RENESAS RKD750KN

RKD750KN
Silicon Schottky Barrier Diode for Detector
REJ03G1359-0100
Rev.1.00
May 15, 2006
Features
• Low forward voltage, Low capacitance and High detection sensitivity.
• Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and
products.
Ordering Information
Type No.
RKD750KN
Laser Mark
A
Package Name
MP8
Pin Arrangement
1
A
Cathode mark
Mark
2
1. Cathode
2. Anode
Rev.1.00 May 15, 2006 page 1 of 4
Package Code
PXSN0002ZA-A
RKD750KN
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
Value
2
5
125
−55 to +125
VR
IO
Tj
Tstg
Unit
V
mA
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Capacitance
ESD-Capability *1
Symbol
VF1
VF2
C

Min



10
Typ


0.3

Max
0.15
0.27


Unit
V
pF
V
Test Condition
IF = 0.1 mA
IF = 1 mA
VR = 0.5 V, f = 1 MHz
C = 200 pF, RL = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR ≥ 100 µA at VR =0.5 V
2. Please do not use the soldering iron due to avoid high stress to the MP8 package.
Rev.1.00 May 15, 2006 page 2 of 4
RKD750KN
10–2
10–2
10–3
10–3
Reverse current IR (A)
Forward current IF (A)
Main Characteristic
10–4
10–5
10–6
0
0.1
0.2
0.3
0.4
0.5
10–4
Ta = 25°C
10–5
10–6
0
1
2
3
4
5
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
Ta = 75°C
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00 May 15, 2006 page 3 of 4
RKD750KN
Package Dimensions
Package Name
MP8
JEITA Package Code

RENESAS Code
PXSN0002ZA-A
MASS[Typ.]
0.00029g
Previous Code
MP8V
D
b
L
E
L
A
Reference
Symbol
A
b
D
E
L
Rev.1.00 May 15, 2006 page 4 of 4
Dimension in Millimeters
Min
0.27
0.38
0.47
0.77
0.23
Nom
0.30
0.40
0.50
0.80
0.25
Max
0.33
0.42
0.53
0.83
0.27
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