KSP94TA - Fairchild Semiconductor

KSP94
PNP Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• High Collector-Emitter Voltage: VCEO = -400 V
• Low Collector-Emitter Saturation Voltage
• Complement to KSP44
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSP94BU
KSP94
TO-92 3L
Bulk
KSP94TA
KSP94
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-6
V
-300
mA
IC
Collector Current
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to +150
°C
© 2002 Fairchild Semiconductor Corporation
KSP94 Rev. 1.4
www.fairchildsemi.com
KSP94 — PNP Epitaxial Silicon Transistor
February 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
625
mW
Derate Above 25°C
5.0
mW/°C
Thermal Resistance, Junction-to-Ambient
200
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = -100 μA, IE = 0
-400
V
BVCEO
Collector-Emitter Breakdown Voltage IC = -100 μA, IB = 0
-400
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-6
V
ICBO
Collector Cut-Off Current
VCB = -300 V, IE = 0
ICES
Collector Cut-Off Current
VCE = -400 V, VBE = 0
IEBO
Emitter Cut-Off Current
VEB = -4 V, IC = 0
hFE
DC Current Gain
40
VCE = -10 V, IC = -10 mA
50
VCE = -10 V, IC = -50 mA
45
VCE = -10 V, IC = -100 mA
40
nA
-1
μA
-100
nA
300
IC = -10 mA, IB = -1 mA
-500
IC = -50 mA, IB = -5 mA
-750
Base-Emitter Saturation Voltage
IC = -10 mA, IB = -1 mA
-750
Output Capacitance
VCB = -20 V, IE = 0,
f = 1 MHz
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Cob
VCE = -10 V, IC = -1 mA
-100
© 2002 Fairchild Semiconductor Corporation
KSP94 Rev. 1.4
7
mV
mV
pF
www.fairchildsemi.com
2
KSP94 — PNP Epitaxial Silicon Transistor
Thermal Characteristics(1)
-10
1000
VBE(sat), SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = -10V
100
10
IC = 10 IB
-1
-0.1
-0.01
1
-1
-10
-100
-1
-1000
IC[mA], COLLECTOR CURRENT
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
100
-10
IE = 0
f = 1MHz
IC = 10 IB
Cob[pF], CAPACITANCE
VCE(sat), SATURATION VOLTAGE
-10
-1
-0.1
1
-0.1
-0.01
-1
-10
-100
-1000
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
© 2002 Fairchild Semiconductor Corporation
KSP94 Rev. 1.4
10
Figure 4. Collector Output Capacitance
www.fairchildsemi.com
3
KSP94 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
KSP94 — PNP Epitaxial Silicon Transistor
Physical Dimensions
D
Figure 5. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2002 Fairchild Semiconductor Corporation
KSP94 Rev. 1.4
www.fairchildsemi.com
4
KSP94 — PNP Epitaxial Silicon Transistor
Physical Dimensions (Continued)
Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type
© 2002 Fairchild Semiconductor Corporation
KSP94 Rev. 1.4
www.fairchildsemi.com
5
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The datasheet is for reference information only.
Rev. I73
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