PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 3 — 14 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ET. 1.2 Features and benefits Reduces pick and place costs ±10 % resistor ratio tolerance AEC-Q101 qualified 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count 1.3 Applications Digital application in automotive and industrial segments Control of IC inputs Cost-saving alternative for BC807 series in digital applications Switching loads 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −50 V IO output current - - −500 mA R1 bias resistor 1 (input) 0.7 1.0 1.3 kΩ R2/R1 bias resistor ratio 0.9 1.0 1.1 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 2. Pinning information Table 2. Pinning Pin Description 1 input (base) 2 GND (emitter) 3 Simplified outline Graphic symbol 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym003 3. Ordering information Table 3. Ordering information Type number PDTB113ET Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PDTB113ET *7U [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −50 V VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −10 V VI input voltage positive - +10 V negative - −10 V output current - −500 mA IO PDTB113ET Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tamb ≤ 25 °C - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Symbol Rth(j-a) [1] Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient [1] Min Typ Max Unit - - 500 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. PDTB113ET Product data sheet Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −40 V; IE = 0 A - - −100 nA VCB = −50 V; IE = 0 A - - −100 nA ICEO collector-emitter cut-off current VCE = −50 V; IB = 0 A - - −0.5 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −4.0 mA hFE DC current gain VCE = −5 V; IC = −50 mA 33 - - VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −2.5 mA - - −0.3 V VI(off) off-state input voltage VCE = −5 V; IC = −100 μA −0.6 −1.1 −1.5 V VI(on) on-state input voltage VCE = −0.3 V; IC = −20 mA −1.0 −1.4 −1.8 V R1 bias resistor 1 (input) 0.7 1.0 1.3 kΩ R2/R1 bias resistor ratio Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 100 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 0.9 1.0 1.1 - 11 - pF © NXP B.V. 2010. All rights reserved. 3 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 006aaa345 103 006aaa346 −10−1 (1) (1) hFE (2) (2) (3) 102 VCEsat (V) (3) 10 1 10−1 −10−1 −1 −10 −102 IC (mA) −103 −10−2 −10 VCE = −5 V −102 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C DC current gain as a function of collector current; typical values 006aaa347 −10 VI(on) (V) Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa348 −10 VI(off) (V) (1) (2) (1) (2) (3) (3) −1 −1 −10−1 −10−1 −1 −10 −102 IC (mA) −103 −10−1 −10−1 VCE = −0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C On-state input voltage as a function of collector current; typical values PDTB113ET Product data sheet −1 IC (mA) −10 VCE = −5 V (1) Tamb = −40 °C Fig 3. −103 IC/IB = 20 (2) Tamb = 25 °C Fig 1. IC (mA) Fig 4. Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 4 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 5. 0.15 0.09 04-11-04 Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PDTB113ET [1] PDTB113ET Product data sheet Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 5 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 Fig 6. sot023_fr Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 Fig 7. PDTB113ET Product data sheet sot023_fw Wave soldering footprint SOT23 (TO-236AB) All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 6 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTB113ET v.3 20100914 Product data sheet - PDTB113E_SER_2 Modifications: • • • • • Type numbers PDTB113EK and PDTB113ES deleted. Table 7 “Characteristics”: unit for VCEsat changed from mV to V. Section 8 “Test information”: added. Section 11 “Soldering”: added. Section 13 “Legal information”: updated. PDTB113E_SER_2 20091116 Product data sheet - PDTB113E_SER_1 PDTB113E_SER_1 20050427 Product data sheet - - PDTB113ET Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 7 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. PDTB113ET Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 8 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PDTB113ET Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 September 2010 © NXP B.V. 2010. All rights reserved. 9 of 10 PDTB113ET NXP Semiconductors PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Quality information . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 Packing information . . . . . . . . . . . . . . . . . . . . . 5 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 September 2010 Document identifier: PDTB113ET