BAT54XV2 Schottky Barrier Diode Features • • • • • • • Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1 Pb-free Version and RoHS Compliant Matte Tin (Sn) Lead Finish Green Mold Compound Anode Cathode ELECTRICAL SYMBOL SOD-523F Band Indicates Cathode BAT54XV2 Marking: 5B Ordering Information Part Number Top Mark Package Packing Method BAT54XV2 5B SOD-523F 2L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value Unit 30 V Maximum DC Blocking Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Peak Forward Surge Current (Square Wave at pw = 300 μsec) 4 A +125 °C -65 to +125 °C VR TJ TSTG Operating Junction Temperature Storage Temperature Range © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 www.fairchildsemi.com BAT54XV2 — Schottky Barrier Diode June 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 200 mW Thermal Resistance, Junction-to-Ambient(1) 500 °C/W Note: 1. Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol BVR IR VF TRR C Parameter Conditions Breakdown Voltage IR = 10 μA Reverse Leakage Current VR = 25 V Forward Voltage Min. Max. 30 Unit V 2 IF = 0.1 mA 0.24 IF = 1 mA 0.32 IF = 10 mA 0.40 IF = 30 mA 0.50 IF = 100 mA 0.80 μA V Reverse Recovery Time IF = IR = 10 mA, RL = 100 Ω, IRR = 1 mA 5 nS Capacitance VR = 1 V, f = 1 MHz 10 pF © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 www.fairchildsemi.com 2 BAT54XV2 — Schottky Barrier Diode Thermal Characteristics 6 1000 10 o 125 C 5 Forward Current, IF [mA] Reverse Current, IR [nA] 10 o 4 75 C 10 3 10 o 25 C 2 10 1 10 o 100 o 125 C 10 o 75 C o 25 C 1 o -25 C -25 C 0 10 -1 0.1 10 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 700 800 Forward Voltage, VF [mV] Reverse Voltage, VR [V] Figure 1. Reverse Current vs. Reverse Voltage Figure 2. Forward Voltage vs. Forward Current 250 20 o f=1MHz 15 Capacitance, CT [pF] Power Dissipation, PD [mW] TA=25 C 10 5 200 150 100 50 0 0 0 5 10 15 20 25 30 35 0 40 50 75 100 125 150 o Reverse Voltage, VR [V] Temperature, TA[ C] Figure 3. Total Capacitance © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 25 Figure 4. Power Derating www.fairchildsemi.com 3 BAT54XV2 — Schottky Barrier Diode Typical Performance Characteristics BAT54XV2 — Schottky Barrier Diode Physical Dimensions Figure 5. 2-LEAD, SOD523F, JEITA SC-79, 0.7MM TALL © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. 1.2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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