TetraFET D1031UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED Dimensions in mm. 2.313 ± 0.2 5.50 ± 0.15 0.3 R. 4 PL. 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 4 5 3 6 2 7 1 8 1.27 3.00 2.07 0.381 2 PL. 2 PL. 0.360 ± 0.005 6.50 ± 0.15 1.27 1.27 0.10 R. TYP. FEATURES 0.47 2 PL. 0.10 TYP. 0.80 4 PL. 0.10 TYP. 0.508 4.90 ± 0.15 • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM Ceramic Material: Alumina. APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 30W 70V ±20V 5A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 7110 Issue 1 D1031UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Drain–Source Typ. Max. Unit VGS = 0 ID = 100mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 μA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 1A GPS Common Source Power Gain PO = 10W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 500MHz BVDSS IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.1A 70 1 V 0.8 S 13 dB 50 % 20:1 — Ciss Input Capacitance VDS = 0V VGS = –5V f = 1MHz 60 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 30 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2.5 pF * Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 6°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 7110 Issue 1 D1031UK 7.00 6.00 Vg=13 V Vg=12 V 5.00 Vg=11 V Vg=10 V Vg=9V 4.00 Vg=8 V IDS (A) Vg=7 V 3.00 Vg=6 V Vg=5 V 2.00 1.00 0.00 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 VDS (V) Figure 1 – Typical IV Characteristics. Capacitance pF 100 10 Output capacitance Input Capacitance Reverse transfer capacitance 1 0 5 10 15 20 25 30 Vds V Figure 2 – Typical CV Characteristics. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 7110 Issue 1