HVC133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0170-0100Z Rev.1.00 Jan.21.2004 Features • An optimal solution for antenna switching in mobile phones. • Low capacitance.(C1 = 1.0 pF max) • Low forward resistance. (rf = 0.7 Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC133A T9 UFP Pin Arrangement Cathode mark Mark 1 T9 2 1. Cathode 2. Anode Rev.1.00, Jan.21.2004, page 1 of 4 HVC133A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 30 V Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 30 — — V IR = 1 µA Reverse current IR — — 100 nA VR = 25 V Forward voltage VF — — 0.85 V IF = 2 mA Capacitance C1 — — 1.00 pF VR = 1 V, f = 1 MHz C6 — — 0.90 rf — 0.55 0.70 Forward resistance Rev.1.00, Jan.21.2004, page 2 of 4 VR = 6 V, f = 1 MHz Ω IF = 2 mA, f = 100 MHz HVC133A Main Characteristic 10–2 10–10 Reverse current IR (A) Forward current IF (A) 10–4 10–6 10–8 Ta= 75°C 10 Ta= 50°C –10 Ta= 75°C 10–11 Ta= 50°C 10–12 Ta= 25°C 10–13 Ta= 25°C 10–12 0 0.2 0.4 0.6 0.8 10–14 1.0 0 Forward voltage VF (V) 5 10 15 20 25 Reverse voltage VR (V) 30 Fig.2 Reverse current vs. Reverse voltage Fig.1 Forward current vs. Forward voltage f = 1MHz f = 100MHz Forward resistance rf (Ω) Capacitance C (pF) 10 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.1.00, Jan.21.2004, page 3 of 4 10 1.0 0.1 0.1 1.0 10 Forward current IF (mA) Fig.4 Forward resistance vs. Forward current HVC133A Package Dimensions As of January, 2003 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10 Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Jan.21.2004, page 4 of 4 UFP — Conforms 0.0016 g Sales Strategic Planning Div. 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