2SC5852 Silicon NPN Epitaxial Planar REJ03G0762-0100 (Previous ADE-208-1481) Rev.1.00 Aug.10.2005 Features VHF amplifier, local oscillator Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 *CMPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC* Junction temperature Tj Storage temperature Tstg *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Rev.1.00 Aug 10, 2005 page 1 of 5 Ratings 30 20 4 20 150 150 –55 to +150 Unit V V V mA mW °C °C 2SC5852 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICEO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Notes: 1. The 2SC5852 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 Rev.1.00 Aug 10, 2005 page 2 of 5 Min 30 20 4 60 Typ 0.17 0.72 940 0.9 Max 0.5 0.5 200 Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 10 V, RBE = ∞ VEB = 2 V, IC =0 VCE = 6 V, IC = 1 mA IC = 20 mA, IB = 4 mA VCE = 6 V, IC = 1 mA VCE = 6V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz 2SC5852 Maximum Collector Dissipation Curve IC (mA) 150 Typical Output Characteristics 100 Collector Current Collector Power Dissipation PC * (mW) Main Characteristics 50 20 30 16 50 100 Ambient Temperature 12 75 8 50 4 25 µA 0 4 Ta (°C) 8 12 16 20 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 120 hFE 50 40 4 100 DC Current Transfer Ratio IC (mA) mW IB = 0 150 5 Collector Current P C= 15 0 100 Typical Output Characteristics 30 3 2 20 10 µA 1 IB = 0 0 4 8 12 Collector to Emitter Voltage 16 VCE = 6 V Pulse test 80 60 40 20 0 0.1 20 VCE (V) 0.2 0.5 1.0 2 Collector Current Typical Transfer Characteristics (1) 5 10 20 IC (mA) Typical Transfer Characteristics (2) 5 20 IC (mA) VCE = 6 V Pulse test 16 12 Collector Current IC (mA) 275 250 225 200 175 150 125 * Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) 0 Collector Current 0 8 4 0 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) Rev.1.00 Aug 10, 2005 page 3 of 5 VCE = 6 V 4 3 2 1 0 0.6 0.7 Base to Emitter Voltage 0.8 VBE (V) 2SC5852 Gain Bandwidth Product vs. Collector Current 1.3 fT (MHz) 1.5 f = 1 MHz IE = 0 Gain Bandwidth Product Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1.1 0.9 0.7 0.5 0.3 1.0 3 10 30 Collector to Base Voltage VCB (V) Rev.1.00 Aug 10, 2005 page 4 of 5 1,000 VCE = 6 V 800 600 400 200 0 0.1 0.2 0.5 1.0 2 Collector Current 5 10 IC (mA) 20 2SC5852 Package Dimensions JEITA Package Code RENESAS Code SC-70 Package Name PTSP0003ZA-A D MASS[Typ.] CMPAK / CMPAKV 0.006g A e Q c E HE LP L A A x M L1 S A3 Reference Symbol b A e A2 A A1 S e1 b b1 HE L L1 LP x b2 e1 l1 c1 c b2 A-A Section A A1 A2 A3 b b1 c c1 D E e Pattern of terminal position areas l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.3 0.13 0.11 2.0 1.25 0.65 2.1 Max 1.1 0.1 1.0 0.4 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.45 1.5 0.9 0.2 Ordering Information Part Name 2SC5852QBTL-E 2SC5852QCTL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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