MBR10150C

E
L
E
C
T
R
O
N
I
C
MBR10150C
Power Schottky Rectifier - 10Amp 150Volt
□ Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
-ESD performance human body mode > 6 KV
TO-220AC
L
B
□ Application
M
C
-AC/DC Switching Adaptor
-Switch-Mode Power Supply
D
K
A
□ Absolute maximum ratings
E
Symbol
Ratings
Unit
Conditions
IF(AV)
10
A
Average Forward Current
F
O
Repetitive Peak Reverse
VRRM
150
V
IFSM
120
A
Peak Forward Surge Current
VF(max)
0.69
V
Forward Voltage Drop
Tj
-50 to +175
ºC
Operating Temperature
Tstg
-50 to +150
ºC
Storage Temperature
H
K
DIM
Maximum Instantaneous
Forward Voltage
Maximum Reverse Leakage
Current
Maximum Voltage Rate of
Change
Typical Thermal Resistance,
Junction to Case
Symbol
Ratings
Conditions
0.88V
Tc = 25ºC
0.69V
Tc = 125ºC
0.01mA
Tc = 25ºC
10mA
Tc = 125ºC
dv/dt
10,000 V/μs
Rated VR
Rθ (j-c)
2.2 ºC/W
Per diode
VF
IR
J
Voltage
□ Electrical characteristics
Parameters
G
I
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
H
N
A
DIMENSIONS
INCHES
MM
MAX
MIN
MAX
MIN
.579
.606
14.70 15.40
.392
.411
9.95
10.45
.104
.116
2.65
2.95
.248
.272
6.30
6.90
.325
.350
8.25
8.90
.126
.157
3.20
4.00
.492
.551
12.50 14.00
.096
.108
2.45
2.75
.028
.039
0.70
1.00
.010
.022
0.25
0.55
.146
.157
3.70
4.00
.167
.187
4.25
4.75
.045
.057
1.15
1.45
.089
.114
2.25
2.90
.047
.055
1.20
1.40
NOTE
Note: Pulse Test : 380μs pulse width, 2% duty cycle
September 2008 / Rev.6.2
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1
MBR10150C
5.0
4.5
3.5
δ= 0.5
6
Rth(j-a) = Rth(j-c)
δ= 0.05
5
δ= 1
3.0
4
IF(av)(A)
PF(av)(W)
δ= 0.2
δ= 0.1
4.0
2.5
2.0
3
Rth(j-a) = 15℃/W
1.5
2
1.0
1
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
0
25
50
75
IF(av)(A)
100
125
150
175
Tamb(℃)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
Figure 2. Average forward current versus ambient
temperature (δ= 0.5, per diode)
80
1.0
70
0.8
IM(A)
50
Tc = 50℃
40
Tc = 75℃
30
Zth(j-c)/R th(j-c)
60
20
0.6
0.4
δ= 0.5
δ= 0.2
δ= 0.1
0.2
Tc = 125℃
10
0
1E-3
1E-2
1E-1
Single pulse
0.0
1E-3
1E+0
1E-2
1E-1
t(s)
1E+0
tp(s)
Figure 3. Non repetitive surge peak forward current
versus overload duration (maximum values, per diode)
Figure 4. Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
1E+5
200
F = 1MHz
Tj = 25℃
Tj = 175℃
1E+4
Tj = 150℃
1E+3
100
1E+2
1E+1
C(pF)
IR(μ A)
Tj = 125℃
Tj = 75℃
1E+0
50
20
Tj = 25℃
1E-1
1E-2
10
0
25
50
75
100
125
150
1
2
VR(V)
5
10
20
50
100
200
VR(V)
Figure 5. Reverse leakage current versus reverse
voltage applied (ytpical values, per diode)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values, per diode)
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2
MBR10150C
80
100
70
Rth(j-a)( ℃/W)
60
IFM(A)
10
Tj = 125℃
Typical values
1
Tj = 25℃
50
40
30
20
10
Tj = 125℃
0.1
0.0
0.2
0.4
0.6
0.8
0
1.0
1.2
1.4
1.6
1.8
VFM(V)
Figure 7. Forward voltage drop versus forward
current (maximum values, per diode)
0
2
4
2.0
6
8
10
12
14
16
18
20
S(cm2)
Figure 8. Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
copper thickness : 35μ m) (STPS10150CG only)
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: [email protected]
France: [email protected]
Taiwan: [email protected]
Hong Kong: [email protected]
China: [email protected] …Thailand: [email protected]
Philippines: [email protected] Belize: [email protected]
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3