MMBD914 - Small Signal Diode

MMBD914
Small Signal Diode
Connection Diagram
3
3
3
5D
2
1
1
2
1
2NC
SOT-23
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBD914
5D
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-Repetitive Peak Forward
Surge Current
TSTG
Storage Temperature Range
TJ
Parameter
Operating Junction Temperature
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
2.0
A
-55 to +150
°C
150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2001 Fairchild Semiconductor Corporation
MMBD914 Rev. 1.4
www.fairchildsemi.com
MMBD914 — Small Signal Diode
February 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Power Dissipation
350
mW
Thermal Resistance, Junction-to-Ambient
357
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
IR = 5.0 μA
75
IR = 100 μA
100
Max.
Unit
V
VR
Breakdown Voltage
VF
Forward Voltage
IF = 10 mA
VR = 20 V
25
nA
IR
Reverse Current
VR = 20 V, TA = 150°C
50
μA
VR = 75 V
5.0
μA
1.0
V
CT
Total Capacitance
VR = 0, f = 1.0 MHz
4.0
pF
trr
Reverse Recovery Time
IF = 10 mA, VR = 6 V,
IRR = 1.0 mA, RL = 100 Ω
4.0
ns
2.5
V
VFR
IF = 50 mA, PEAK SQUARE
Peak Forward Recovery Voltage WAVE PULSE WIDTH = 0.1 μS
5 kHz – 100 kHz REP RATE
© 2001 Fairchild Semiconductor Corporation
MMBD914 Rev. 1.4
www.fairchildsemi.com
2
MMBD914 — Small Signal Diode
Thermal Characteristics
150
140
130
120
110
1
Ta= 25 ° C
300
Reverse Current, IR [nA]
Reverse Voltage, V R [V]
Ta= 25 °C
2
3
5
10
20
30
50
250
200
150
100
50
0
100
10
20
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μA
50
70
100
Figure 2. Reverse Current vs. Reverse Voltage
IR - 10 to 100 V
Ta= 25 °C
Ta= 25 ° C
700
Forward Voltage, VF [mV]
450
Forward Voltage, VF [mV]
30
Reverse Voltage, V R [V]
400
350
300
650
600
550
500
250
1
2
3
5
10
20
30
50
450
100
0.1
0.2
Forward Current, IF [uA]
0.3
0.5
1
2
3
5
10
Forward Current, IF [mA]
Figure 3. Forward Voltage vs. Forward Current
VF - 1.0 to 100 μA
Figure 4. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
1.3
Ta= 25 ° C
Ta= 25 ° C
Total Capacitance [pF]
Forward Voltage, VF [V]
1.4
1.2
1.0
0.8
0.6
10
20
30
50
100
200
300
1.1
1.0
500
0
Forw ard C urrent, I F [m A ]
2
4
6
8
10
12
14
R everse V oltage [V ]
Figure 5. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
© 2001 Fairchild Semiconductor Corporation
MMBD914 Rev. 1.4
1.2
Figure 6. Total Capacitance vs. Reverse Voltage
www.fairchildsemi.com
3
MMBD914 — Small Signal Diode
Typical Performance Characteristics
400
Ta= 25 °C
3.5
300
3.0
Current [mA]
Reverse Recovery Time [nS]
4.0
2.5
2.0
IF
200
(AV
)
-A
V
100
ER
AG
ER
E
CT
IF IE
1.5
DC
U
RR
EN
TmA
0
1.0
10
20
30
40
50
0
60
50
100
150
Ambient Temperature, T A [ ° C]
Reverse Current [mA]
Figure 8. Average Rectified Current(IF(AV)) vs.
Ambient Temperature(TA)
Figure 7. Reverse Recovery Time vs.
Reverse Current
Power Dissipation, PD [mW ]
500
400
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average T em perature, I O [ ° C ]
Figure 9. Power Derating Curve
© 2001 Fairchild Semiconductor Corporation
MMBD914 Rev. 1.4
www.fairchildsemi.com
4
MMBD914 — Small Signal Diode
Typical Performance Characteristics (Continued)
MMBD914 — Small Signal Diode
Physical Dimensions
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 2001 Fairchild Semiconductor Corporation
MMBD914 Rev. 1.4
www.fairchildsemi.com
5
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Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
© Fairchild Semiconductor Corporation
www.fairchildsemi.com