BD2244G-M ,BD2245G-M : Power Management

Datasheet
1 Channel Compact High Side Switch ICs
1ch Adjustable Current Limit
High Side Switch ICs
BD2244G-M BD2245G-M
Key Specifications
General Description





BD2244G-M and BD2245G-M are low on-resistance
N-channel MOSFET high-side power switches,
optimized for Universal Serial Bus (USB) applications.
BD2244G-M and BD2245G-M are equipped with the
function of over-current detection, thermal shutdown,
under-voltage lockout and soft-start. Moreover, the range
of Current limit threshold can be adjusted from 0.2A to
1.7A by changing the external resistance
Input Voltage Range:
2.8V to 5.5V
On Resistance: (IN=5V)
100mΩ(Typ)
Current Limit Threshold: 0.2A to 1.7A adjustable
Standby Current:
0.01μA (Typ)
Operating Temperature Range:
-40°C to +85°C
Package
Features
W(Typ) x D(Typ) x H(Max)
 AEC-Q100 Qualified
 Adjustable Current Limit Threshold: 200mA to 1.7A
 Built-in Low On-Resistance (Typ 100mΩ) N-channel
MOSFET Built-in
 Soft-Start Circuit
 Output Discharge Function
 Open-Drain Fault Flag Output
 Thermal Shutdown
 Under-Voltage Lockout
 Reverse Current Protection when Power Switch Off
 Control Input Logic
 Active-High:
BD2244G-M
 Active-Low:
BD2245G-M
SSOP6
2.90mm x 2.80mm x 1.25mm
Applications
Car accessory
Typical Application Circuit
5V (Typ)
3.3V
CIN
10μF
10kΩ to
100kΩ
1μF
IN
OUT
GND
ILIM
+
RLIM
EN
CL
-
120μF
/OC
Figure 1. Typical Application Circuit
Lineup
Output Load
Current
Max
Adjustable
Current Limit
Threshold
Channel
Control input
logic
1.5A
200mA to 1.7A
1ch
High
SSOP6
Reel of 3000
BD2244G – MGTR
1.5A
200mA to 1.7A
1ch
Low
SSOP6
Reel of 3000
BD2245G – MGTR
〇Product structure : Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
Package
Orderable Part Number
〇This product has no designed protection against radioactive rays
1/25
TSZ02201-0R5R0H300140-1-2
25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Block Diagram
IN
OUT
Reverse current
Protection
/EN
Under-voltage
Lockout
GND
Charge
Pump
EN
Over-current
Protection
ILIM
Thermal
Shutdown
/OC
Delay
Counter
Figure 2. Block Diagram
Pin Configuration
IN
1
6
OUT
GND
2
5
ILIM
EN
3
4
/OC
Figure 3. Pin Configuration (TOP VIEW)
Pin Descriptions
Pin No.
Symbol
I/O
1
IN
I
Switch input and the supply voltage for the IC.
2
GND
-
Ground.
3
EN
I
4
/OC
O
5
ILIM
O
Current limit threshold set Pin. External resistor used to set Current limit
threshold. Recommended 11.97 kΩ ≤ RLIM ≤ 106.3 kΩ
6
OUT
O
Power switch output.
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TSZ22111 • 15 • 001
Function
Enable input.
High-level input turns on the switch (BD2244G-M)
Low-level input turns on the switch (BD2245G-M)
Over-current detection terminal.
Low level output during over-current or over-temperature condition.
Open-drain fault flag output.
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TSZ02201-0R5R0H300140-1-2
25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Unit
VIN
-0.3 to +7.0
V
EN Input Voltage
VEN
-0.3 to +7.0
V
ILIM Voltage
VILIM
-0.3 to +7.0
V
ILIM Source Current
IILIM
1
mA
/OC Voltage
V/OC
-0.3 to +7.0
V
/OC Sink Current
I/OC
10
mA
OUT Voltage
VOUT
-0.3 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°C
IN Supply Voltage
Power Dissipation
Pd
0.67
(Note1)
W
(Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1℃ above 25℃
Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to
predict all destructive situations such as short-circuit modes, open circuit modes, etc. Therefore, it is important to
consider circuit protection measures, like adding a fuse, in case the IC is operated in a special mode exceeding the
absolute maximum ratings.
Recommended Operating Conditions
Parameter
IN Operating Voltage
Operating Temperature
Symbol
Rating
Max
Unit
Min
Typ
VIN
2.8
5.0
5.5
V
TOPR
-40
-
+85
°C
Electrical Characteristics (VIN = 5V, RLIM =20kΩ, Ta = 25°C, unless otherwise specified.)
DC Characteristics
Parameter
Symbol
Limit
Min
Typ
Max
Unit
Conditions
VEN = 5V, VOUT = open, (BD2244G-M)
VEN = 0V, VOUT = open, (BD2245G-M)
VEN = 0V, VOUT = open, (BD2244G-M)
VEN = 5V, VOUT = open, (BD2245G-M)
Operating Current
IDD
-
120
168
μA
Standby Current
ISTB
-
0.01
5
μA
VENH
2.0
-
-
V
High input
EN Input Voltage
VENL
-
-
0.8
V
Low input
EN Input Leakage
IEN
-1
0.01
1
μA
VEN = 0V or 5V
On-Resistance
RON
-
100
130
mΩ
IOUT = 500mA
Reverse Leak Current
IREV
μA
VOUT = 5V, VIN = 0V
Current Limit Threshold
Output Discharge Resistance
/OC Output Low Voltage
UVLO Threshold
-
-
1
112
212
313
RLIM = 100kΩ
911
1028
1145
1566
1696
1826
RDISC
30
60
120
Ω
IOUT = -1mA, VEN = 0V (BD2244G-M)
IOUT = -1mA, VEN = 5V (BD2245G-M)
ITH
mA
RLIM = 20kΩ
RLIM = 12kΩ
V/OC
-
-
0.4
V
I/OC = -1mA
VTUVH
2.35
2.55
2.75
V
VIN increasing
VTUVL
2.30
2.50
2.70
V
VIN decreasing
AC Characteristics
Parameter
Symbol
Limits
Min
Typ
Max
Unit
Output Rise Time
tON1
-
0.6
6
ms
Output Turn-On Time
tON2
-
1
10
ms
Output Fall Time
tOFF1
-
1.8
20
μs
Output Turn-Off Time
tOFF2
-
3.2
40
μs
/OC Delay Time
t/OC
4
7
12
ms
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TSZ22111 • 15 • 001
3/25
Conditions
RL = 100Ω
TSZ02201-0R5R0H300140-1-2
25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Measurement Circuit
VIN
VIN
IIN A
CIN= IN
1µF
GND
VEN
OUT
EN
ILIM
CIN= IN
1µF
GND
RLIM
OUT
RL
ILIM
RLIM
VEN
/OC
A. Operating Current, Standby Current
/OC
EN
B. EN Input Voltage, Output Rise/Fall Time
Output Turn-On/ Turn-Off Time
VIN
VIN
I/OC=
1mA
10kΩ
A
IIN
CIN= IN
1µF
GND
100µF
※
IOUT
OUT
IOUT
CIN= IN
1µF
GND
CL=
100µF
ILIM
OUT
CL=
100µF
ILIM
RLIM
VEN
EN
RLIM
VEN
/OC
C. On-Resistance, Current Limit Threshold, /OC Delay Time
/OC
EN
D. /OC Output Low Voltage
※Use capacitance more than 100μF at output short circuit test by using
external power supply.
VIN
CIN= IN
1µF
GND
VIN
OUT
IOUT=
1mA
CIN= IN
1µF
GND
RL
ILIM
OUT
ILIM
RLIM
VEN
EN
RLIM
VEN
/OC
E. UVLO Threshold
F. Output Discharge Resistance
Figure 4. Measurement Circuit
Timing Diagram
VEN
VENL
VENH
VEN
tON2
10%
90%
tOFF1
90%
10%
10%
tON1
tOFF1
Figure 6. Output Rise/Fall Time
(BD2245G-M)
Figure 5. Output Rise/Fall Time
(BD2244G-M)
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TSZ22111 • 15 • 001
tOFF2
90%
VOUT
10%
tON1
VENH
VENL
tON2
tOFF2
90%
VOUT
/OC
EN
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves
160
160
VIN=5.0V
RLIM=20kΩ
Operationg Current : I DD [μA]
Operating Current : I DD [μA]
Ta=25°C
RLIM=20kΩ
120
80
40
0
120
80
40
0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
100
Figure 8. Operating Current vs Ambient Temperature
(EN Enable)
Figure 7. Operating Current vs Supply Voltage
(EN Enable)
1.0
1.0
Ta=25°C
RLIM=20kΩ
VIN=5.0V
RLIM=20kΩ
0.8
Standby Current : ISTB[μA]
0.8
Standby Current : ISTB[μA]
0
50
Ambient Temperature : Ta[°C]
0.6
0.4
0.2
0.6
0.4
0.2
0.0
0.0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 9. Standby Current vs Supply Voltage
(EN Disable)
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TSZ22111 • 15 • 001
0
50
Ambient Temperature : Ta[°C]
100
Figure 10. Standby Current vs Ambient Temperature
(EN Disable)
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
2.0
2.0
Ta=25°C
RLIM=20kΩ
VIN=5.0V
RLIM=20kΩ
EN[V]
1.5
Low to High
Enable Input Voltage : V
Enable Input Voltage : V
EN[V]
Low to High
High to Low
1.0
0.5
0.0
1.5
High to Low
1.0
0.5
0.0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 11. EN Input Voltage vs
Supply Voltage
100
Figure 12. EN Input Voltage vs
Ambient Temperature
200
200
Ta=25°C
RLIM=20kΩ
IOUT=500mA
VIN=5.0V
RLIM=20kΩ
IOUT=500mA
150
On Resistance : R ON[mΩ ]
On Resistance : R ON[mΩ]
0
50
Ambient Temperature : Ta[°C]
100
50
0
150
100
50
0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 13. On-Resistance vs Supply Voltage
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TSZ22111 • 15 • 001
0
50
Ambient Temperature : Ta[°C]
100
Figure 14. On-Resistance vs Ambient Temperature
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
0.5
0.5
VIN=5.0V
RLIM=100kΩ
0.4
Over Current Threshold : I TH [A]
Over Current Threshold : I TH [A]
Ta=25°C
RLIM=100kΩ
0.3
0.2
0.1
0.4
0.3
0.2
0.1
0.0
0.0
2
3
4
5
Supply Voltage : VIN[V]
-50
6
Figure 15. Over-Current Threshold 1 vs
Supply Voltage
100
Figure 16. Over-Current Threshold 1 vs
Ambient Temperature
1.3
1.3
Ta=25°C
RLIM=20kΩ
VIN=5.0V
RLIM=20kΩ
1.2
Over Current Threshold : I TH [A]
Over Current Threshold : I TH [A]
0
50
Ambient Temperature : Ta[°C]
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 17. Over-Current Threshold 2 vs
Supply Voltage
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TSZ22111 • 15 • 001
0
50
Ambient Temperature : Ta[°C]
100
Figure 18. Over-Current Threshold 2 vs
Ambient Temperature
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
2.0
2.0
VIN=5.0V
RLIM=12kΩ
1.9
Over Current Threshold : I TH [A]
Over Current Threshold : I TH [A]
Ta=25°C
RLIM=12kΩ
1.8
1.7
1.6
1.9
1.8
1.7
1.6
1.5
1.5
2
3
4
5
Supply Voltage : VIN[V]
-50
6
0
50
Ambient Temperature : Ta[°C]
Figure 19. Over-Current Threshold 3 vs
Supply Voltage
Figure 20. Over-Current Threshold 3 vs
Ambient Temperature
100
100
Ta=25°C
RLIM=20kΩ
I/OC=1mA
/OC Output Low Voltage : V/OC [mV]
/OC Output Low Voltage : V/OC [mV]
100
80
60
40
20
0
VIN=5.0V
RLIM=20kΩ
I/OC=1mA
80
60
40
20
0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 21. /OC Output Low Voltage vs
Supply Voltage
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
0
50
Ambient Temperature : Ta[°C]
100
Figure 22. /OC Output Low Voltage vs
Ambient Temperature
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
1.0
2.7
RLIM=20kΩ
UVLO Hysteresis Voltage:V HSY [V]
UVLO Threshold : V TUVH , VTUVL [V]
RLIM=20kΩ
2.6
VTUVH
2.5
VTUVL
2.4
2.3
2.2
0.8
0.6
0.4
0.2
0.0
-50
0
50
Ambient Temperature : Ta[℃]
100
-50
Figure 23. UVLO Threshold vs
Ambient Temperature
100
Figure 24. UVLO Hysteresis Voltage vs
Ambient Temperature
3.0
3.0
Ta=25°C
RLIM=20kΩ
RL=100Ω
2.5
Output Rise Time : t ON1 [ms]
2.5
Output Rise Time : t ON1 [ms]
0
50
Ambient Temperature : Ta[°C]
2.0
1.5
1.0
0.5
VIN=5.0V
RLIM=20kΩ
RL=100Ω
2.0
1.5
1.0
0.5
0.0
0.0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 25. Output Rise Time vs
Supply Voltage
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TSZ22111 • 15 • 001
0
50
Ambient Temperature : Ta[°C]
100
Figure 26. Output Rise Time vs
Ambient Temperature
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
3.0
3.0
Ta=25°C
RLIM=20kΩ
RL=100Ω
2.5
Output Turn On Time : t ON2 [ms]
Output Turn On Time : t ON2 [ms]
2.5
2.0
1.5
1.0
0.5
0.0
VIN=5.0V
RLIM=20kΩ
RL=100Ω
2.0
1.5
1.0
0.5
0.0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
Figure 27. Output Turn-On Time vs
Supply Voltage
100
Figure 28. Output Turn-On Time vs
Ambient Temperature
5.0
5.0
Ta=25°C
RLIM=20kΩ
RL=100Ω
VIN=5.0V
RLIM=20kΩ
RL=100Ω
4.0
4.0
Output Fall Time : t OFF1 [μs]
Output Fall Time : t OFF1 [μs]
0
50
Ambient Temperature : Ta[°C]
3.0
2.0
1.0
0.0
3.0
2.0
1.0
0.0
2
3
4
5
Supply Voltage : VIN[V]
6
Figure 29. Output Fall Time vs
Supply Voltage
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TSZ22111 • 15 • 001
-50
0
50
Ambient Temperature : Ta[°C]
100
Figure 30. Output Fall Time vs
Ambient Temperature
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TSZ02201-0R5R0H300140-1-2
25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
6.0
Ta=25°C
RLIM=20kΩ
RL=100Ω
5.0
Output Turn Off Time : t OFF2 [μs]
Output Turn Off Time : t OFF2 [μs]
6.0
4.0
3.0
2.0
1.0
0.0
5.0
VIN=5.0V
RLIM=20kΩ
RL=100Ω
4.0
3.0
2.0
1.0
0.0
2
3
4
5
Supply Voltage : VIN[V]
6
-50
100
Figure 32. Output Turn-Off Time vs
Ambient Temperature
Figure 31. Output Turn-Off Time vs
Supply Voltage
10
10
Ta=25°C
RLIM=20kΩ
VIN=5.0V
RLIM=20kΩ
8
/OC Delay Time : t /OC [ms]
8
/OC Delay Time : t /OC [ms]
0
50
Ambient Temperature : Ta[°C]
6
4
2
0
6
4
2
0
2
3
4
5
Supply Voltage : VIN[V]
6
0
50
Ambient Temperature : Ta[°C]
100
Figure 34. /OC Delay Time vs
Ambient Temperature
Figure 33. /OC Delay Time vs
Supply Voltage
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TSZ22111 • 15 • 001
-50
11/25
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Performance Curves - continued
200
200
Ta=25°C
RLIM=20kΩ
IOUT=1mA
DISC [Ω]
150
Disc On Resistance : R
Dsic On Resistance : R
DISC [Ω
]
VIN=5.0V
RLIM=20kΩ
IOUT=1mA
100
50
0
150
100
50
0
2
3
4
5
Supply Voltage : VIN[V]
6
Figure 35. Discharge On Resistance
vs Supply Voltage
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
-50
0
50
Ambient Temperature : Ta[°C]
100
Figure 36. Discharge On Resistance vs
Ambient Temperature
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Wave Forms
VEN
(5V/div.)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
IIN
(50mA/div.)
IIN
(50mA/div.)
VIN=5V
RLIM=20kΩ
RL=100Ω
TIME (0.5ms/div.)
Figure 37. Output Rise Characteristic
(BD2244G-M)
VIN=5V
RLIM=20kΩ
RL=100Ω
TIME (1μs/div.)
Figure 38. Output Fall Characteristic
(BD2244G-M)
VEN
(5V/div.)
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
CL=47μF
CL=100μF
Limit current
Current limit threshold
VOUT
(5V/div.)
CL=220μF
VIN=5V
RLIM=20kΩ
RL=100Ω
IIN
(0.5A/div.)
CL=47μF
IIN
(0.5A/div.)
CL=100μF
TIME (1ms/div.)
Figure 39. Inrush Current Response
(BD2244G-M)
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TSZ22111 • 15 • 001
VIN=5V
RLIM=20kΩ
CL=100μF
TIME (20ms/div.)
Figure 40. Over Current Response
Ramped Load
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25. Aug.2014 Rev.001
BD2244G-M BD2245G-M
Typical Wave Forms - continued
VEN
(5V/div.)
VEN
(5V/div.)
VIN=5V
RLIM=20kΩ
CL=100μF
V/OC
(5V/div.)
V/OC
(5V/div.)
TSD detection
Removal of load
TSD detection
TSD recovery
VOUT
(5V/div.)
VOUT
(5V/div.)
IIN
(0.5A/div.)
TSD recovery
VIN=5V
RLIM=20kΩ
CL=100μF
IIN
(0.5A/div.)
TIME (20ms/div.)
Figure 42. Over Current Response
Disenable From Short Circuit
(BD2244G-M)
TIME (20ms/div.)
Figure 41. Over Current Response
Enable Into Short Circuit
(BD2244G-M)
VIN
(5V/div.)
VIN
(5V/div.)
VIN=VEN
V/OC
(5V/div.)
VIN=VEN
V/OC
(5V/div.)
UVLO detection
UVLO recovery
VOUT
(5V/div.)
VOUT
(5V/div.)
IIN
(50mA/div.)
IIN
(50mA/div.)
V/OC=3.3V
RLIM=20kΩ
RL=100Ω
TIME (1s/div.)
Figure 43. UVLO Response
Increasing VIN (BD2244G-M)
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TSZ22111 • 15 • 001
V/OC=3.3V
RLIM=20kΩ
RL=100Ω
TIME (1s/div.)
Figure 44. UVLO Response
Decreasing VIN (BD2244G-M)
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BD2244G-M BD2245G-M
Typical Wave Forms - continued
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
VIN=5V
RLIM=20kΩ
CL=100μF
VIN=5V
RLIM=20kΩ
CL=100μF
IIN
(1A/div.)
IIN
(1A/div.)
TIME (2ms/div.)
Figure 45. Over Current Response
1Ω Load Connected At Enable
TIME (5μs/div.)
Figure 46. Over Current Response
1Ω Load Connected At Enable
V/OC
(5V/div.)
V/OC
(5V/div.)
VOUT
(5V/div.)
VOUT
(5V/div.)
VIN=5V
RLIM=20kΩ
CL=100μF
VIN=5V
RLIM=20kΩ
CL=100μF
IIN
(1A/div.)
IIN
(1A/div.)
TIME (2ms/div.)
Figure 47. Over Current Response
0Ω Load Connected At Enable
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TIME (5μs/div.)
Figure 48. Over Current Response
0Ω Load Connected At Enable
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Application Circuit Example
5V (Typ)
10kΩ to
100kΩ
CIN
Controller
IN
OUT
GND
ILIM
+
RLIM
EN
CL
-
/OC
Figure 49. Application Circuit Example
Application Information
When excessive current flows due to output short-circuit or so, ringing occurs by inductance of power source line and IC.
This may cause bad effects on IC operations. In order to avoid this case, a bypass capacitor (CIN) should be connected
across the IN terminal and GND terminal of IC. A 1μF or higher value is recommended. Moreover, in order to decrease
voltage fluctuations of power source line and IC, connect a low ESR capacitor in parallel with CIN. A 10μF to 100μF or higher
is effective.
Pull up /OC output by resistance 10kΩ to 100kΩ.
Set up values for CL which satisfies the application.
This application circuit does not guarantee its operation.
When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external
components including AC/DC characteristics as well as the dispersion of the IC.
Functional Description
1. Switch Operation
IN terminal and OUT terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal
is also used as power source input to internal control circuit.
When the switch is turned on from EN control input, the IN and OUT terminals are connected by a 100mΩ(Typ) switch. In
ON status, the switch is bidirectional. Therefore, when the potential of OUT terminal is higher than that of the IN terminal,
current flows from OUT terminal to IN terminal.
Since a parasitic diode between the drain and the source of switch MOSFET is canceled, current flow from OUT to IN is
prevented during off state.
2. Thermal Shutdown Circuit (TSD)
If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature goes
beyond 120℃(Typ) in the condition of over-current detection, thermal shutdown circuit operates and turns power switch
off, causing the IC to output a fault flag (/OC). Then, when the junction temperature decreases lower than 110℃(Typ), the
power switch is turned on and fault flag (/OC) is cancelled. Also, regardless of over-current condition, if the junction
temperature were beyond 160℃(Typ), thermal shutdown circuit makes power switch turn off and outputs fault flag (/OC).
When junction temperature decreases lower than 140℃(Typ), power switch is turned on and fault flag (/OC) is cancelled.
This operation repeats, unless the increase of chip’s temperature is removed or the output of power switch is turned OFF.
Fault flag (/OC) is output without delay time at thermal shutdown.
The thermal shutdown circuit operates when the switch is ON (EN signal is active).
3. Over-Current Detection (OCD)
The over-current detection circuit limits current (ISC) and outputs error flag (/OC) when current flowing in each switch
MOSFET exceeds a specified value. The over-current detection circuit works when the switch is on (EN signal is active).
There are three types of response against over-current.
(1) When the switch is turned on while the output is in short circuit status, the switch gets into current limit status
immediately. (See figure 41)
(2) When the output short-circuits or high capacity load is connected while the switch is on, very large current flows
until the over-current limit circuit reacts. When the current detection and limit circuit operates, current limitation is
carried out. (See figure 45)
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(3) When the output current increases gradually, current limitation would not operate unless the output current
exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried out.
(See Figure 40)
4. Under-Voltage Lockout (UVLO)
UVLO circuit prevents the switch from turning on until the VIN exceeds 2.55V(Typ). If the VIN drops below 2.5V(Typ)
while the switch turns on, then UVLO shuts off the power switch. UVLO has hysteresis of 50mV(Typ).
Under-voltage lockout circuit operates when the switch is on (EN signal is active). (see Figure 43, 44)
5. Fault Flag (/OC) Output
Fault flag output is an N-MOS open drain output. At detection of over-current or thermal shutdown, output is low-level.
Over-current detection has delay filter. This delay filter prevents instantaneous current detection such as inrush current
at switch on, hot plug from being informed to outside, but if charge up time for output capacitance is longer than delay
time, fault flag output asserts low level. When output current is close to Current Limit Threshold value, fault flag output
(/OC) might be low level before turning to over-current condition because it is affected by current swinging or noise. If
fault flag output is unused, /OC pin should be connected to open or ground line.
Over-Current
Detection
Over-Current
Load Removed
VOUT
ITH
Limit current
IOUT
T/OC
V/OC
Figure 50. Over-Current Detection
VEN
VOUT
Over-current detection
Thermal Shutdown
IOUT
V/OC
Thermal Shutdown recover
/OC delay time
Figure 51. Over-Current Detection, Thermal Shutdown Timing (BD2244G-M)
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VEN
Over-current detection
VOUT
Thermal Shutdown
IOUT
Thermal Shutdown recover
V/OC
/OC delay time
Figure 52. Over-Current Detection, Thermal Shutdown Timing (BD2245G-M)
6. Adjustable Current Limit Threshold
BD2244/45G-M is able to change over-current detection value from 200mA to 1.7A by connecting resistance (RLIM)
between ILIM pin and GND pin. The resistance value from 11.97KΩ to 106.3kΩ is recommended for RLIM. The
relational expression and the table for resistance value and over-current detection value are described below. Allocate
RLIM close to IC as possible. Be careful not to be affected by parasitic resistance of board pattern because over-current
detection value is depended on the resistance value between ILIM pin and GND pin. ILIM pin cannot be used as open
and short to GND pin. The RLIM resistance tolerance directly affects the current limit threshold accuracy.
Recommended to use low tolerance resistance.
Over Current Threshold Equation,
Ith(Typ)[mA] = 19364 × RLIM[kΩ]
-0.98
Ith(Min)[mA] = Ith(Typ)[mA] × 0.98 - 96
Ith(Max)[mA] = Ith(Typ)[mA] × 1.02 + 96
2000
Current Limit Threshold : Ith [mA]
1800
Typ.
Min.
Max.
1600
1400
1200
1000
800
600
400
200
0
0
20
40
60
80
100
120
Current Limit Resistor : R LIM [k Ω ]
Figure 53. Ith vs. RLIM graph
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RLIM (kΩ)
106.30
70.28
52.40
41.73
34.65
29.60
25.83
22.91
20.57
18.67
17.08
15.74
14.59
13.60
12.73
11.97
MIN
100
198
296
394
492
590
688
786
884
982
1080
1178
1276
1374
1472
1570
Current Limit Threshold (mA)
TYP
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
MAX
300
402
504
606
708
810
912
1014
1116
1218
1320
1422
1524
1626
1728
1830
Table 1. Ith Tolerance vs. RLIM
7. Output Discharge Function
When the switch is turned off from disable control input or UVLO function, the 60Ω(Typ) discharge circuit between OUT
and GND turns on. By turning on this switch, electric charge at capacitive load is discharged. But when the voltage of
IN declines extremely, then the OUT pin becomes Hi-Z without UVLO function.
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Power Dissipation
(SSOP6 package)
POWER DISSIPATION : Pd [mW]
700
600
500
400
300
200
100
0
0
25
50
75 85 100
AMBIENT TEMPERATURE : Ta [℃]
125
150
* 70mm x 70mm x 1.6mm Glass Epoxy Board
Figure 54. Power Dissipation Curve (Pd-Ta Curve)
I/O Equivalence Circuit
Symbol
Pin No.
EN
3
Equivalent Circuit
EN
/OC
/OC
4
ILIM
5
ILIM
OUT
6
OUT
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 55. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
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BD2244G-M BD2245G-M
Ordering Information
B
D
2
2
4
4
Part Number
B
G
-
MGTR
Package
G: SSOP6
D
2
2
4
5
Part Number
G
Product Rank
M: for Automotive
-
Packaging and forming specification
G: Halogen free
TR: Embossed tape and reel
MGTR
Package
G: SSOP6
Product Rank
M: for Automotive
Packaging and forming specification
G: Halogen free
TR: Embossed tape and reel
Marking Diagram
SSOP6 (TOP VIEW)
1
2
Part Number Marking
1PIN MARK
LOT Number
Part Number
Part Number Marking
BD2244G-M
BL
BD2245G-M
BM
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Physical Dimension, Tape and Reel Information
Package Name
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BD2244G-M BD2245G-M
Revision History
Date
25.Aug.2014
Revision
001
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – SS
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – SS
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
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