TIP31A / TIP31C NPN Epitaxial Silicon Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP32 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP31A TIP31A TO-220 3L (Single Gauge) Bulk TIP31C TIP31C TO-220 3L (Single Gauge) Bulk TIP31CTU TIP31C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value TIP31A 60 TIP31C 100 TIP31A 60 TIP31C 100 Unit VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 5 A IB Base Current TJ Junction Temperature TSTG Storage Temperature Range © 2000 Fairchild Semiconductor Corporation TIP31A / TIP31C Rev. 1.1.0 V V 1 A 150 °C -65 to 150 °C www.fairchildsemi.com TIP31A / TIP31C — NPN Epitaxial Silicon Transistor November 2014 Values are at TC = 25°C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 40 Unit W Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) Parameter Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) VBE(on) fT TIP31A Collector-Emitter Sustaining Voltage(1) ICEO VCE(sat) Conditions Collector-Emitter Saturation Base-Emitter On TIP31C IC = 30 mA, IB = 0 Min. Max. 60 V 100 TIP31A VCE = 30 V, IB = 0 0.3 TIP31C VCE = 60 V, IB = 0 0.3 TIP31A VCE = 60 V, VEB = 0 200 TIP31C VCE = 100 V, VEB = 0 200 VEB = 5 V, IC = 0 Voltage(1) Voltage(1) Current Gain Bandwidth Product 1 VCE = 4 V, IC = 1 A 25 VCE = 4 V, IC = 3 A 10 Unit mA μA mA 50 IC = 3 A, IB = 375 mA 1.2 V VCE = 4 V, IC = 3 A 1.8 V VCE = 10 V, IC = 500 mA, f = 1 MHz 3.0 MHz Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2000 Fairchild Semiconductor Corporation TIP31A / TIP31C Rev. 1.1.0 www.fairchildsemi.com 2 TIP31A / TIP31C — NPN Epitaxial Silicon Transistor Thermal Characteristics VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 1000 10000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 50 10 IC(MAX) (PULSE) 45 IC(MAX) (DC) s 1m PC[W], POWER DISSIPATION 100μs s 5m IC[A], COLLECTOR CURRENT 100 1 TIP31 VCEO MAX. TIP31A VCEO MAX. TIP31B VCEO MAX. TIP31C VCEO MAX. 30 25 20 15 10 0 0 100 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area © 2000 Fairchild Semiconductor Corporation TIP31A / TIP31C Rev. 1.1.0 35 5 0.1 10 40 Figure 4. Power Derating www.fairchildsemi.com 3 TIP31A / TIP31C — NPN Epitaxial Silicon Transistor Typical Performance Characteristics TIP31A / TIP31C — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2000 Fairchild Semiconductor Corporation TIP31A / TIP31C Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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