E L E C T R O N I C SBL10B60CT/FCT Power Schottky Rectifier - 10Amp 60Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency □ Application -Switching-Mode Power Supply -Solar-System Control Box □ Absolute maximum ratings Symbol Ratings Unit Conditions IF(AV) 10 A Average Forward Current VRRM 60 V Repetitive Peak Reverse Voltage IFSM 120 A Peak Forward Surge Current VF 0.55 V Forward Voltage Drop Tj , Tstg -50 to +150 ºC Operating and Storage Temperature □ Electrical characteristics Parameters Symbol Ratings Conditions Per Leg at IF = 5A Maximum Instantaneous Forward Voltage Maximum Reverse Leakage Current VF IR 0.65V Tc = 25ºC 0.55V Tc = 125ºC Per Leg at VR = 60V 1.0mA Tc = 25ºC Per Leg Typical Thermal Resistance,Junction to Case Rθ (j-c) 2.2 ºC/W TO-220AB 4.5 ºC/W ITO-220AB Note : 1.Mounted on P.C.B with copper pad size 20mm x 30mm, thickness 1.5mm 2.Reverse Surge 3.0A @ 0.004ms, 10 cycle 3.Repetitive Peak Reverse Current (IRRM) 0.5A @ Per Leg at tp = 2μs, 1kHz November 2013 / Rev.7.0 http:// www.sirect.com 1 5 4 3 2 1 0 25 50 75 100 125 150 150 PEAK FORWARD SURGE CURRENT AMPERES 175 120 90 60 30 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 20 50 100 Figure 2. Maximum Non-repetitive Surge Current Figure 1. Forward Current Derating Curve TJ = 75ºC 1 TJ = 25ºC 0.1 0.01 TJ 25 ºC = TJ TJ = 125ºC 10 5.0 TJ 100 = 12 5º C 75 ºC 10 INSTANTANEOUS FORWARD CURRENT, (A) 1000 INSTANTANEOUS REVERSE CURRENT, (mA) 10 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE (ºC) = AVERAGE FORWARD CURRENT AMPERES SBL10B60CT/FCT 1.0 0.1 0 20 40 60 80 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE, VOLTS Figure 3. Typical Reverse Characteristics Figure 4. Typical Forward Characteristics 1.0 CAPACITANCE, (pF) 1000 100 TJ = 25ºC f = 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE, VOLTS Figure 5. Typical Junction Capacitance Sirectifier Semiconductor Inc. U.S.A.: [email protected] China: [email protected] Taiwan: [email protected] http:// www.sirect.com Hong Kong: [email protected] 2 SBL10B60CT/FCT SBL10B60CT SBL10B60FCT TO-220AB ITO-220AB L B L B M C M C D D K K A A E E F O O G I J H F P G I N H J H A1 N H A1 K K A2 A2 DIMENSIONS DIM INCHES DIMENSIONS MM NOTE DIM INCHES MM MIN MAX MIN MAX A .577 .640 14.65 16.25 B .386 .406 9.80 10.30 2.95 C .098 .114 2.50 2.90 6.30 6.90 D .258 .274 6.55 6.95 .350 8.25 8.90 E .315 .331 8.00 8.40 .126 .157 3.20 4.00 F .079 .161 2.00 4.10 G .492 .551 12.50 14.00 G .492 .571 12.50 14.50 H .096 .108 2.45 2.75 H .089 .106 2.25 2.70 I .028 .039 0.70 1.00 I .024 .035 0.60 0.90 J .010 .022 0.25 0.55 J .020 .028 0.50 0.70 K .146 .157 3.70 4.00 K .120 .138 3.05 3.50 L .167 .187 4.25 4.75 L .169 .189 4.30 4.80 M .045 .057 1.15 1.45 M .031 .063 0.80 1.60 N .089 .114 2.25 2.90 N .079 .112 2.00 2.85 O .047 .055 1.20 1.40 O .043 .055 1.10 1.40 P .047 .071 1.20 1.80 MIN MAX MIN MAX A .579 .606 14.70 15.40 B .392 .411 9.95 10.45 C .104 .116 2.65 D .248 .272 E .325 F http:// www.sirect.com NOTE 3