TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Equivalent Circuit Features C • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122 B TO-220 1 R1 1.Base 2.Collector 3.Emitter R2 R1 ≅ 8kΩ R2 ≅ 0.12kΩ E Ordering Information Part Number Top Mark Package Packing Method TIP125 TIP125 TO-220 3L (Single Gauge) Bulk TIP125TU TIP125 TO-220 3L (Single Gauge) Rail TIP126 TIP126 TO-220 3L (Single Gauge) Bulk TIP126TU TIP126 TO-220 3L (Single Gauge) Rail TIP127 TIP127 TO-220 3L (Single Gauge) Bulk TIP127TU TIP127 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol VCBO Parameter Value Collector-Base Voltage TIP125 -60 TIP126 -80 TIP127 -100 TIP125 -60 TIP126 -80 TIP127 -100 Unit V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -5 A ICP Collector Current (Pulse) -8 A IB Base Current (DC) -120 mA TJ Junction Temperature 150 °C -65 to 150 °C TSTG Storage Temperature Range © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com 1 TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor November 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 65 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions TIP125 VCEO(sus) ICEO Collector-Emitter Sustaining TIP126 Voltage TIP127 Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) Max. Unit -60 IC = -100 mA, IB = 0 -80 V -100 TIP125 VCE = -30 V, IB = 0 -2 TIP126 VCE = -40 V, IB = 0 -2 TIP127 VCE = -50 V, IB = 0 -2 TIP125 VCB = -60 V, IE = 0 -1 TIP126 VCB = -80 V, IE = 0 -1 TIP127 VCB = -100 V, IE = 0 -1 VEB = -5 V, IC = 0 -2 VCE = -3 V, IC = -0.5 A 1000 VCE = -3 V, IC = -3 A 1000 mA mA mA IC = -3 A, IB = -12 mA -2 IC = -5 A, IB = -20 mA -4 Base-Emitter On Voltage(1) VCE = -3 V, IC = -3 A -2.5 V Output Capacitance VCB = -10 V, IE = 0, f = 0.1 MHz 300 pF VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on) Cob Min. V Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com 2 TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Thermal Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = -4V 1k 100 -0.1 -1 -3.5 IC = 250IB -3.0 -2.5 -2.0 VBE(sat) -1.5 -1.0 VCE(sat) -0.5 -0.1 -10 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 1000 -10 s 0μ 10 IC[A], COLLECTOR CURRENT s 5m Cob Cib s 0μ 50 ms 1 100 DC Cob[pF] Cib[pF], CAPACITANCE f = 0.1MHz -1 -0.1 TIP125 TIP126 TIP127 10 -0.1 -1 -10 -0.01 -100 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Figure 3. Output and Input Capacitance vs. Reverse Voltage Figure 4. Safe Operating Area 90 PC[W], POWER DISSIPATION 75 60 45 30 15 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com 3 TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Typical Performance Characteristics TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Physical Dimensions Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2001 Fairchild Semiconductor Corporation TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® AccuPower¥ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ®* ® TinyBoost TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* μSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ Xsens™ ❺™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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