E L E C T R O N I C SBR24 ~ SBR220 Power Schottky Rectifier - 2Amp 40~200Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device -Halogen-Free □ Mechanical data -Case：Molded plastic -Epoxy：UL 94V-0 rate flame retardant -Terminals：Solder plated, solderable per MIL-STD-750,method 2026 -Polarity：Color band denotes cathode end -Weight：0.002 ounce 0.064 grams □ Maximum ratings and Electrical characteristics Parameters SBR24 SBR26 SBR210 SBR215 SBR220 UNIT Maximum Recurrent Peak Reverse Voltage 40 60 100 150 200 V Maximum RMS Voltage 28 42 70 105 140 V Maximum DC Blocking Voltage 40 60 100 150 200 V Maximum Average Forward Rectified Current 2 A Peak Forward Surge Current 50 A Maximum Instantaneous Forward Tc = 25ºC 0.50 0.65 0.8 0.88 0.90 Voltage at 2A Tc = 125ºC 0.40 0.50 0.66 0.69 0.72 Maximum Average Reverse Current Tc = 25ºC 0.5 0.05 at Rated DC Blocking Voltage Tc = 100ºC 20 10 V mA Typical Junction Capacitance 150 pF Typical Thermal Resistance RθJL (Note 1) 18 ºC/W Operating and Storage Temperature Range -50 to +125 -50 to +150 ºC Note : 1. Mounted on P.C.B with copper pad size 14mm x 14mm July 2013 / Rev.7.0 http:// www.sirectsemi.com 1 SB 1.6 PEAK FORWARD SURGE CURRENT AMPERES 2.0 1 R2 0– 1.2 2 R2 0 6 R2 SB 0.8 SB 4– R2 SB 0.4 0 0 25 50 75 100 125 150 50 40 30 20 10 0 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 1 2 AMBIENT TEMPERATURE (ºC) Figure 1. Forward Current Derating Curve 10 20 50 100 Figure 2. Maximum Non-repetitive Surge Current 100 SBR 24 – 26 SBR 0.1 0.01 SBR – 210 220 SBR 0.001 10 SB R 24 1 1.0 SB R 26 10 SB R SB 210 R 21 5 INSTANTANEOUS FORWARD CURRENT, (A) 100 INSTANTANEOUS REVERSE CURRENT, (mA) 5 NUMBER OF CYCLES AT 60Hz SB R 22 0 AVERAGE FORWARD CURRENT AMPERES SBR24 ~ SBR220 0.1 0 20 40 60 80 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE, VOLTS Figure 3. Typical Reverse Characteristics Figure 4. Typical Forward Characteristics 0.9 CAPACITANCE, (pF) 1000 100 TJ = 25ºC f = 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE, VOLTS Figure 5. Typical Junction Capacitance Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 2 SBR24 ~ SBR220 SBR24~SBR220 SMB .155(3.94) .130(3.30) .083(2.11) .077(1.96) .190(4.75) .160(4.06) .012(0.305) .006(0.152) .096(2.44) .084(2.13) .060(1.52) .030(0.76) .008(0.203) .002(0.051) .220(5.59) .205(5.21) K A http:// www.sirectsemi.com 3