BC857BS - NXP Semiconductors

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
Product data sheet
Supersedes data of 1997 Jul 09
1999 Apr 26
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
FEATURES
BC857BS
PINNING
• Low collector capacitance
PIN
• Low collector-emitter saturation voltage
1, 4
emitter
TR1; TR2
• Closely matched current gain
2, 5
base
TR1; TR2
• Reduces number of components and boardspace
6, 3
collector
TR1; TR2
DESCRIPTION
• No mutual interference between the transistors.
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage
6
6
5
5
4
4
TR2
DESCRIPTION
TR1
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
1
2
Top view
3
1
2
3
MAM339
MARKING
TYPE NUMBER
Fig.1
MARKING CODE
BC857BS
3Ft
Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 26
2
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
416
K/W
Per device
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = −30 V
−
−
−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
−5
μA
nA
Per transistor
ICBO
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
hFE
DC current gain
IC = −2 mA; VCE = −5 V
200
−
450
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
−
−100
mV
IC = −100 mA; IB = −5 mA; note 1
−
−
−400
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−
−755
−
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = −5 V
−600
−655
−750
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
2.2
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
10
−
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
−
MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 26
3
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BS
MBH727
400
handbook, full pagewidth
hFE
VCE = −5 V
300
200
100
0
−10−2
−10−1
−1
−10
Fig.2 DC current gain; typical values
1999 Apr 26
4
−102
IC (mA)
−103
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BS
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1999 Apr 26
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC857BS
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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published in this document, including without limitation
specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 26
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
115002/00/02/pp7
Date of release: 1999 Apr 26
Document order number: 9397 750 05804