BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Surface-mountable package High voltage capability Very low switching and conduction losses Integrated anti-parallel E-C diode 1.3 Applications DC-to-DC converters Inverters Electronic lighting ballasts Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; DC; see Figure 4 - - 4 A Ptot total power dissipation see Figure 3; Tmb ≤ 25 °C - - 80 W VCESM collector-emitter peak voltage VBE = 0 V - - 850 V IC = 500 mA; VCE = 5 V; see Figure 12; Tmb = 25 °C 13 21 32 VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 12 - 12.5 - IB = 0 A; LC = 25 mH; IC = 10 mA; see Figure 7; see Figure 8 400 450 Static characteristics hFE VCEOsus DC current gain collector-emitter sustaining voltage - V BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector[1] Simplified outline Graphic symbol mb 3 E emitter mb C mounting base; connected to collector C B E 2 1 sym131 3 SOT428 (DPAK) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 3. Ordering information Table 3. Ordering information Type number Package BUJD203AD Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 850 V VCBO collector-base voltage IE = 0 A - 850 V VCEO collector-emitter voltage IB = 0 A - 425 V IC collector current DC; see Figure 1; see Figure 2; see Figure 4 - 4 A ICM peak collector current see Figure 1; see Figure 2; see Figure 4 - 8 A IB base current DC - 2 A IBM peak base current - 4 A Ptot total power dissipation - 80 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C BUJD203AD Product data sheet Tmb ≤ 25 °C; see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 001aac000 10 VCC IC (A) LC VCL(CE) probe point 8 LB IBon VBB 6 DUT 001aab999 4 2 0 0 Fig 1. 200 400 600 800 1000 VCEclamp (V) Reverse bias safe operating area Fig 2. Test circuit for reverse bias safe operating area 001aab993 120 Pder (%) 80 40 0 0 40 80 120 160 Tmb (°C) Fig 3. Normalized total power dissipation as a function of mounting base temperature BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 001aac001 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) II(3) (1) 1 (2) 10−1 tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC I(3) 10−2 III(3) 10−3 102 10 1 103 VCEclamp (V) 1)Ptot maximum and Ptot peak maximum lines 2)Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 6 - - 1.56 K/W Rth(j-a) thermal resistance from junction to ambient printed-circuit-board mounted; minimum footprint; see Figure 5 - 75 - K/W 7.0 7.0 1.5 2.15 2.5 4.57 001aab021 Fig 5. Minimum footprint SOT428 001aab998 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 10−1 δ= Ptot tp T 0.01 t tp T 10−2 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit Static characteristics ICES ICBO collector-emitter cut-off current collector-base cut-off current VBE = 0 V; VCE = 850 V; Tj = 125 °C [1] - - 2 mA VBE = 0 V; VCE = 850 V; Tj = 25 °C [1] - - 1 mA VCB = 850 V; IE = 0 A [1] - - 1 mA [1] - - 0.1 mA ICEO collector-emitter cut-off current VCE = 425 V; IB = 0 A IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 10 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 7; see Figure 8 400 450 - V VCEsat collector-emitter saturation voltage IC = 3 A; IB = 0.6 A; see Figure 9; see Figure 10 - 0.29 1 V VBEsat base-emitter saturation voltage IC = 3 A; IB = 0.6 A; see Figure 11 - 0.99 1.5 V VF forward voltage IF = 2 A; Tj = 25 °C - 1.04 1.5 V hFE DC current gain IC = 1 mA; VCE = 5 V; Tmb = 25 °C; see Figure 12 10 15 32 IC = 500 mA; VCE = 5 V; Tmb = 25 °C; see Figure 12 13 21 32 IC = 2 A; VCE = 5 V; Tmb = 25 °C; see Figure 12 11 16 22 IC = 3 A; VCE = 5 V; Tmb = 25 °C; see Figure 12 - 12.5 - Dynamic characteristics ton turn-on time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 13; see Figure 14 - 0.52 0.6 µs ts storage time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 13; see Figure 14 - 2.7 3.3 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 15; see Figure 16 - 1.2 1.4 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 15; see Figure 16 - - 1.8 µs IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 13; see Figure 14 - 0.3 0.35 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 15; see Figure 16 - - 0.12 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 15; see Figure 16 - 0.03 0.06 µs tf [1] fall time Measured with half-sine wave voltage (curve tracer) BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode IC (mA) 50 V 100 Ω to 200 Ω horizontal oscilloscope 250 vertical 6V 300 Ω 1Ω 100 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 7. Test circuit for collector-emitter sustaining voltage Oscilloscope display for collector-emitter sustaining voltage test waveform 001aab997 001aab995 2.0 VCEsat (V) Fig 8. VCEsat (V) 0.5 IC = 1 A 2A 3A 4A 1.6 0.4 1.2 0.3 0.8 0.2 0.4 0 10−2 0.1 10−1 1 10 0 10−1 IB (A) Fig 9. Product data sheet 10 IC (A) Collector-emitter saturation voltage as a function of base current; typical values BUJD203AD 1 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 001aab996 1.4 VBEsat (V) 1.2 001aab994 102 Tj = 25 °C hFE 1.0 VCE = 5 V 0.8 10 1V 0.6 0.4 0.2 0 10−1 1 1 10−2 10 10−1 1 10 IC (A) IC (A) Fig 11. Base-emitter saturation voltage as a function of collector current; typical values VCC Fig 12. DC current gain as a function of collector current; typical values IC ICon 90 % 90 % RL VIM 0 RB DUT 10 % tp t tf T 001aab989 ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff Fig 13. Test circuit for resistive load switching BUJD203AD Product data sheet 001aab990 Fig 14. Switching times waveforms for resistive load All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode IC VCC ICon 90 % LC IBon VBB LB DUT 001aab991 10 % t tf IB ts toff IBon t −IBoff 001aab992 Fig 15. Test circuit for inductive load switching BUJD203AD Product data sheet Fig 16. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L L2 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 17. Package outline SOT428 (DPAK) BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 8. Soldering 7.00 6.15 5.90 5.80 1.80 1.00 4.725 4.60 5.75 5.65 6.50 1.15 3.60 6.00 2.45 6.00 6.125 0.30 2.40 2.30 solder lands 1.30 1.40 1.65 1.50 solder resist 4.57 SOT428 occupied area solder paste Fig 18. Reflow soldering footprint for SOT428 (DPAK) BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUJD203AD v.1 20100927 Product data sheet - - BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUJD203AD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 BUJD203AD NXP Semiconductors NPN power transistor with integrated diode 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 September 2010 Document identifier: BUJD203AD