E L E C T R O N I C MBR10150C Power Schottky Rectifier - 10Amp 150Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency -ESD performance human body mode > 6 KV TO-220AC L B □ Application M C -AC/DC Switching Adaptor -Switch-Mode Power Supply D K A □ Absolute maximum ratings E Symbol Ratings Unit Conditions IF(AV) 10 A Average Forward Current F O Repetitive Peak Reverse VRRM 150 V IFSM 120 A Peak Forward Surge Current VF(max) 0.69 V Forward Voltage Drop Tj -50 to +175 ºC Operating Temperature Tstg -50 to +150 ºC Storage Temperature H K DIM Maximum Instantaneous Forward Voltage Maximum Reverse Leakage Current Maximum Voltage Rate of Change Typical Thermal Resistance, Junction to Case Symbol Ratings Conditions 0.88V Tc = 25ºC 0.69V Tc = 125ºC 0.01mA Tc = 25ºC 10mA Tc = 125ºC dv/dt 10,000 V/μs Rated VR Rθ (j-c) 2.2 ºC/W Per diode VF IR J Voltage □ Electrical characteristics Parameters G I A B C D E F G H I J K L M N O H N A DIMENSIONS INCHES MM MAX MIN MAX MIN .579 .606 14.70 15.40 .392 .411 9.95 10.45 .104 .116 2.65 2.95 .248 .272 6.30 6.90 .325 .350 8.25 8.90 .126 .157 3.20 4.00 .492 .551 12.50 14.00 .096 .108 2.45 2.75 .028 .039 0.70 1.00 .010 .022 0.25 0.55 .146 .157 3.70 4.00 .167 .187 4.25 4.75 .045 .057 1.15 1.45 .089 .114 2.25 2.90 .047 .055 1.20 1.40 NOTE Note: Pulse Test : 380μs pulse width, 2% duty cycle September 2008 / Rev.6.2 http:// www.sirectsemi.com 1 MBR10150C 5.0 4.5 3.5 δ= 0.5 6 Rth(j-a) = Rth(j-c) δ= 0.05 5 δ= 1 3.0 4 IF(av)(A) PF(av)(W) δ= 0.2 δ= 0.1 4.0 2.5 2.0 3 Rth(j-a) = 15℃/W 1.5 2 1.0 1 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 0 25 50 75 IF(av)(A) 100 125 150 175 Tamb(℃) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ= 0.5, per diode) 80 1.0 70 0.8 IM(A) 50 Tc = 50℃ 40 Tc = 75℃ 30 Zth(j-c)/R th(j-c) 60 20 0.6 0.4 δ= 0.5 δ= 0.2 δ= 0.1 0.2 Tc = 125℃ 10 0 1E-3 1E-2 1E-1 Single pulse 0.0 1E-3 1E+0 1E-2 1E-1 t(s) 1E+0 tp(s) Figure 3. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (per diode) 1E+5 200 F = 1MHz Tj = 25℃ Tj = 175℃ 1E+4 Tj = 150℃ 1E+3 100 1E+2 1E+1 C(pF) IR(μ A) Tj = 125℃ Tj = 75℃ 1E+0 50 20 Tj = 25℃ 1E-1 1E-2 10 0 25 50 75 100 125 150 1 2 VR(V) 5 10 20 50 100 200 VR(V) Figure 5. Reverse leakage current versus reverse voltage applied (ytpical values, per diode) Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode) http:// www.sirectsemi.com 2 MBR10150C 80 100 70 Rth(j-a)( ℃/W) 60 IFM(A) 10 Tj = 125℃ Typical values 1 Tj = 25℃ 50 40 30 20 10 Tj = 125℃ 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 1.2 1.4 1.6 1.8 VFM(V) Figure 7. Forward voltage drop versus forward current (maximum values, per diode) 0 2 4 2.0 6 8 10 12 14 16 18 20 S(cm2) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness : 35μ m) (STPS10150CG only) Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 3