XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings1 (1) Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 800 mA Gate Bias Voltage (Vg) +0.3 VDC Input Power (RF Pin) TBD Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to MTTF Table1 Channel Temperature (Tch) MTTF Table1 Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Ordering Information Part Number Package XX1001-BD-000V vacuum release gel paks XX1001-BD-EV1 evaluation board 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Rev. V1 Electrical Specifications: 18-21 GHz (fin) (Ambient Temperature T = 25°C) Parameter Units Min. Typ. Max. Output Frequency Range (fout) GHz 36.0 - 42.0 Input Return Loss (S11) dB - TBD - Output Return Loss (S22) dB - 12.0 - Fundamental Rejection dBc - 50.0 - RF Input Power (RF Pin) dBm - 0.0 - Output Power at 0.0 dBm Pin (Pout) dBm - +26.0 - Drain Supply Voltage (Vd1) Doubler V - 2.5 3.0 Drain Supply Voltage (Vd2) Buffer Amplifier V - 3.0 4.0 Drain Supply Voltage (Vd3,4,5,6) Power Amplifier V - 4.5 5.5 Gate Supply Voltage (Vg1) Doubler V - -1.2 - Drain Supply Current (Id1) Doubler mA - <1.0 - Drain Supply Current (Id2) Buffer Amplifier mA - 20 25 Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) Power Amplifier mA - 530 600 Block Diagram & Schematics VG2 VD2 VD VD RFin X2 AMP VG VG1 VD1 VD3 VD AMP VG VD4 VD AMP VG VG3 VD5 VD AMP VG VG4 VD6 VD RFo ut AMP VG VG5 VG VG6 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Rev. V1 Typical Performance Curves 35 30 25 30 20 15 Pout @2 f 25 20 in 15 10 5 10 5 0 -5 0 -5 -10 -15 -20 -10 Pout @f -15 in -20 -25 -25 -30 -30 -35 -35 -40 -40 -45 -45 -50 -50 37 35 37.5 38 38.5 39 39.5 40 P in=+10 dB m -55 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 35 30 8 9 10 37-40 GHz 30 25 25 20 20 15 15 Pin=0 dBm 10 37.0 37.5 38.0 38.5 39.0 39.5 0 40.0 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 2 4 6 8 10 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 0629, RC =R10C12, RF freq (GHz)=37 0629, RC =R10C12, RF freq (GHz)=38 0629, RC =R10C12, RF freq (GHz)=39 0629, RC =R10C12, RF freq (GHz)=40 -55 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Rev. V1 Mechanical Drawing 0.295 (0.012) 0.694 (0.027) 1.095 (0.043) 1.494 (0.059) 2.096 (0.083) 2.705 (0.107) 2 3 4 5 6 7 1.700 (0.067) 0.605 (0.024) 8 1 14 13 12 11 10 9 0.295 (0.012) 0.695 (0.027) 1.095 (0.043) 1.495 (0.059) 2.096 (0.083) 2.503 (0.099) 0.638 (0.025) 0.0 0.0 3.000 (0.118) (Note: Engineering designator is 20DBL0629) Units:millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness:0.110 +/- 0.010 (0.0043 +/- 0.0004),Backside is ground,Bond Pad/Backside Metallization:Gold All DCBond Pads are 0.100 x 0.100 (0.004 x 0.004).All RFBond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance:+/- 0.005 (+/- 0.0002).Approximate weight:3.987 mg. Bond Pad #1 (RFIn) Bond Pad #2 (Vg2) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3) Bond Pad #5 (Vd4) Bond Pad #6 (Vd5) Bond Pad #7 (Vd6) Bond Pad #8 (RFOut) Bond Pad #9 (Vg6) Bond Pad #10 (Vg5) Bond Pad #11 Vg4) Bond Pad #12 (Vg3) Bias Arrangement Bond Pad #13 (Vd1) Bond Pad #14 (Vg1) Bypass Capacitors - See App Note [2] Vd3,4,5 Vd2 Vd6 Vg2 2 RF In 3 4 5 7 6 8 1 14 13 12 11 10 RF Out 9 Vg1 Vg6 Vd1 Vg3,4,5 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Rev. V1 MTTF MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate. XX1001-BD, MTTF (yrs) vs. Backplate Temperature (°C) 1.0E+05 MTTF (Years) 1.0E+04 1.0E+03 1.0E+02 1.0E+01 1.0E+00 55 65 75 85 95 Temperature (°C) 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Rev. V1 App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd6 at Vd1=2.5V, Vd2=3.0V, Vd(3,4,5,6)=4.5V with Id1<1mA, Id2=20mA, Id3=40mA, Id4=70mA, Id5=150mA, Id6=270mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. As shown in the bonding diagram, it is possible to parallel stages Vd(3,4,5) with Id(3,4,5)=260mA while maintaining satisfactory performance. For non-critical applications it is possible to parallel stages Vd(3,4,5,6) together and adjust the common gate voltage Vg(3,4,5,6) for total drain current Id(total)=530mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. Vd(3,4,5,6) or Vg(3,4,5,6) have been tied together but can be left open. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4,5,6 and Vg1,2,3,4,5,6) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Rev. V1 Lead-Free Package Dimensions/Layout Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 2 devices. 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.