Condition
@ 8A, Pulse, TJ = 25 °C
@ 8A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
Max.
0.88
0.71
Units
V
V
0.6
mA
40
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to
Case(per leg)*
Approximate Weight
Case Style
Symbol
TJ
Tstg
ST8120
RθJC
2.8
wt
1.8
STB8120
2.8
STD8120
-55 to +150
-55 to +150
2.0
STF8120
Units
°C
°C
5.5
°C/W
1.85
0.39
1.8
TO-220AC/ D2PAK/ DPAK/ ITO-220AC
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1359, Rev. -
ST8120
STB8120
STF8120
STD8120
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •