MMBD914 Small Signal Diode Connection Diagram 3 3 3 5D 2 1 1 2 1 2NC SOT-23 Ordering Information Part Number Top Mark Package Packing Method MMBD914 5D SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Parameter Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 °C 150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2001 Fairchild Semiconductor Corporation MMBD914 Rev. 1.4 www.fairchildsemi.com MMBD914 — Small Signal Diode February 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. IR = 5.0 μA 75 IR = 100 μA 100 Max. Unit V VR Breakdown Voltage VF Forward Voltage IF = 10 mA VR = 20 V 25 nA IR Reverse Current VR = 20 V, TA = 150°C 50 μA VR = 75 V 5.0 μA 1.0 V CT Total Capacitance VR = 0, f = 1.0 MHz 4.0 pF trr Reverse Recovery Time IF = 10 mA, VR = 6 V, IRR = 1.0 mA, RL = 100 Ω 4.0 ns 2.5 V VFR IF = 50 mA, PEAK SQUARE Peak Forward Recovery Voltage WAVE PULSE WIDTH = 0.1 μS 5 kHz – 100 kHz REP RATE © 2001 Fairchild Semiconductor Corporation MMBD914 Rev. 1.4 www.fairchildsemi.com 2 MMBD914 — Small Signal Diode Thermal Characteristics 150 140 130 120 110 1 Ta= 25 ° C 300 Reverse Current, IR [nA] Reverse Voltage, V R [V] Ta= 25 °C 2 3 5 10 20 30 50 250 200 150 100 50 0 100 10 20 Reverse Current, IR [uA] Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 μA 50 70 100 Figure 2. Reverse Current vs. Reverse Voltage IR - 10 to 100 V Ta= 25 °C Ta= 25 ° C 700 Forward Voltage, VF [mV] 450 Forward Voltage, VF [mV] 30 Reverse Voltage, V R [V] 400 350 300 650 600 550 500 250 1 2 3 5 10 20 30 50 450 100 0.1 0.2 Forward Current, IF [uA] 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Figure 3. Forward Voltage vs. Forward Current VF - 1.0 to 100 μA Figure 4. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA 1.3 Ta= 25 ° C Ta= 25 ° C Total Capacitance [pF] Forward Voltage, VF [V] 1.4 1.2 1.0 0.8 0.6 10 20 30 50 100 200 300 1.1 1.0 500 0 Forw ard C urrent, I F [m A ] 2 4 6 8 10 12 14 R everse V oltage [V ] Figure 5. Forward Voltage vs. Forward Current VF - 10 to 800 mA © 2001 Fairchild Semiconductor Corporation MMBD914 Rev. 1.4 1.2 Figure 6. Total Capacitance vs. Reverse Voltage www.fairchildsemi.com 3 MMBD914 — Small Signal Diode Typical Performance Characteristics 400 Ta= 25 °C 3.5 300 3.0 Current [mA] Reverse Recovery Time [nS] 4.0 2.5 2.0 IF 200 (AV ) -A V 100 ER AG ER E CT IF IE 1.5 DC U RR EN TmA 0 1.0 10 20 30 40 50 0 60 50 100 150 Ambient Temperature, T A [ ° C] Reverse Current [mA] Figure 8. Average Rectified Current(IF(AV)) vs. Ambient Temperature(TA) Figure 7. Reverse Recovery Time vs. Reverse Current Power Dissipation, PD [mW ] 500 400 300 SOT-23 Pkg 200 100 0 0 50 100 150 200 Average T em perature, I O [ ° C ] Figure 9. Power Derating Curve © 2001 Fairchild Semiconductor Corporation MMBD914 Rev. 1.4 www.fairchildsemi.com 4 MMBD914 — Small Signal Diode Typical Performance Characteristics (Continued) MMBD914 — Small Signal Diode Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2001 Fairchild Semiconductor Corporation MMBD914 Rev. 1.4 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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