W29GL256S 256M-BIT 3.0-VOLT PARALLEL FLASH

W29GL256S
256M-BIT
3.0-VOLT PARALLEL FLASH MEMORY WITH
PAGE MODE
Publication Release Date: Jul 02, 2014
Revision C
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W29GL256S
TABLE OF CONTENTS
1
General Description ....................................................................................................................... 8
2
FEATURES ................................................................................................................................... 8
3
PIN CONFIGURATION ................................................................................................................. 9
4
BLOCK DIAGRAM....................................................................................................................... 10
5
PIN DESCRIPTION ..................................................................................................................... 11
6
Introduction .................................................................................................................................. 12
7
ARRAY ARCHITECTURE ........................................................................................................... 15
7.1
Flash Main Memory Array ....................................................................................................... 17
7.2
CFI and Device ID (CFI-ID) ..................................................................................................... 17
7.3
Status Register ........................................................................................................................ 18
7.4
Data Polling Status .................................................................................................................. 19
7.5
Sector Protection Control ........................................................................................................ 19
8
7.5.1
Lock Register.................................................................................................................. 19
7.5.2
Individual Protection Bits (IPB) ....................................................................................... 19
7.5.3
IPB Lock ......................................................................................................................... 20
7.5.4
Dynamic Protection Bits (DPB) ...................................................................................... 20
Functional Descriptions ............................................................................................................... 20
8.1
Read ........................................................................................................................................ 20
8.1.1
Random Read ................................................................................................................ 20
8.1.2
Page Read...................................................................................................................... 21
8.2
Device Reset Operations......................................................................................................... 21
8.3
Standby Mode ......................................................................................................................... 22
8.4
Automatic Sleep ...................................................................................................................... 22
8.5
Output Disable Mode ............................................................................................................... 22
8.6
Program Methods .................................................................................................................... 23
8.6.1
Asynchronous Write ....................................................................................................... 23
8.6.2
Word Programming ........................................................................................................ 23
8.6.3
Write Buffer Programming .............................................................................................. 25
8.7
Program Suspend / Program Resume Commands ................................................................. 30
8.8
Erase Methods ........................................................................................................................ 31
8.9
8.8.1
Chip Erase ...................................................................................................................... 31
8.8.2
Sector Erase ................................................................................................................... 32
Erase Suspend / Erase Resume ............................................................................................. 33
8.10 Blank Check............................................................................................................................. 34
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8.11 Enhanced Sector Protection Methods ..................................................................................... 35
8.11.1 Enhanced Sector Protection (ESP) ................................................................................ 35
8.11.2 IPB Lock ......................................................................................................................... 37
8.11.3 Individual Protection Bits (IPB) ....................................................................................... 37
8.11.4 Dynamic Protection Bits (DPB) ...................................................................................... 37
8.11.5 Sector Protection Bit Status Summary ........................................................................... 38
8.11.6 Lock Register.................................................................................................................. 38
8.12 Security Sector Region ............................................................................................................ 39
8.13 Monitoring Device Status......................................................................................................... 40
8.13.1 Status Register ............................................................................................................... 40
8.13.2 Data Polling Status ......................................................................................................... 41
8.14 Enhanced Variable I/O ............................................................................................................ 47
8.15 Ready/#Busy ........................................................................................................................... 47
8.16 Hardware Data Protection Options .......................................................................................... 48
8.16.1 Write Protect (#WP)........................................................................................................ 48
8.16.2 Write Pulse “Glitch” Protection ....................................................................................... 48
8.16.3 Power Up Write Inhibit .................................................................................................... 48
8.16.4 Logical Inhibit.................................................................................................................. 48
8.17 Inherent Data Protection.......................................................................................................... 49
8.17.1 Command Protection ...................................................................................................... 49
8.18 Operating Modes and Signal States Table.............................................................................. 50
8.19 Instruction Definition Tables .................................................................................................... 51
8.20 Common Flash Interface and Device ID (CFI-ID) ................................................................... 57
9
Electrical Specifications ............................................................................................................... 62
9.1
Absolute Maximum Ratings ..................................................................................................... 62
9.1.1
9.2
Input Signal Overshoot ................................................................................................... 62
Operating Ranges ................................................................................................................... 63
9.2.1
Temperature Ranges...................................................................................................... 63
9.2.2
Power Supply Voltages .................................................................................................. 63
9.2.3
Power Up and Power-Down ........................................................................................... 63
9.3
DC Characteristics ................................................................................................................... 65
9.4
Capacitance Characteristics .................................................................................................... 67
10
Timing Specifications................................................................................................................... 68
10.1 AC Test Conditions .................................................................................................................. 68
10.2 Power Up Reset and Hardware Reset .................................................................................... 69
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10.2.1 Power Up Reset ............................................................................................................. 69
10.2.2 Hardware Reset.............................................................................................................. 71
10.3 AC Characteristics ................................................................................................................... 72
10.3.1 Internal Algorithm Performance Table............................................................................ 72
10.3.2 Asynchronous Read Operations .................................................................................... 73
10.3.3 Asynchronous Write Operations..................................................................................... 75
10.3.4 Alternate #CE Controlled Write Operations ................................................................... 81
11
Package Dimensions ................................................................................................................... 83
11.1 TSOP 56-pin 14x20mm ........................................................................................................... 83
11.2 Thin & Fine-Pitch Ball Grid Array, 56 ball, 7x9mm (TFBGA56) .............................................. 84
11.3 Low-Profile Fine-Pitch Ball Grid Array, 64-ball 11x13mm (LFBA64)....................................... 85
12
Ordering Information.................................................................................................................... 86
12.1 Ordering Part Number Definitions ........................................................................................... 86
12.2 Valid Part Numbers and Top Side Marking ............................................................................. 87
13
History ......................................................................................................................................... 88
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TABLE OF TABLES
Table 5-1 Pin Description ..................................................................................................................... 11
Table 6-1 W29GL256S Address Map................................................................................................... 14
Table 7-1 W29GL256S Sector and Memory Address Map .................................................................. 17
Table 7-2 CFI-ID Address Map Overview ............................................................................................ 18
Table 8-1 Write Buffer Programming Command Sequence ................................................................. 30
Table 8-2 Sector Protection Status....................................................................................................... 38
Table 8-3 Lock Register ....................................................................................................................... 38
Table 8-4 Security Sector Region......................................................................................................... 39
Table 8-5 Status Register ..................................................................................................................... 40
Table 8-6 Data Polling Status ............................................................................................................... 47
Table 8-7 Interface Conditions ............................................................................................................. 50
Table 8-8 Read, Write, Program and Erase Definitions ....................................................................... 51
Table 8-9 CFI-ID (Autoselect) Definitions ............................................................................................. 52
Table 8-10 Security Sector Region Command Definitions ................................................................... 52
Table 8-11 Lock Register Command Set Definitions ........................................................................... 53
Table 8-12 IPB Non-Volatile Sector Protection Command Set Definitions .......................................... 53
Table 8-13 Global Non-Volatile Sector Protection Freeze Command Set Definitions ......................... 54
Table 8-14 DPB Volatile Sector Protection Command Set Definitions ................................................ 54
Table 8-15 ID (Autoselect) Address Map ............................................................................................ 57
Table 8-16 CFI Query Identification String ........................................................................................... 59
Table 8-17 CFI System Interface String ............................................................................................... 59
Table 8-18 CFI Device Geometry Definition ......................................................................................... 60
Table 8-19 CFI Primary Vendor-Specific Extended Query .................................................................. 61
Table 9-1 Absolute Maximum Ratings ................................................................................................. 62
Table 9-2 Power Up/Power-Down Voltage and Timing ........................................................................ 63
Table 9-3 DC Characteristics ............................................................................................................... 65
Table 9-4 Connector Capacitance for FBGA (LFBGA64) Package ..................................................... 67
Table 9-5 Connector Capacitance for TSOP (TSOP56) Package ....................................................... 67
Table 9-6 Connector Capacitance for TFBGA (TFBGA56) Package ................................................... 67
Table 10-1 Test Specification ............................................................................................................... 68
Table 10-2 Power ON and Reset Parameters...................................................................................... 69
Table 10-3 Internal Algorithm Characteristics ...................................................................................... 72
Table 10-4 Read Operation EVIO = 1.65V to VCC, VCC = 2.7V to 3.6V ............................................ 73
Table 10-5 Write Operations ................................................................................................................ 75
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Table 10-6 Erase/Program Operations ................................................................................................ 78
Table 10-7 Alternate #CE Controlled Write Operations ....................................................................... 81
Table 12-1 Valid Part Numbers and Markings ..................................................................................... 87
Table 13-1 Revision History ................................................................................................................. 88
TABLE OF FIGURES
Figure 3-1 LFBGA64 TOP VIEW (Face Down) ...................................................................................... 9
Figure 3-2 56-PIN STANDARD TSOP (Top View) ................................................................................. 9
Figure 3-3 TFBGA56 TOP VIEW (Face Down) ...................................................................................... 9
Figure 4-1 Simplified Block Diagram .................................................................................................... 10
Figure 8-1 Word Program Operation .................................................................................................... 25
Figure 8-2 Write Buffer Programming Operation with Data Polling Status .......................................... 28
Figure 8-3 Write Buffer Programming Operation with Status Register ................................................ 29
Figure 8-4 Sector Erase operation ....................................................................................................... 33
Figure 8-5 Enhanced Sector Protection IPB Program Algorithm ......................................................... 36
Figure 8-6 Data# Polling Algorithm....................................................................................................... 42
Figure 8-7 Toggle Bit Program ............................................................................................................. 46
Figure 9-1 Max Negative Overshoot Waveform ................................................................................... 62
Figure 9-2 Positive Overshoot Waveform ............................................................................................ 62
Figure 9-3 Power-up ............................................................................................................................. 64
Figure 9-4 Power-down and Voltage Drop ........................................................................................... 64
Figure 10-1 Device Under Test Setup .................................................................................................. 68
Figure 10-2 Input Switching Test Waveforms ...................................................................................... 68
Figure 10-3 Power Up Reset ................................................................................................................ 70
Figure 10-4 Hardware Reset ................................................................................................................ 71
Figure 10-5 Back to Back Read (tACC) Operation............................................................................... 73
Figure 10-6 Back to Back Read Operation (tRC) ................................................................................. 74
Figure 10-7 Page Read ........................................................................................................................ 74
Figure 10-8 Back to Back Write Operation ........................................................................................... 75
Figure 10-9 Back to Back (#CE VIL) Write Operation .......................................................................... 76
Figure 10-10 Write to Read (tACC) Operation ..................................................................................... 76
Figure 10-11 Write to Read (tCE) Operation ........................................................................................ 77
Figure 10-12 Read to Write (#CE VIL) Operation ................................................................................ 77
Figure 10-13 Read to Write (#CE Toggle) Operation ........................................................................... 78
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Figure 10-14 Program Operation.......................................................................................................... 79
Figure 10-15 Chip/Sector Erase Operation .......................................................................................... 79
Figure 10-16 Data# Polling (During Internal Algorithms) ..................................................................... 80
Figure 10-17 Toggle Bit (During Internal Algorithms) ........................................................................... 80
Figure 10-18 DQ2 vs. DQ6 Comparison Timing .................................................................................. 81
Figure 10-19 Back to Back (#CE) Write Operation .............................................................................. 82
Figure 10-20 (#CE) Write to Read Operation ....................................................................................... 82
Figure 11-1 TSOP 56-pin 14x20mm Package ..................................................................................... 83
Figure 11-2 TFBGA-56, 7x9mm package ............................................................................................ 84
Figure 11-3 LFBGA 64-ball 11x13mm Package................................................................................... 85
Figure 12-1 Ordering Part Numbering .................................................................................................. 86
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W29GL256S
1 GENERAL DESCRIPTION
The W29GL256S Parallel Flash memory provides a storage solution for embedded system
applications that require better performance, lower power consumption and higher density. This
product fabricated on 58 nm process technology. This device offers a fast page access time as fast
as 15ns with a corresponding random access time as fast as 90ns. It features a Write Buffer that
allows a maximum of 256 words (512 bytes) to be programmed in one operation, resulting in faster
effective programming time than standard programming algorithms. The W29GL256S also offers
special features such as Compatible Manufacturer ID that makes the device industry standard
compatible without the need to change firmware.
2 FEATURES
 58 nm Technology
 x16 data bus
 256-WORD (512-byte) Programming
Buffer
o Programming in Page multiples, up to a
maximum of 512 bytes
 Asynchronous 32-byte Page Read
 Single word and multiple program on
same word options
 Sector Erase
o Uniform 128-kbyte sectors
 Enhanced Sector Protection (ESP)
 Volatile and non-volatile protection
methods for each sector
 Security Sector Region
 1024-byte One Time Program (OTP)
array divided into two 512-Byte lockable
regions








 Suspend and Resume commands for
Program and Erase operations
Status Register, Data Polling, and
Ready/Busy pin methods to determine
device status
CFI (Common Flash Interface) support
Single supply (VCC) for read / program /
erase (2.7V to 3.6V)
Enhanced Variable I/O Feature
o Enhanced I/O voltage range (EVIO):
1.65V to VCC
Wide Temperature Range (-40°C to +85°C)
More than 100,000 erase/program cycles
20-year data retention typical
Packaging Options
o 56-pin TSOP, 14x20mm
o 56-ball TFBGA, 7x9mm
o 64-ball LFBGA, 13x11 mm
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3 PIN CONFIGURATION
Figure 3-1 LFBGA64 TOP VIEW (Face Down)
A8
B8
C8
D8
E8
F8
G8
Figure 3-2 56-PIN STANDARD TSOP (Top View)
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
#WE
#RESET
A21
#WP
RY/#BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
RFU
DNU
H8
NC
A22
A23
EVIO
VSS
NC
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
VSS
A13
A12
A14
A15
A16
RFU
DQ15
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
#WE
#RESET
A21
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
RY/#BY
#WP
A18
A20
DQ2
DQ10
DQ11
DQ3
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
#CE
#OE
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
DNU
EVIO
RFU
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
NC
NC
A16
RFU
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
#OE
VSS
#CE
A0
RFU
EVIO
Figure 3-3 TFBGA56 TOP VIEW (Face Down)
B8
C8
D8
E8
F8
G8
A15
A21
A22
A16
RFU
VSS
A7
B7
C7
D7
E7
F7
G7
H7
A11
A12
A13
A14
RFU
DQ15
DQ7
DQ14
A6
B6
C6
D6
E6
F6
G6
H6
A8
A19
A9
A10
DQ6
DQ13
DQ12
DQ5
A5
B5
C5
F5
G5
H5
#WE
A23
A20
DQ4
EVIO
RFU
A4
B4
C4
#WP #RESET RY/#BY
F4
G4
H4
DQ3
VCC
DQ11
A3
B3
C3
D3
E3
F3
G3
H3
NC
NC
A18
A17
DQ1
DQ9
DQ10
DQ2
A2
B2
C2
D2
E2
F2
G2
H2
A7
A6
A5
A4
VSS
#OE
DQ0
DQ8
B1
C1
D1
E1
F1
G1
A3
A2
A1
A0
#CE
DNU
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4 BLOCK DIAGRAM
Figure 4-1 Simplified Block Diagram
VCC
EVIO
VSS
#CE
#OE
CONTROL
OUTPUT
BUFFER
DECODER
MAIN ARRAY
#WE
RY/#BY
#RESET
#WP
A0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
A23
DQ0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
DQ15
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5 PIN DESCRIPTION
Table 5-1 Pin Description
SYMBOL
SIGNAL
TYPE
A0-A23
DQ0-DQ15
#CE
#OE
#WE
#WP
#RESET
Input
I/O
Input
Input
Input
Input
Input
RY/#BY
Output
VCC
EVIO
VSS
Power Supply
Power Supply
Power Supply
NC
-
PIN NAME
Address Inputs
Data Inputs/Outputs
Chip Enable, Device selected at VIL
Output Enable, Output at VIL and HIGH-Z at VIH
Write Enable, Write Mode at VIL and Read Mode at VIH
Hardware Write Protect, Highest & Lowest Sector Protect at VIL
Hardware Reset, device logic to standby and ready to read.
Ready/Busy Status, Indicates whether an Embedded Algorithm
is in progress or complete. At VIL, the device is actively engaged
in an Embedded Algorithm such as erasing or programming. At
HIGH-Z, the device is ready for read or a new command write requires external pull-up resistor to detect the HIGH-Z state.
Multiple devices may have their RY/#BY outputs tied together to
detect when all devices are ready.
Power Supply
Enhanced Variable IO Supply
Ground
No Connection
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6 INTRODUCTION
The W29GL256S is a 3V, 256-Mbit, non-volatile, flash memory device with variable I/O. The device
has a bus width of 16-bits (2-Bytes/1-Word) and word address boundaries are what are used. All read
accesses provide 16 bits of data on every bus cycle. Every write cycle transfers 16 bits of data on the
bus.
XIP and Data Storage flash memories are combined features of the W29GL256S. This enables the
ability of fast programming speeds and reduced random access time of XIP flash in higher densities.
Read access to any random location takes 90 ns to 100 ns depending on device I/O power supply
voltage. Each random access reads an aligned group of data of 32-bytes called a Page. Other words
within the same Page may be read by changing only the low order 4 bits of word address. While in
the same Page, access could take between 15 ns to 30 ns. This read operation is referred as Page
Mode. Higher word address bits will select a different Page and begin another initial access. All read
accesses are asynchronous.
The device control logic is divided into two parallel operating subsections, the Command State
Machine (CSM) and the Write State Controller. Device level signals with the host system during read
and write transfers are monitored by the CSM as needed for the inputs and drive outputs. CSM
delivers data from the current entered address map on read operations; places write address and
data information into the Write State Controller command memory; signals the Write State Controller
of power level changes, write operations and hardware reset, The Write State Controller looks in the
command memory, after a write operation, for correct command sequences and performs Internal
Algorithms that are related.
Within the W29GL256S lie internal complex sequential operations or algorithms that are necessary to
change the state of non-volatile data in the memory array. The internal Write State Controller
manages all device algorithms. The main array data, programming and erasure are the main
algorithms that are performed. When the host system sends command instructions to the flash device
address space and Write State Controller receives these commands, provides status information
during the progress of internal algorithms and performs all the necessary steps to complete the
command.
A logical 1 bit is considered an erased cell. Changing a bit from a logical 1 to a logical 0 is considering
programming. Note, only an erase operation is able to change a 0 to a 1. A restriction to an erase
operation is a minimum of an entire sector (sector erase), which is a 128-kbyte aligned and length
group of data is erased or the entire array can be erased (chip erase). Winbond ships the
W29GL256S with all sectors erased.
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The W29GL256S programming algorithm transfers volatile data from a write buffer to a non-volatile
memory array line; this is called Write Buffer Programming. The size of the buffer is 256-Words (512Bytes). 1 to 256 words can be written at any location in the Write Buffer prior to executing the
programming operation. The programming operation can only be performed on an aligned group of
512 bytes in the flash array which is referred to as a Line.
After the completion of any Write Buffer operation or a reset, the buffer is refreshed to all 1’s. By
default any location that has not be written to a 0 are filled with 1’s. Each page of data that was
loaded into the Write Buffer during a programming operation, the memory array data is unaffected by
1’s in the Write Buffer as it is transferred to a memory array Line.
Program and Erase operations may be affected by the Enhanced Sector Protection (ESP) methods,
preventing any erasure or programming in a sector that may have been previously protected.
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Table 6-1 W29GL256S Address Map
Addresses
A3 - A0
A7 - A0
A15 - A4
A15 - A8
A23 - A16
Value
16
256
4096
256
256
Description
Word Selection
Write Buffer Internal Address
Page Selection
Write-Buffer-Line Selection
Sector Selection
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7 ARRAY ARCHITECTURE
There are several separate address spaces (i.e., Memory Map Overlay) that may appear within the
address range of the flash memory device. Only one MMO can exist or be entered at a time.

Main Memory Array

This non-volatile area is used for storage of data that may be randomly accessed by
asynchronous read operations.

ID/CFI

A Winbond factory programmed area for device characteristics information. It contains the
Common Flash Interface (CFI) and Device Identification (ID) information tables.

Security Sector Region (SSR)

A Non-volatile / One Time Programmable (OTP) memory array used for Winbond factory and
customer programmable permanent data.

Lock Register

This OTP non-volatile word is used to configure the Enhanced Sector Protection (ESP)
features and lock the SSR.

Individual Protection Bits (IPB):

A non-volatile flash memory array with one bit for its associated sector. Programming this bit
protects that sector from programming and erasure.

IPB Lock

Program and erase protection for the IPB bits. When the volatile register bit is enabled no
programming or erasing of the IPB bits is prohibited.

Dynamic Protection Bits (DPB)

Similar to the IPB scheme, this volatile array with one bit for each sector can protect its
associated sector from erasure and programming while the device is powered.

Status Register

Internal algorithm status monitoring can be done using this volatile register.

Data Polling Status:

Legacy software compatible volatile register used as an alternative to the Status Register to
monitor internal algorithm status.
The Main Memory Array is the primary and default address space. This area at any time may be
overlaid by one other address space. All the aforementioned address spaces are considered as a
Memory Map Overlay (MMO). Each MMO replaces the entire address range of the main array.
Addresses outside the current MMO address map are considered as not defined and are reserved for
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future use. Read access is possible outside of an MMO address map and will return non-valid
(undefined) data.
What appears in the flash device address space at any given time is one of four address map modes:

Read Mode

Memory Map Overlay (MMO) Mode

Status Register (SR) Mode

Data Polling Mode
In Read Mode the entire Flash Memory Array may be directly read. Read mode is entered during
Power Up, after a Hardware Reset, Command Reset completion, or when an internal algorithm is
suspended, all of which is controlled by the Write State Controller. While in the Read Mode,
command accesses are permitted when an internal algorithm is suspended. There are subsets of
commands that will be accepted in Read Mode while an Internal Algorithm is suspended.
The Status Register read command can be issued in any mode. This execution will cause the MMO
of the Status Register to appear in the device address space at every word address location. To do
this, the device interface waits for a read access, ignoring any write access. The content of the Status
Register is presented at the next read access, after which it exits the Status Register MMO, and
returns to the previous mode in which the Status Register read command was received.
While the Write State Controller is performing an internal algorithm, such as a non-volatile memory
array program or an erase operation, none of the Main Memory Array is accessible because, the
entire flash device address space is replaced by the MMO of the Data Polling Status at every word
location in the device address space.
While in an internal algorithm operation, only the Status Register Read command or a Program /
Erase suspend command will be accepted, ignoring all other commands. Hence, no other MMO may
be entered.
The Data Polling MMO is visible during an internal algorithm operation and once a suspend command
has been executed it is present up to the moment the device suspends the internal algorithm. When
the internal algorithm is suspended the Data Polling MMO is exited and the Main Memory Array data
is available again. The Data Polling MMO is activated again when the suspended internal algorithm
operation is resumed. At the completion of an internal algorithm operation, the Data Polling MMO is
exited and the device goes back to operation from which it was called.
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As mentioned previously, only one MMO may exist at any one time. Device commands affect only the
currently entered MMO. Not all commands are valid for each MMO. For a listed of valid commands,
see the Command Definition Tables in MMO sections of the table.
Some MMOs have non-volatile data that can be programmed

Individual Protection Bits (IPB), also erase capable

Lock Register

Security Sector Region
Operating in a non-volatile MMO mode while performing a program or erase command, the MMO is
not readable while the internal algorithms is active. As soon as the function has completed, the MMO
mode remains active and is again readable. Suspend and Resume commands are ignored for these
non-volatile modes while these internal algorithms are active.
7.1 Flash Main Memory Array
The W29GL256S family is comprised of uniform 128KB sector size architecture. The table below
shows the sector architecture of the W29GL256S device.
Table 7-1 W29GL256S Sector and Memory Address Map
Sector
Sector Address
A23-A16
Sector Size
(KByte)
X16
Start / Finish
SA00
0000000
128
0000000h
000FFFFh
SA01
0000001
128
0010000h
001FFFFh
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
SA254
11111110
128
0FE0000h
0FEFFFFh
SA255
11111111
128
0FF0000h
0FFFFFFh
Note: This table has been reduced to show relative sector information for the entire device’s individual sectors
and their address ranges (sectors SA02-SA253 are not shown).
7.2 CFI and Device ID (CFI-ID)
There are two methods for systems to identify the type of flash memory installed in the system. The
first method is called the Common Flash Interface (CFI). The second method called Autoselect, which
is now referred to as Device Identification (ID).
Device Identification (ID), a command is used to enable a Memory Map Overlay where up to 16 word
locations can be read to get JEDEC manufacturer identification (ID), device ID, and some
configuration and protection status information from the flash memory.
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The Common Flash Interface (CFI) command enables a Memory Map Overlay where a table of
standard information about how the flash memory is organized and operates can be read.
Typically, these two address spaces have used separate commands and had separate overlays and
are non-overlapping, so they actually can be combined in a single overlay. Either of these two
commands can be used to access the combined Autoselect (ID) and CFI overlay.
The CFI-ID address map overlays the Flash Array data of the sector selected by the address used in
the CFI-ID enter command. While the CFI-ID MMO is entered, the content of all other sectors is
undefined. Address map starts at location 0 of the selected sector. Data is considered as undefined
past the maximum defined address of the CFI-ID MMO to the maximum address of the selected
sector.
To enter the Manufacturer ID (Autoselect) and Common Flash Interface (CFI) MMO command modes
see the Instruction Definition Table.
Table 7-2 CFI-ID Address Map Overview
Word Address
(SA) + 0000h to 000Fh
(SA) + 0010h to 0079h
(SA) + 0080h to FFFFh
Description
Device ID (traditional
Autoselect values)
CFI data structure
Undefined
Read / Write
Read Only
Read Only
Read Only
For the complete address map see the Device ID and Common Interface Tables.
7.3 Status Register
The Status Register, Memory Map Overlay (MMO) contains status for Internal Algorithms in a single
volatile word format. When the read command for the Status Register is issued, status at the time of
captured is presented in the register and the MMO is entered. All word locations in the device
address space contain the Status Register information. Status Register exits the MMO mode after the
first read access and returns to the address space map in use when the Status Register read
command was issued.
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7.4 Data Polling Status
The Data Polling Status, Memory Map Overlay (MMO) monitors the progress of Internal Algorithms
which is contained in a single volatile word. Following the last write cycle of any command sequence
that initiates an Internal Algorithms, the Data Polling Status will be entered. Internal Algorithms are
initiated by one of the following commands:

Blank Check

Chip Erase

Sector Erase

Erase Resume / Program Resume

Word Program

Program Buffer to Flash

Program Resume Enhanced Method

Lock Register Program

IPB Program

All IPB Erase
At all word locations in the device address space, the Data Polling Status word appears. Data Polling
Status MMO is exited and the device address space returns to the address map mode where the
Internal Algorithms was started at the completion of the Internal Algorithms.
7.5 Sector Protection Control
7.5.1
Lock Register
The Lock Register, Memory Map Overlay (MMO) mode contains a single word of One Time
Programmable (OTP) memory. When the MMO mode is entered the Lock Register appears at all
word locations in the device address space. Winbond recommends for future compatibility to read or
program the Lock Register only at location 0 of the device address space.
7.5.2
Individual Protection Bits (IPB)
The IPB, Memory Map Overlay (MMO) mode contains a non-volatile bit in each sector in the device.
When the mode is entered, the IPB bit for a chosen sector appears in the Least Significant Bit (LSB)
of each word in that sector. The non-volatile protection status for that sector is displayed by reading
any word location, where the LSB indicates whether or not the sector is protected. The sector is
protected against programming and erase operations if the bit is has been programmed to a 0. The
sector is not protected by the IPB if the bit has been erased to a 1. Note; there are other features of
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the Enhanced Sector Protection (ESP) that can protect sectors. Winbond recommends for future
compatibility, to read or program the IPB only at word location 0 of the sector.
7.5.3
IPB Lock
The IPB Lock, Memory Map Overlay (MMO) contains a single volatile bit of memory. Programming or
erasing of the IPB is controlled by IPB Lock. IPB is protected against programming and erase
operations, if the bit is 0. The IPB is not protected, if the bit is 1. When the IPB Lock mode is entered,
the IPB Lock bit appears in the Least Significant Bit (LSB) of each word in the device address space.
Winbond recommends for future compatibility, to read or program the IPB Lock only at word location
0 of the device.
7.5.4
Dynamic Protection Bits (DPB)
The DPB Memory Map Overlay (MMO) contains one volatile bit of memory for each Sector. The DPB
bit for a sector appears in the Least Significant Bit (LSB) of each word in the sector after entering the
DPB mode. Reading any word in a sector displays the protection status for that sector. Sectors are
protected during program and erase operations, if the DPB is 0 and unprotected if the bit is 1. Note
there are other features of ESP that can protect the sector. Winbond recommends for future
compatibility to read, set, or clear the DPB only at word location 0 of the sector.
8 FUNCTIONAL DESCRIPTIONS
8.1 Read
8.1.1
Random Read
The memory device is selected by driving Chip Enable (#CE) LOW and the device will leave the
Standby mode. If Write Enable (#WE) is disabled, driven HIGH while #CE is LOW, a random read
operation is started. The particular data output will depends on the MMO mode and the specific
address provided.
The data output is presented on DQ15-DQ0 when #CE is LOW, Output Enable (#OE) is LOW, #WE
is HIGH, address is stable, and the asynchronous access times are met. The Address access time
(tACC) is defined to be equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is defined as the delay from a stable #CE to valid data on the outputs. The #OE
signal must be LOW for at least the period of the output enable time (tOE), before valid read data is
available at the outputs.
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Device outputs will provide valid read data from the currently active address map mode at the end of
the random read access time from address stable (tACC), #OE active (tOE), or #CE active (tCE),
whichever happens last.
A list of other transitional states during Random Read operation;

A new random read access begins if #CE remains LOW and any Address[23:4] signals
change to a new value.

In order to get Back to Back accesses, requires an address change to initiate the second
access and #CE to remains LOW between accesses Read mode with Outputs Disable, If
#CE remains LOW and #OE goes .

Write mode, if #CE remains LOW, #OE goes HIGH, and #WE goes LOW.

Standby mode, if #CE returns HIGH.
8.1.2
Page Read
As in the Random Read mode, a random read access sequence is required. Then if #CE remains
LOW, #OE remains LOW, Address[23:4] signals remains unchanged, and any of the Address[3:0]
signals have change, then a new access within the same Page (32-byte) begins with data appearing
on DQ15-DQ0. The Page Read is much faster (tPACC) than a Random Read access. If #CE goes
HIGH and returns LOW for another access, a random read access is performed and time is required
(tACC or tCE).
8.2 Device Reset Operations
The Hardware Reset (#RESET) input pin provides a hardware method of resetting the device to a
standby mode. Immediately after issuing a Hardware Reset, driving #RESET LOW for at least a
period of tRP:

Any operations in progress are terminated,

Memory Map Overlays (MMO) is exited.

All outputs are set to HIGH-Z.

The Status Register is reset.

The Write State Controller goes to the standby mode.

#CE is ignored for a period of (tRPH), during the reset operation.

#CE must be held HIGH to meet the Reset current specification (ICC5).
Note: An operation that was interrupted should be reinitiated to ensure data integrity. An operation
command sequence should be executed once the device is ready.
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8.3 Standby Mode
Standby is the default, minimum power condition while the device is not selected (#CE = HIGH). All
inputs are ignored in this mode and all outputs, except RY/#BY are at HIGH-Z. The Write State
Controller direct output of the RY/#BY determines its state and is not controlled by other devices or
interfaces.
8.4 Automatic Sleep
When addresses remain stable for tACC + 30 ns, the device will automatically enter the Auto Sleep
mode and latches the output data. Data on the output pins depends on the level of the #OE signal.
The automatic sleep mode is designed to reduce device interface current (ICC6). #OE signal levels are
independent of the automatic sleep mode current. The automatic sleep mode current (ICC6)
specifications can be found in the DC Characteristics Tables.
It’s important to note that slow clock durations help reduce current consumption when the Automatic
Sleep mode goes active. During slow clock periods, read and write cycles may extend many times
their length versus when the clock is operating at high speed. Even when the chip enable is LOW
throughout these extended data transfer cycles, the memory device Command State Machine (CSM)
will enter the Automatic Sleep mode. This keeps the device in the Automatic Sleep power level for
most of the extended duration of the data transfer cycles. Obviously this method is beneficial rather
than consuming full read power all the time that the device is selected.
Note, the Write State Controller operates independent of the automatic sleep mode of the Command
State Machine (CSM) and will continue to draw current during an active Internal Algorithm. Only when
both entities are in their standby modes is the standby level current minimized.
8.5 Output Disable Mode
When the #CE signal is driven LOW, either a controlled read or write data transfer may begin. When
there is a period at the start of a data transfer when Chip Enable is LOW, Address has become valid,
#WE is HIGH and Output Enable (#OE) is HIGH. During this point a Random Read process is started
while the data outputs remain at HIGH-Z (Output Disabled). Driving the #OE signal LOW, the device
interface transitions to the Random Read mode and output data is actively driven. If in the event the
Write Enable (#WE) signal is driven LOW, the device interface transitions to the Write mode. The host
system interface should never drive #OE and #WE LOW at the same time; this will prevent conflicts
with the device.
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8.6 Program Methods
8.6.1
Asynchronous Write
When #WE goes LOW after CE is LOW, there is a transition from one of the read modes to the Write
mode. If #WE is LOW before #CE goes LOW, there is a transition from the Standby mode directly to
the Write mode without beginning a read access. At this point setting Output Enable (#OE) HIGH will
start a write data transfer.
Address is captured by the falling edge of #WE or #CE, whichever occurs last. Data is captured by
the rising edge of #WE or #CE, whichever occurs first.
A #WE controlled Write access is when the #CE goes LOW before #WE goes LOW and stays LOW
after #WE goes HIGH. When #WE are HIGH and #CE goes HIGH, there is a transition to the Standby
mode. If #CE remains LOW and #WE goes HIGH, there is a transition to the Read with Output
Disable state.
A #CE controlled write mode is when #WE is LOW before #CE goes LOW, the write transfer is
started by #CE going LOW. Then if #WE goes LOW after #CE goes HIGH, the address and data is
latch by the rising edge of #CE.
Another #CE controlled write mode access is when #WE is LOW before #CE goes LOW and remains
LOW after #CE goes HIGH. This is a #CE controlled Write transitions to the Standby mode.
An address change is required to initiate a Read access following a Write access, if #CE remains
LOW between accesses.
An address change is required to initiate the second write access in a Back to Back write in which
#CE remains LOW between accesses.
The Write State Controller command memory array is not readable by the host system and has no
MMO. Its purpose is to examine the address and data in each write transfer to determine if the write
is a legal command sequence. If the command sequence is correct, the Write State Controller will
initiate the appropriate Internal Algorithms.
8.6.2
Word Programming
Word programming programs a single word anywhere in the Main Memory Array.
The Word Programming command is a four write cycle sequence. This is done by writing the unlock
write command in the first two cycles, a program set up command in the third cycle and finally, in the
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fourth cycle the program address and data are written. This will initiate the Internal Word Program
algorithm. No further input controls are required. The Internal Algorithm generates all the
programming pulses and programmed cell verifications. When the Internal Word Program algorithm is
complete, the Write State Controller then returns to its standby mode.
Program operation status can be determined by monitoring the RY/#BY output, reading the Status
Register, or by using Data Polling Status.
Program Suspend is the only command that can be written to the device during the Internal Program
Algorithm, all others are ignored. However, a hardware reset (#RESET = VIL) will immediately
terminates the programming operation. Then after tRPH time, returns the device to read mode. It is
recommended to reinitiate the Word Program command sequence after the device has completed the
hardware reset operation to insure data integrity.
The Security Sector Region (SSR) mode may also use the Word Programming command when is
entered.
The Word Programming command has a modified version without unlock write cycles when it is used
for programming the Lock Register and IPB MMOs. The same command is also used to change
volatile bits when entered in to the IPB Lock, and DPB MMOs. See the Instruction Definition Tables
for program command sequences.
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Figure 8-1 Word Program Operation
8.6.3
Write Buffer Programming
A 512-byte address range write buffer is used to program data within an aligned 512-byte boundary
Line, (example, addresses: 100h to 1FFh). Hence, a Write Buffer Programming operation must be
setup on a Line boundary. If the Programming operation is less than 512-bytes, it may start on any
word boundary, but may not cross a Write-Buffer-Line boundary. All bit locations in the buffer at the
start of a Write Buffer programming operation are in the One’s state (FFFFh/Word). Thus, any
locations not loaded will retain the existing data.
The Main Memory Array and the Secure Sector Region (SSR) are the areas that are supported by the
Write Buffer Programming operation. It is possible to program from 1 bit, up to 512 bytes in one Write
Buffer Programming operation. The recommended write buffer method is to only write each page
once in a multi-page scenario. Programming should be done in full Lines of 512 bytes setup on 512byte boundaries, for the very best performance.
To initiate a Write Buffer Programming operation, the first 2 cycles are the unlock write commands.
The 3rd write cycle contains the Write to Buffer command with the program targeted Sector Address
(SA). The fourth cycle is to write the number of planned word locations minus 1. This will indicate the
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number of write buffer addresses that are to be loaded with data. This also indicates when to expect
the Program Buffer to flash confirm command. The Write to Buffer command and the Write Word
Count command Sector Addresses must match. In order to program, the sector must be unlocked
(unprotected).
Cycle 5, the starting address / data combination is written. This will be the first address / data pair to
be programmed, and selects the write-buffer-Line address. The operation will abort and return to the
initiating state if the Sector Address does not match the Write to Buffer Sector Address. In the
following cycles, each address / data pairs must be in sequential order and all write buffer addresses
must be within the same Line, otherwise the operation will abort and return to the initiating state.
For each data write operation, the WC counter will decrement and every write is data being loaded
into the write buffer. During the write buffer loading period no commands are accepted. The only way
to stop writing data to the write buffer is to abort the Write to Buffer command. This is done by writing
an invalid address that is outside the Write Buffer Line of the programming operation.
The Program Buffer to Flash command must be issued immediately after the specified number of
write buffer locations has been loaded at the sector address. At this point the program algorithm
starts and the device status will be busy. The Internal Program Algorithm will program and verifies the
data that has been programmed into the selected sector of the Main Memory Array. No control
signals or timing parameters during this internal operation is required. The operation will abort and
return to the initiating state anytime an incorrect number of write buffer locations have been loaded.
The abort occurs because anything other than the expect Program Buffer to Flash command
happened at the end of the word count.
The write-buffer internal programming operation can be suspended using the Program Suspend
command. When the Internal Program Algorithm is complete, the Write State Controller then returns
to the Write State Controller standby mode where the programming operation was started.
Under the following conditions the Write Buffer Programming sequence will be aborted:

The Word Count cannot exceed a value greater than the buffer size, which is 255 (256 minus
1).

The Write to Buffer command cannot contain an address that is outside the Line.

After the Write Word Count number of data words is loaded the Program Buffer to Flash
command is not issued
Data Polling Status, reading the Status Register, or monitoring the RY/#BY output can determine the
status of the program operation. An abort of the Write Buffer command will occur immediately after an
invalid condition, and will indicate a Program Fail in the Status Register at Program Status Bit (Bit
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4=1), because of the Write Buffer Abort Status Bit (Bit 3) equals 1. A Clear Status Register command
may be issued to clear the Program Status Bit or the next successful program operation will clear the
failure status bit.
Caution should be taken when stopping the Write Buffer Programming Sequence by the following
methods: Power cycling the device or a Hardware Reset. Using either of these methods may leave
the area being programmed in an unknown state with unstable or invalid data. If this is the case
reprogrammed with the same data or performing an erased to ensure data values are properly
programmed or erased.
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Figure 8-2 Write Buffer Programming Operation with Data Polling Status
Write to Buffer CMD (SA)
Word Count
minus-1, (SA)
Write beginning Add/Data
WC=0?
YES
NO
Write to a different (SA)
YES
Abort Write to Buffer
NO
Write to Buffer Aborted.
Must “Write to Buffer
Abort Reset” to return to
Read mode
Write next Add/Data4
WC=WC - 1
Write Program to Flash
Confirm (SA)
Read DQ[7:0] /w
Add=Last Loaded Add
DQ7=Data?
NO
NO
DQ1=1?
YES
DQ5=1?
NO
YES
YES
Read DQ[7:0] /w
Add=Last Loaded Add
DQ7=Data?
YES
NO
Fail / Abort2
Pass
Notes:
1.
2.
3.
4.
DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
If this flowchart location was reached because DQ5 = 1, then the device FAILED. If this flowchart location was
reached because DQ1 = 1, then the Write Buffer operation was ABORTED. In either case the proper RESET
command must be written to the device to return the device to READ mode. Write-Buffer-Programming-Abort-Rest
if DQ1 = 1, either Software RESET or Write-Buffer-Programming-Abort-Reset if DQ5 = 1.
See Instruction Definitions Tables for the command sequence as required for Write Buffer Programming.
When Sector Address is specified, any address in the selected sector is acceptable. However, when loading WriteBuffer address locations with data, all addresses MUST fall within the selected Write-Buffer Page.
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Figure 8-3 Write Buffer Programming Operation with Status Register
Notes:
1.
See Instruction Definitions Tables for the command sequence as required for Write Buffer Programming.
2.
When Sector Address is specified, any address in the selected sector is acceptable. However, when loading WriteBuffer address locations with data, all addresses MUST fall within the selected Write-Buffer Page.
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Table 8-1 Write Buffer Programming Command Sequence
Address
Data
555
AA
Unlock Command 1.
2AA
55
Unlock Command 2.
SA
0025h
SA
WC
Starting
Address
WBL
PD
PD
WBL
PD
SA
0029h
Sequence
Comment
Write to Buffer Command at Sector
Address.
Number of Locations at Sector
Address.
WC = number of words to program
minus 1
WC set to 1 = 2 words to program.
Example
Write Starting Address / Data pair.
Selects Write-Buffer-Page and
loads first Address/Data Pair.
Write next Address / Data pair.
All addresses MUST be within the
selected write-buffer-page
boundaries, and have to be loaded
in sequential order.
Write LAST Address/Data pair.
All addresses MUST be within the
selected write-buffer-page
boundaries, and have to be loaded
in sequential order.
Write Buffer Program Confirm at
Sector Address.
This command MUST follow the
last write buffer location loaded, or
the operation will ABORT.
Device goes busy.
Legend:
SA = Sector Address (Non-Sector Address bits are don't care. Any address within the Sector is sufficient.)
WBL = Write Buffer Location (MUST be within the boundaries of the Write-Buffer-Line specified by the Starting Address.)
WC =Word Count
PD = Program Data
8.7 Program Suspend / Program Resume Commands
An internal programming operation can be interrupted so that data can read from any non-suspended
Boundary Line by using the Program Suspend command. During a programming process and the
Program Suspend command is written, the programming operation will halt within the period of tPSL
and the status bits will be updated. When writing the Program Suspend command addresses are
don't care.
Program Suspend has two commands available; The Erase/Program suspend command (B0h
command code), which is a combined legacy command. The Program Suspend command (51h
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command code). Program resume also has two possible commands; The Erase / Program resume
command (30h command code) legacy combined command. Program Resume command (50h
command code). It is recommended not to use the combine Erase/Program suspend or the combined
Erase/Program resume commands for programming and for the erase suspend and resume use the
legacy combined commands.
After suspending the programming operation, any non-suspended Line of array data can be read. If
during an Erase Suspended operation to start a Programming operation that was suspended, only
addresses not in the Erase or Program Suspend may be read.
The device returns back to program operation and the status bits are updated after the Program
Resume command is executed. Monitoring the Status Register or using the Data Polling method, the
programming operation status can be determined.
During Program Suspend, valid accesses and commands:

Any non-erase suspended sector can be Read

Any non-program suspended Line can be Read.

Status Read command

Exit MMO or Command Set Exit

Program Resume command
Program Resume command must be executed to exit the Program Suspend mode to continue the
programming operation. Resume commands are ignored once the device has returned to the
programming operation. After the device has resumed programming operation a Program Suspend
command can be re-written.
Programming operations can be interrupted as often as necessary but, the minimum requirement
between a Program Resume and the next Program Suspend must be greater than or equal to tPRS.
Not supported is Program suspend and resume mode while entered in an MMO. Likewise, there is no
support while in program suspend to enter into MMO.
8.8 Erase Methods
8.8.1
Chip Erase
The entire Main Memory Array is erased by chip erase function. The Internal Erase Algorithm will first
program and verifies the entire memory prior to an electrical erase. All locations within the device will
contain FFFFh after a successful chip erase. There is no need to provide any control signals or timing
parameters during this operation. Initiating the chip erase command sequence requires writing two
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unlock cycles, the a setup command cycle, two additional unlock write cycles and then the chip erase
command, which in turn actives the Internal Erase Algorithm.
While the Internal Erase operation is in progress, no data can be read from the device. Chip Erase
operation status can be determined by reading the Status Register or using Data Polling. Only a
Status Read, Hardware RESET or Power cycle are valid, once the chip erase operation has begun,
ignoring all other commands. When the Internal Erase Algorithm has finished, the Write State
Controller will return to the standby mode. However, in the case of a Hardware Reset or Power Cycle,
the erase operation immediately terminates and returns to read mode after a period of tRPH. In the
event the chip erase operation is terminated and to insure the integrity of the device data, the chip
erase command sequence should be reinitiated once the device has returned to an idle state.
If a sector is protected during chip erase, the Internal Erase Algorithm will ignore the protected sector
and move on to the next sector erase.
8.8.2
Sector Erase
The sector erase function erases a selected 128-kbyte sector in the main memory array. The Internal
Erase Algorithm programs and verifies the select sector prior to an electrical erase. There are no
requirements for any control signals or timing parameters during this internal operation. All locations
within the erased sector will contain an FFFFh pattern, indicating a successful sector erase. If the
sector has been protected, the sector will not be erased. Reading the Status Register or using Data
Polling can be used to determine the status of the erase operation. It takes six cycles to perform a
sector erase command sequence; writing two unlock cycles, followed by a setup command, writing
two more unlock cycles, and the sector erase command that contains the address of the desired
sector to be erased.
The Status Register Read and Erase Suspend commands are the only valid commands that can be
used after the sector erase operation has commenced, ignoring all other commands. The sector
erase operation and be terminated abruptly by a hardware reset at which time the device returns to
read mode after a period tRPH. If this is the case, the sector erase command procedure must be
redone again once the device has completed the reset operation to ensure integrity of the data.
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Figure 8-4 Sector Erase operation
8.9 Erase Suspend / Erase Resume
The Erase Suspend command interrupts a sector erase operation making it possible to read data or
program data in the main memory array. The Erase Suspend command is valid when a sector erase
or a program operation is in progress. Executing an Erase Suspend command during a chip erase
operation will be ignored. The device requires a maximum of tESL to suspend the erase operation and
update the status bits any time the Erase Suspend command is executed during the a sector erase
operation.
Once in the erase-suspend mode, the Main Memory Array can be read or programmed. Reading at
any address outside erase-suspended sectors produces valid data. Reading within the suspended
sectors will result in invalid data. Monitoring the Status Register or Data Polling can be used to
determine the status of the device actively performing an erase or erase-suspended function.
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The Write State Controller will return the device back to the erase-suspend mode after a program
operation has completed that was called from the erase suspend mode. The status of the program
operation can be determined by reading the Status Register, the same as in the standard program
operation.
In the event there is a program failure during an Erase Suspend operation, it is necessary to initiate a
Clear or Reset command to return the device to the Erase Suspended mode. Before trying another
program operation on the main memory array, the erase function will need to be resumed and
completed.
During Erase Suspend, valid accesses and commands:

Any other non-suspended sector can be read.

Any other non-suspended sector can be programmed.

Status Read command

Enter DPB MMO

DPB Set

DPB Clear

DPB Status Read

Exit MMO or Command Set Exit

Erase Resume command
To resume the sector erase operation, an Erase Resume command must be executed. The device
will return back to erasing at which point the status bits will be updated. If another Erase Resume is
attempted it will be ignored. Once the device has resumed erase operation another Erase Suspend
command can be initiated.
While entered in an MMO, Erase Suspend and Resume is not supported. Likewise, entry into a MMO
while an erase suspend is not supported.
8.10 Blank Check
To confirm if a selected sector is erased a Blank Check command should be used. Reads to the main
memory array are not supported during a Blank Check operation. Trying to do so will return unknown
data. To execute a Blank Check operation on a specific Sector, write the address (SA)555 and the
data 33h after the Write State Controller is in the standby mode.
If the device is in a programming or erase mode of operation a Blank Check command cannot be
written.
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The Status Register can confirm if the device is still busy and when it has completed the Blank Check
operation, whether or not the sector is blank. Bit 7, Device Ready Bit of the Status Register will show
if a Blank Check is being performed by the device. Bit 5, Erase Status Bit of the Status Register will
indicate an erased sector when reading a ‘0’ or a non erased sector when reading a ‘1’. The device
will immediately halt the Blank Check operation and update the status as soon as any bit in the
selected sector is found not to be erased.
The Write State Controller will return to the Standby mode, as soon as the Blank Check is completed.
8.11 Enhanced Sector Protection Methods
8.11.1 Enhanced Sector Protection (ESP)
Enhanced Sector Protection is a method used to enable or disable program and erase operations, in
any or all sectors. Described in the section are the various methods of protecting data stored in the
main memory array. An outline of these methods is shown in the following figure.
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Figure 8-5 Enhanced Sector Protection IPB Program Algorithm
Start
Individual Protection
Mode
(Default)
IPB=0
Set IPB
Lock Bit
IPB lock Bit locked
All IPB not changeable
IPB=1
IPB Lock bit Unlocked
IPB is Changeable
Dynamic Write Protect bit
(DPB)
Sector Array
DPB=0 Sector Protect
DPB=1 Sector Unprotect
Individual Protect bit
(IPB)
IPB=0 Sector Protect
IPB=1 Sector Unprotect
DPB 0
SA 0
IPB 0
DPB 1
SA 1
IPB 1
DPB 2
SA 2
IPB 2
.
.
.
.
.
.
.
.
.
.
.
.
DPB + n
SA + n
IPB + n
Each sector has a non-volatile Individual Protection Bit (IPB) and a volatile Dynamic Protection Bit
(DPB) associated with it. If in either case the bit is 0, the sector becomes protected from both
program and erase operations.
Program and erase of the IPB bits are protected when the IPB Lock bit is 0.
The Individual Protection mode (default) clears the IPB Lock to a 1 during a Power Up Reset or
Hardware Reset. This is done so that the IPB bits are unprotected after device reset. When needed
there is a IPB Lock bit command to write the volatile IPB Lock bit to a 0 to protect the all the IPB.
There is no command in the Individual Protection mode to clear the IPB Lock bit to 1 after it is
programmed to 0, except for the Power Up Reset or Hardware resets.
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The selection of the Individual Protection mode is set at the factory by programming OTP bit in the
Lock Register.
When shipped from Winbond, all the sector IPB bits are erased so that all main memory array sectors
are unprotected.
8.11.2 IPB Lock
This one per device volatile Individual Protection Bit Lock is a bit that will protect all IPB bits. When
programmed to 0, it locks all sector IPBs and if the bit is 1, it allows the all sector IPBs to be changed.
Only after the sector IPBs are configured to the desired state should the IPB Lock bit be programmed
to 0. Note the IPB Lock command can only program the bit to 0.
To erase the IPB Lock bit, only a Power Up Reset or a hardware reset will restore the value to 1 to
allow sector IPB bits to be changed. There is no software command operation that can clear the IPB
Lock to a 1.
8.11.3 Individual Protection Bits (IPB)
The non-volatile Individual Protection Bits (IPB) is located in a separate non-volatile flash array. There
is one IPB bit assigned to each sector. When an IPB is 0 their corresponding sectors is protected
from program and erase operations. The IPB can be programmed individually, but are erased as a
group. Important to note, the Write State Controller takes care of the preprogramming and verification
prior to erasure.
When programming an IPB bit the typical word programming time is required. To monitor the
operation status of an IPB bit programming or erase, DQ6 Toggle Bit I of the Data Polling Status will
toggle until the operation is complete. Note; typical sector erase time is required to erasing all the
IPBs.
Program or erase command will not execute and will time-out, if the IPB Lock is equal 0, without
programming or erasing the IPB.
The IPB Status Read command can be used to check the protection state of an IPB for a given
sector, but you must first enter the IPB MMO mode. See Instruction Definition Tables.
8.11.4 Dynamic Protection Bits (DPB)
The volatile Dynamic Protection Bits are exclusive for each sector and can be individually changed.
Only sectors that have their IPBs clear to 1 (unprotected) can the DPBs control. By issuing the DPB
Set or Clear command sequences, the DPB are clear to 1 or set to 0, thus placing each sector in the
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unprotected or protected state respectively. The DPB can be set to 0 or cleared to 1 as often as
needed.
8.11.5 Sector Protection Bit Status Summary
Sector Protection status base on IPB, DPB and IPB Lock bit weight is as follows:
Table 8-2 Sector Protection Status
Sector Protection Bit Status
Sector Status
Unprotected:
Protected :
Protected:
Protected:
Unprotected:
Protected:
Protected:
Protected:
IPB and DPB are changeable
IPB and DPB are changeable
IPB and DPB are changeable
IPB and DPB are changeable
DPB is changeable
DPB is changeable
DPB is changeable
DPB is changeable
IPB Lock
IPB
DPB
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
8.11.6 Lock Register
The Lock Register is a non-volatile One Time Programmable (OTP) register where the bits control
protection of the SSR, and the default Individual Protection Mode, programmed at the factory.
The Security Sector Region (SSR) protection bits are OTP and once programmed (locked); there is
no command for unlocking the protected portion of the Security Sector Region. At this point no
program or erase operations are allow in the SSR.
The Lock Register programming time is typically the same as word programming. Monitoring Data
polling Status DQ6 Toggle Bit I during a Lock Register programming Internal Algorithm will toggle
until the operation is finished. Another method to monitor the programming status of the Lock
Register can be done reading the Status Register’s bit 4 and 7. See Status Register Operations for
information on these status bits.
The Reserved Bits must be 1 (masked), when programming the Lock Register Bits.
Table 8-3 Lock Register
Name
Bit
15-9
8
7
6
5
Reserved
Reserved
Reserved
SSR Customer Lock Bit
Reserved
Default Value
1
0
X
1
1
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Reserved
Reserved
Reserved
Individual Protection Mode (Factory Locked)
SSR Factory Lock Bit
4
3
2
1
0
1
1
1
0
0
8.12 Security Sector Region
The Security Sector Region (SSR) MMO provides an extra flash memory area that can be
programmed once and permanently protected from further changes. The SSR is 1024 bytes in length.
It consists of two 512 bytes regions, Factory Locked Security Sector Region and 512 bytes for
Customer Locked Security Sector Region.
The Secure Silicon Entry command sequence contains the sector address; this will overlay the
Security Sector Region address map on the Main Memory Array selected sector. The overlay starts at
location 0 in the selected sector. While the SSR MMO is entered the contents of locations exceeding
the maximum SSR MMO address of that sector are consider as undefined data.
Table 8-4 Security Sector Region
Word Address Range
Content
Size
(SA) + 0000h to 00FFh
Factory Locked Security Sector Region
512 bytes
(SA) + 0100h to 01FFh
Customer Locked Security Sector Region
512 bytes
(SA) + 0200h to FFFFh
Undefined
127 Kbytes
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8.13 Monitoring Device Status
Status Register, Data Polling and the Ready/Busy# (RY/#BY) Signal are the three methods for
monitoring Internal Algorithms status.
8.13.1 Status Register
The Status Register MMO is a 16-bit register that provides status of program and erase operations.
The Status Register Read command is a two cycle command. First cycle overlays the contents of the
status register in all locations of the device address space. The second cycle reads the information
contents of the status register. The Status Register MMO is exited automatically after the read
access.
After the status register read access, #CE or #OE must go HIGH for a period of tCEPH or tOEPH,
respectively to return to the active address space at the time the initial Status Register Read
command was executed.
Some of the Status Register bits are associated to the results indicating success / failure of the most
recently completed Internal Algorithm, while remaining bits are for current status of an Internal
Algorithm that is in progress, suspended or has completed.
The upper 8 bits DQ[15:8] are reserved. They are undefined bits that should be treated as don't care
and ignored. The Clear Status Register Command will turn results related bits to 0, but will not affect
the current state bits.
Table 8-5 Status Register
Bit #
Bit Description
15:8 Reserved
7 Device Ready Bit
Erase Suspend
6
Status Bit
Reset
Status
X
1
Busy
Status
Invalid
0
0
Invalid
5
Erase Status Bit
0
Invalid
4
Program Status Bit
0
Invalid
0
Invalid
0
Invalid
0
Invalid
0
Invalid
3
2
1
0
Write Buffer Abort
Status Bit
Program Suspend
Status Bit
Sector Lock Status
Bit
Reserved
Read Status
X
1
Erase not Suspended=0
Erase is Suspended=1
Erase successful=0
Erase fail=1
Program successful=0
Program fail=1
Program not aborted=0
Program aborted during Write to Buffer command=1
No Program in suspension=0
Program in suspension=1
Sector not locked during operation=0
Sector locked error=1
X
Notes:
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1. DQ 7 is ‘1’ when there is no Internal Algorithm in progress in the device. 2. DQ[6:1] are valid only if
DQ7 is ‘1’. 3. All bits are put in their reset status by Power-up reset or Hardware reset. 4. DQ[5:3, 1] is
cleared to 0 by the Clear Status Register command or Reset command. 5. Upon issuing the Erase
Suspend Command, the user must continue to read status until DQ7=1. 6. DQ6=0 by the Erase
Resume Command. 7. DQ5 indicates either a success or failure of the most recent erase operation.
8. DQ4 indicates a success or failure of the most recent program operation. 9. During erase suspend,
programming to the suspended sector, will cause program failure and set the DQ4=1. 10. Upon
issuing the Program Suspend Command, the user must continue to read status until DQ7=1. 11.
DQ2=0 by the Program Resume Command. 12. DQ1 indicates the status of the most recent program
or erase operation that a program or erase and if the operation failed because the sector was locked.
8.13.2 Data Polling Status
During an active Internal Algorithm the Write State Controller switches to the Data Polling MMO to
display Internal Algorithms status to any read access. A single word (2-Bytes) of status information is
available in all locations of the device address space. In the status word there are several bits to
determine the status of an Internal Algorithms. These are the DQ bits as they appear on the I/O data
bus during a read access while an Internal Algorithms is in progress. The upper byte (DQ[15:8]),
DQ4, and DQ0 are reserved and are undefined data and should be treated as don't care. See Data
Polling Status Table.
8.13.2.1
Data# Polling (DQ7)
I/O pin DQ7 is the Data# Polling bit that indicates whether the device has an Internal Algorithm in
progress or has completed. Data# Polling becomes valid on DQ7 on the last rising edge of #WE after
a Program or Erase command sequence. During a Write Buffer Programming operation, the final
word being programmed in the write buffer-page is the only time Data# Polling is valid. Polling Status
is undefined at any other location.
The device outputs complement of the data on DQ7 during an Internal Program algorithm. The same
applies during Erase Suspend mode while a programming operation is in effect. The device outputs
the programmed data bit to DQ7 of the last word programmed after the Internal Program algorithm
has complete. Note the device allows only reading array data during a Program Suspend. A program
address falling in a protected sector will cause Data# Polling on DQ7 to be active for approximately
20 μs, at which time the device returns to reading the Main Memory array.
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During the Internal Erase or blank check algorithms, Data# Polling produces a 0 on DQ7. When the
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1
on DQ7. This is similar to the complement data polling output described for the Internal Program
algorithm. Addresses must be within the sector selected for erase to read valid status on DQ7.
If the sector selected for erasing is protected and an erase command sequence is written, DQ7,
Data# Polling is active for approx. 100 μs, then the device returns to reading the Main Memory array.
When DQ7 has changed from the complement to true data, valid data can be read on DQ[15:0] on
the next read cycles. This is because DQ7 may change independently with DQ[6:0] while Output
Enable (#OE) is held LOW. See Data# Polling (During Embedded Algorithms) Figure or Data Polling
Status Table these shows the outputs for DQ7, Data# polling. Figure for Write Buffer Programming
Operation with Data Polling Status shows the Data# polling.
DQ7 Data# Polling status may only be read:

At the address of the last word loaded into the Write Buffer for a Write Buffer programming operation;

The location of a single word programming operation.

A location in a sector being erased or blank checked.
Figure 8-6 Data# Polling Algorithm
Note:
DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
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8.13.2.2
DQ6: Toggle Bit I
Data IO Pin, DQ6 (Toggle Bit I), when monitored can indicate if there is an Internal Program or Erase
algorithm in progress or has completed. It also can indicate whether the device is in a Program or
Erase Suspended mode. Toggle Bit I, is valid and can be read at any address after the rising edge of
the last #WE pulse in a program or erase operation command sequence. Successive read cycles to
any address during an internal program or erase algorithm operation will cause DQ6 to toggle. DQ6
stops toggling when either the program or erase operation has complete.
After the execution of an erase command sequence and that selected sector is protected, DQ6 will
toggle for about 100μs at which time the Write State Controller returns to the standby mode.
Data IO Pins DQ6 and DQ2 together can determine whether a sector is actively erasing or erasesuspended. When the device has an internal erase algorithm in progress, DQ6 will toggle. If the
device enters a Program Suspend or Erase Suspend mode, DQ6 will stop toggling. To determine
which sectors are erasing or erase suspended, DQ2 must also be monitored. Alternative to this, DQ7
can be used (see DQ7: Data# Polling).
During the Erase Suspend Program mode DQ6 also toggles and once the internal program algorithm
has finished, DQ6 will stop toggling.
Refer to the Data Polling Status Table, Toggle Bit Program flowchart, DQ2: Toggle II section,
Reading Toggle Bits DQ6/DQ2 section and the Toggle Bit Timing Diagrams for more information.
8.13.2.3
DQ3: Sector Erase Timer
To determine whether or not a sector erase has begun after a sector erase command sequence, DQ3
may be monitored. Refer to Sector Section for more details.
After the sector erase command has been entered, it is recommended to read the status of DQ7
(Data# Polling) or DQ6 (Toggle Bit I) to determine that the device has received the command
sequence, followed by reading DQ3. If Internal Erase algorithm has begun, then DQ3 should have a
value of 1. Refer Data Polling Status Table for more information.
8.13.2.4
DQ2: Toggle Bit II
Data IO Pin, DQ2 (Toggle Bit II) when accompanied with DQ6 (Toggle Bit I), monitors whether the
selected sector is actively performing an Internal Erase algorithm or if the sector is erase-suspended.
Toggle Bit II status becomes valid after the command sequence and the final rising edge of #WE
pulse.
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DQ2 toggles when read at addresses within the selected sector that which the erase algorithm was
started. Use either #OE or #CE to control the read cycles. Monitoring just DQ2 is not enough to tell
whether the sector is currently erasing or is in an erase-suspended state. By comparing DQ6 which
indicates if the device is currently erasing, or is in an Erase Suspend state, but is not capable of
distinguishing the selected sector for erase. So, to discern the correct sector and mode of operation,
both status bits is required.
Refer to the Data Polling Status Table, Toggle Bit Program flowchart, DQ2: Toggle II section,
Reading Toggle Bits DQ6/DQ2 section and the Toggle Bit waveform figure for more information.
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8.13.2.5
Toggle Bits DQ6/DQ2
In order to discern Toggle bit status, DQ7-DQ0 must be read at least twice in a row to determine if a
toggle bit is actually toggling. If it is determined that the toggle bit has stopped toggling, this would
indicate that the device has either completed the program or erase operation. This being the case, on
the next read cycle array data on DQ15-DQ0 can be read.
If it is determines that the toggle bit is still toggling, then DQ5 (Exceeded Timing Limits) should be
read to see if the current operation has exceeded its timed limit (DQ5=1). If the value of DQ5 is ‘1’
then another read of the toggle bit should be done in case DQ5 went high at the same time the toggle
bit stop toggling. A successful completion of a program or erase operation is indicated by the toggle
bit has stopped toggling. If the toggle bit is toggling, the operation did not complete successfully and
then must issue the reset command to return to reading array data.
Refer to Toggle Bit Program Figure.
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Figure 8-7 Toggle Bit Program
Notes:
1.
Read toggle bit twice to determine whether or not it is toggling. See text.
2.
Recheck toggle bit because it may stop toggling as DQ5 changes to 1. See text.
8.13.2.6
DQ5: Exceeded Timing Limits
There is in place a specified internal pulse count for program or erase operations that when
exceeded, DQ5 value will be equal to ‘1’. This is considered a fail for a program or erase operation
that has not completed successfully. In this situation, a reset command must be executed to return
back to a read array mode. It is possible that the device will continue to indicate busy for up to 2 μs
following the reset command.
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DQ1: Write-to-Buffer Abort
8.13.2.7
Write-to-Buffer operation was aborted if DQ1 equals ‘1’. If this happens, a Write-to-Buffer-Abort-Reset
command sequence must be executed to bring the Write State Controller to standby and clear the
Status Register failed bits. For more details, see Write Buffer Programming section.
Table 8-6 Data Polling Status
DQ72
DQ6
DQ51
DQ3
DQ22
DQ14
RY/#BY
DQ7#
Toggle
0
N/A
No Toggle
0
0
Reading within Erasing
Sector
0
Toggle
0
1
Toggle
N/A
0
Reading Outside erasing
Sector
0
Toggle
0
1
No Toggle
N/A
0
Operation
Internal Program Algorithm
Standard
Mode
Program
Suspend
Mode3
Reading within Program
Suspended Sector
Reading within Non-Program
Suspended Sector
INVALID (Not INVALID (Not INVALID (Not INVALID (Not INVALID (Not INVALID (Not
Allowed)
Allowed)
Allowed)
Allowed)
Allowed)
Allowed)
Data
Data
Data
Data
Data
Data
1
1
No Toggle
0
N/A
Toggle
N/A
1
Reading within Non-Erase
Suspend Sector
Data
Data
Data
Data
Data
Data
1
Programming within NonErase Suspended Sector
DQ7#
Toggle
0
N/A
N/A
N/A
0
BUSY State
DQ7#
Toggle
0
N/A
N/A
0
0
Exceeded Timing Limits
DQ7#
Toggle
1
N/A
N/A
0
0
ABORT State
DQ7#
Toggle
0
N/A
N/A
1
0
Reading within Erase
Suspended Sector
Erase
Suspend
Mode
Write-toBuffer4
1
Notes:
1.
DQ5 switches to '1' when an Internal Program or Internal Erase operation has exceeded the maximum timing limits.
See DQ5: Exceeded Timing Limits for more information.
2.
DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3.
Data are invalid for addresses in a Program Suspended Line.
4.
DQ1 indicates the Write-to-Buffer ABORT status during Write-Buffer-Programming operations.
8.14 Enhanced Variable I/O
The Data I/O maximum drive and receive voltages are determined by the EVIO supply. This feature
allows the device IO pins to be compatible with signal buses that have different voltage levels than
the core device voltage.
8.15 Ready/#Busy
The Ready/#Busy (RY/#BY) is a dedicated output pin that indicates whether a Hardware Reset, a
Power Up Reset, or an internal algorithm operation is in progress or has finished. A valid output from
the RY/#BY is after the falling edge of #RESET, VCC is higher than VCC minimum during Power Up
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Reset or after the rising edge of the final #WE pulse during a command sequence. The RY/#BY pin is
an open drain output that should have a pull up resistor tied to EVIO.
While the Ready/#Busy output is HIGH (Ready), the device is capable of reading data in the Read,
Erase Suspend, or in standby modes. When the device is actively performing an erase, program, or
reset operation, the RY/#BY output is LOW (Busy), including in an Erase Suspend Programming
mode.
A reset command needs to be executed and Status Register bits 4 and 5 need to be cleared if a
program or erase operation failed as a result of a timeout or a locked sector leaving the RY/#BY in a
LOW state (busy).
Refer to the Data Polling Status Table for Ready/#Busy output status.
8.16 Hardware Data Protection Options
8.16.1 Write Protect (#WP)
The lowest or highest sector is protected from program or erase operations while Write Protect (#WP)
equals VIL, independent of the Enhanced Sector Protection (ESP) configuration. Consequently, if
#WP equals VIH, the lowest or highest address sector is not protected by the #WP. The Wrote Protect
pin has an internal pull-up circuit so the default is at VIH. It is important to note the High or low sector
protection depends on the device ordering option.
8.16.2 Write Pulse “Glitch” Protection
Glitch pulses of less than 5 ns on the #WE pin will not initiate a write cycle.
8.16.3 Power Up Write Inhibit
During Power Up Reset, #RESET, #CE, #WE, and #OE are ignored. The device is unable to be
selected, commands are not accepted on the rising edge of #WE, and will not drive outputs during a
Power Up Reset. During a Power-up Reset the Command State Machine (CSM) and Write State
Controller are reset to their standby modes, ready for reading array data. Before the end of Power Up
Reset (tVCS), #CE or #OE must go to VIH.
8.16.4 Logical Inhibit
Write cycles are prevented by holding #OE at VIL, or #CE at VIH, or #WE at VIH. To start a write cycle,
#CE and #WE must be equal to VIL while #OE is equal to VIH.
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8.17 Inherent Data Protection
8.17.1 Command Protection
Internal Algorithms are started by writing command sequences into the Write State Controller
command memory. The command memory array is not readable from the bus interface and has no
memory map overlay. Each bus interface write is a command or a segment of a command sequence
to the device. The Write State Controller analyses the address and data in each write transfer to
decide whether the write is part of a legitimate command sequence. When a correct command
sequence is finished the Write State Controller will start the appropriate Internal Algorithm.
Writing an incorrect command sequence, can most likely result in the Write State Controller returning
to its Standby mode. However, there is a possibility that an improper command sequence may cause
the device to go into an unknown state, in that case a reset command must be executed or possibly a
hardware reset, to return the Write State Controller to its Standby mode.
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8.18 Operating Modes and Signal States Table
Table 8-7 Interface Conditions
≥ VCC
min
EVIO
≥ EVIO min ≤
VCC
≥ EVIO
min
VIL
VIL
VIH
VIH
A[23:4]
Valid
A[3:0]
Modified
#CE
#OE
#WE
#RESET
A[23:0]
DQ[15:0]
Valid Output
Automatic
Sleep1,2
VIL
X
X
VIH
≥ VCC
min
≥ EVIO
min ≤
VCC
VIH
X
X
VIH
≥ VCC
min
≥ EVIO
min ≤
VCC
X
X
X
VIL
≥ VCC
min
≥ EVIO
min ≤
VCC
X
X
X
X
Valid
Valid
X
X
X
Valid
Input
Available
Output
HI-Z
HI-Z
HI-Z
Write
VIL
VIL
VIH
VIH
≥ VCC
min
≥ EVIO
min ≤
VCC
VIL
VIH
VIH
VIH
≥ VCC
min
≥ EVIO
min ≤
VCC
VIL
VIH
VIL
VIH
Valid
Valid
Valid
Output
HI-Z
≥ VCC min
≥ EVIO min ≤
VCC
Standby
Power Up
Reset
≥ VCC min
Hardware
Reset
VCC
Read
without
Disabled3
Signal
Random
Read
Page Read
Mode
This table describes the required condition of each interface signal for each operating mode.
Legend:
X = Don’t Care
Valid = all bus signals have stable L or H level
Modified = valid state different from a previous valid state
Available = read data is internally stored with output driver controlled by #OE
Notes:
1.
#WE and #OE cannot be at VIL at the same time.
2.
Read with Output Disable is a read initiated with #OE HIGH.
3.
Automatic Sleep is a read/write operation where data has been driven on the bus for an extended period, without
#CE going HIGH and the device internal logic has gone into standby mode to conserve power.
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8.19 Instruction Definition Tables
Table 8-8 Read, Write, Program and Erase Definitions
Command Sequence1
Read6
Reset/MMO
Cycles
Read, Write, Program and Erase Definitions
Bus Cycles2-5
1
2
3
4
5
6
7
Add Data Add Data Add Data Add Data Add Data Add Data Add Data
1 RA RD
Exit7,14
1 XXX F0
Status Register Read
2 555
70 XXX RD
Status Register Clear
1 555
71
Word Program
4 555 AA 2AA 55 555 A0 PA PD
Write to Buffer
6 555 AA 2AA 55 SA 25 SA WC WBL PD
Program Buffer to Flash
(confirm)
1
Write-to-Buffer-Abort
Reset11
3 555 AA 2AA 55 555 F0
Chip Erase
Sector Erase
WBL
PD
6 555 AA 2AA 55 555 80 555 AA 2AA 55
555
10
6 555 AA 2AA 55 555 80 555 AA 2AA 55
SA
30
SA
29
Erase Suspend/Program
Suspend Legacy
1 XXX B0
Method9
Erase Resume/Program
Resume Legacy
Method10
1 XXX 30
Program Suspend
Enhanced Method
1 XXX 51
Program Resume
Enhanced Method
1 XXX 50
Blank Check
1
(SA)
33
555
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Table 8-9 CFI-ID (Autoselect) Definitions
Command Sequence1
Cycles
CFI-ID (Autoselect) Definitions
Bus Cycles2-5
1
2
3
4
5
6
7
Add Data Add Data Add Data Add Data Add Data Add Data Add Data
ID (Autoselect) Entry
3 555 AA 2AA 55
CFI Enter8
1
CFI-ID Read
1 XXX RD
Reset/MMO Exit7,14
1 XXX F0
(SA)
90
555
(SA)
98
55
Table 8-10 Security Sector Region Command Definitions
Command Sequence1
Cycles
Security Sector Region Command Definitions
Bus Cycles2-5
1
2
3
4
5
(SA)
88
555
3 555 AA 2AA 55
Read6
1 RA RD
Word Program
4 555 AA 2AA 55 555 A0 PA PD
Write to Buffer
6 555 AA 2AA 55
Program Buffer to Flash
1 SA
(confirm)
SA
25
SA WC WBL PD WBL PD
29
Write-to-Buffer-Abort
Reset11
3 555 AA 2AA 55 555 F0
SSR Exit11
4 555 AA 2AA 55 555 90
Reset/MMO
7
Add Data Add Data Add Data Add Data Add Data Add Data Add Data
SSR Entry
Exit7,14
6
XX
0
1 XXX F0
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Table 8-11 Lock Register Command Set Definitions
Command Sequence1
Cycles
Lock Register Command Set Definitions
Bus Cycles2-5
1
2
3
4
5
6
7
Add Data Add Data Add Data Add Data Add Data Add Data Add Data
Lock Register Entry
3 555 AA 2AA 55 555 40
Program13
2 XXX A0 XXX PD
Read13
1
Command Set Exit12,14
2 XXX 90 XXX
Reset/MMO Exit7,14
1 XXX F0
0
RD
0
Table 8-12 IPB Non-Volatile Sector Protection Command Set Definitions
Command
Sequence1
IPB Entry
IPB
Cycles
IPB Non-Volatile Sector Protection Command Set Definitions
Bus Cycles2-5
1
2
3
5
6
Add
7
Data
Add Data
3 555 AA 2AA 55 555 C0
Program15
2 XXX A0
SA
0
Erase15
2 XXX 80
0
30
All IPB
4
Add Data Add Data Add Data Add Data Add Data
RD
(0)
IPB Read15
1 SA
Command Set
Exit12,14
2 XXX 90 XXX
Reset/MMO
Exit7,14
1 XXX F0
0
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Table 8-13 Global Non-Volatile Sector Protection Freeze Command Set Definitions
Global Non-Volatile Sector Protection Freeze Command Set Definitions(IPB Lock Bit)
Command Sequence1
Cycles
Bus Cycles2-5
IPB Lock Entry
3 555
AA
2AA 55 555 50
2 XXX
A0
XXX
0
XXX
0
IPB Lock Bit Cleared
Read15
IPB Lock Status
Command Set
2
3
4
5
6
7
Add Data Add Data Add Data Add Data Add Data Add Data Add Data
1 XXX RD (0)
Exit12,14
Reset/MMO Exit14
1
2 XXX
90
1 XXX F0
Table 8-14 DPB Volatile Sector Protection Command Set Definitions
DPB Volatile Sector Protection Command Set Definitions
Command Sequence1
Cycles
Bus Cycles2-5
Add Data Add Data Add Data Add Data Add Data Add Data Add Data
DPB MMO Entry
3
555
AA
2AA 55 555 E0
DPB Erase15
2 XXX
A0
SA
1
DPB PGM15
2 XXX
A0
SA
0
DPB Status Read15
1
XXX
0
1
Reset/MMO Exit
3
4
5
6
7
SA RD (0)
Command Set Exit12,14 2 XXX
14
2
1 XXX
90
F0
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Legend:
X = Don't care.
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector selected. Address bits A23-A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same Line.
WC = Word Count is the number of write buffer locations to load minus 1.
Notes:
1.
See Interface Condition Table for description of bus operations.
2.
All values are in hexadecimal.
3.
Except for the following, all bus cycles are write cycle: read cycle during Read, ID/CFI Read (Manufacturing ID /
Device ID), Indicator Bits, Security Sector Region Read, SSR Lock Read, and 2nd cycle of Status Register Read.
4.
Data bits DQ15-DQ8 are don't care in command sequences, except for RD, PD, WC and PWD.
5.
Address bits A23-A11 is don't care for unlock and command cycles, unless SA or PA required. (A23 is the Highest
Address pin.).
6.
No unlock or command cycles required when reading array data.
7.
The Reset command is required to return to reading array data when device is in the CFI-ID (Autoselect) mode, or
if DQ5 goes HIGH (while the device is providing status data).
8.
Command is valid when device is ready to read array data or when device is in CFI-ID (Autoselect) mode.
9.
The system can read and program/program suspend in non-erasing sectors, or enter the CFI-ID MMO, when in the
Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
10. The Erase Resume/Program Resume command is valid only during the Erase Suspend/Program Suspend modes.
11. Issue this command sequence to return to READ mode after detecting device is in a Write-to-Buffer-Abort state.
IMPORTANT: the full command sequence is required if resetting out of ABORT.
12. The Exit command returns the device to reading the array.
13. All Lock Register bits are one-time programmable. The program state = 0 and the erase state = 1. Also, the
Individual Protection mode Lock Bit cannot be programmed at the same time or the Lock Register Bits Program
operation aborts and returns the device to read mode. Lock Register bits that are reserved for future uses are
undefined and may be 0’s or 1's.
14. If any of the Entry commands was issued, an Exit command must be issued to reset the device into read mode.
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15. Protected State = 00h, Unprotected State = 01h. The sector address for DPB set, DPB clear, or IPB Program
command may be any location within the sector - the lower order bits of the sector address are don't care.
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8.20 Common Flash Interface and Device ID (CFI-ID)
The Manufacturer ID, Device ID, Sector Protection status, and basic feature information for the device
are available when the Device ID portion of the MMO is read, locations 0h to 0Fh.
The sector protection status can be read by entering the CFI-ID command which contains the sector
address (SA) and location 02h. If another sector protection status is required, it will be necessary to
exit ID MMO and re-enter the CDI-ID command again with the new sector address. Reading location
02h requires an access time of tACC, #CE should go HIGH before the read and to initiate an
asynchronous read access #CE should return LOW again. Page mode read is not support for reading
between location 02h and the other ID locations. However, Page mode read supports reads between
ID locations other than 02h.
Table 8-15 ID (Autoselect) Address Map
Description
Manufacture ID
Device ID
Protection Verification
Indicator Bits
DQ15-DQ08 = 1 (Reserved)
DQ7: Factory Locked Security Sector Region
1 = Locked, 0 = Not Locked
DQ6: Customer Locked Security Sector Region
1 = Locked, 0 = Not Locked
DQ5 = 1 (Reserved)
DQ4 - WP# Protects
0 = lowest address Sector, 1 = highest address Sector
DQ3 - DQ0 = 1 (Reserved)
RFU
Lower Software Bits
Bit 0: Status Register Support
1 = Yes, 0 = No
Bit 1:DQ Polling Support
1 = Yes, 0 = No
Bit 3-2: Command Set Support
11 = reserved
10 = reserved
01 = Reduced Command Set
00 = Classic Command set
Bits 4-15: Reserved = 0
Upper Software Bits
Address
(SA) + 0000h
(SA) + 0001h
(SA) + 0002h
Data
00EFh
227Eh
0000h/0001h
(SA) + 0003h
Same as
description
(SA) + 0004h
(SA) + 0005h
(SA) + 0006h
(SA) + 0007h
(SA) + 0008h
(SA) + 0009h
(SA) + 000Ah
(SA) + 000Bh
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
(SA) + 000Ch
0003h
(SA) + 000Dh
Reserved
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Description
Address
(SA) + 000Eh
(SA) + 000Fh
Device ID
Device ID
Data
2222h
2201h
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Table 8-16 CFI Query Identification String
Description
Query-unique ASII string “QRY”
Primary vendor instruction set and control interface ID
code
Address for primary algorithm extended query table
Alternate vendor instruction set and control interface ID
code
Address for alternate algorithm extended query table
Address
Data
(SA) + 10h
0051h
(SA) + 11h
0052h
(SA) + 12h
0059h
(SA) + 13h
0006h
(SA) + 14h
0000h
(SA) + 15h
0040h
(SA) + 16h
0000h
(SA) + 17h
0000h
(SA) + 18h
0000h
(SA) + 19h
0000h
(SA) + 1Ah
0000h
Table 8-17 CFI System Interface String
Description
Address
Data
VCC supply minimum program/erase voltage
(SA) + 1Bh
0027h
VCC supply maximum program/erase voltage
(SA) + 1Ch
0036h
VPP supply minimum program/erase voltage
(SA) + 1Dh
0000h
VPP supply maximum program/erase voltage
(SA) + 1Eh
0000h
(SA) + 1Fh
0008h
(SA) + 20h
0009h
Typical timeout per individual block erase, 2 ms
(SA) + 21h
0008h
Typical timeout for full chip erase, 2n ms (00h, not support)
(SA) + 22h
0010h
(SA) + 23h
0001h
(SA) + 24h
0002h
(SA) + 25h
0003h
(SA) + 26h
0003h
n
Typical timeout per single word/byte write, 2 µs
n
Typical timeout for maximum-size buffer write, 2 µs (00h, not support)
n
n
Maximum timeout for word/byte write, 2 times typical
n
Maximum timeout for buffer write, 2 times typical
n
Maximum timeout per individual block erase, 2 times typical
n
Maximum timeout for chip erase, 2 times typical (00h, not support)
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Table 8-18 CFI Device Geometry Definition
Description
n
Device size = 2 in number of bytes
Flash device interface description (01=asynchronous x16 only)
Maximum number of bytes in buffer write = 2n (00h, not support)
Number of erase regions within device (01h:uniform, 02h:boot)
Index for Erase Bank Area 1:
[2E,2D] = # of same-size sectors in region 1-1
[30, 2F] = sector size in multiples of 256K-bytes
Index for Erase Bank Area 2
Index for Erase Bank Area 3
Index for Erase Bank Area 4
Address
Data
(SA) + 27h
0019h
(SA) + 28h
0001h
(SA) + 29h
0000h
(SA) + 2Ah
0009h
(SA) + 2Bh
0000h
(SA) + 2Ch
0001h
(SA) + 2Dh
00FFh
(SA) + 2Eh
0000h
(SA) + 2Fh
0000h
(SA) + 30h
0002h
(SA) + 31h
0000h
(SA) + 32h
0000h
(SA) + 33h
0000h
(SA) + 34h
0000h
(SA) + 35h
0000h
(SA) + 36h
0000h
(SA) + 37h
0000h
(SA) + 38h
0000h
(SA) + 39h
0000h
(SA) + 3Ah
0000h
(SA) + 3Bh
0000h
(SA) + 3Ch
0000h
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Table 8-19 CFI Primary Vendor-Specific Extended Query
Description
Address
Data
(SA) + 40h 0050h
Query - Primary extended table, unique ASCII string, PRI
(SA) + 41h 0052h
(SA) + 42h 0049h
Major version number, ASCII
(SA) + 43h 0031h
Minor version number, ASCII
(SA) + 44h 0035h
Unlock recognizes address
(SA) + 45h 001Ch
Erase suspend (2= to both read and program)
(SA) + 46h 0002h
Sector protect (N= # of sectors/group)
(SA) + 47h 0001h
Temporary sector unprotect (1=supported)
(SA) + 48h 0000h
Sector protect/Chip unprotect scheme
(SA) + 49h 0008h
Simultaneous R/W operation (0=not supported)
(SA) + 4Ah 0000h
Burst mode (0=not supported)
(SA) + 4Bh 0000h
Page mode (0=not supported, 01 = 4 word page, 02 = 8 word page)
(SA) + 4Ch 0003h
Minimum ACC(acceleration) supply (0= not supported), [D7:D4] for volt, [D3:D0]
for 100mV
(SA) + 4Dh 0000h
Maximum ACC(acceleration) supply (0= not supported), [D7:D4] for volt, [D3:D0]
(SA) + 4Eh 0000h
for 100mV
WP# Protection
04=Uniform sectors bottom WP# protect
05=Uniform sectors top WP# protect
(SA) + 4Fh 00xxh
Program Suspend (0=not supported, 1=supported)
(SA) + 50h 0001h
Unlock Bypass (0=Not supported, 1=supported)
(SA) + 51h 0000h
Secured Silicon Sector (Customer OTP Area) Size 2N (bytes)
(SA) + 52h 0009h
Software Features
bit 0: status register polling (1 = supported, 0 = not supported)
bit 1: DQ polling (1 = supported, 0 = not supported)
bit 2: new program suspend/resume commands (1 = supported, 0 = not
supported)
bit 3: word programming (1 = supported, 0 = not supported)
bit 4: bit-field programming (1 = supported, 0 = not supported)
bit 5: autodetect programming (1 = supported, 0 = not supported)
bit 6: RFU
bit 7: multiple writes per Line (1 = supported, 0 = not supported)
(SA) + 53h 008Fh
Page Size = 2N bytes
(SA) + 54h 0005h
N
Erase Suspend Time Maximum <2 (µs)
(SA) + 55h 0006h
Program Suspend Timeout Maximum < 2N (μs)
(SA) + 56h 0006h
Embedded Hardware Reset Timeout Maximum < 2N (μs)
Reset with Reset Pin
(SA) + 78h 0006h
Non-Embedded Hardware Reset Timeout Maximum < 2N (μs)
Power on Reset
(SA) + 79h 0009h
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9 ELECTRICAL SPECIFICATIONS
9.1 Absolute Maximum Ratings
Table 9-1 Absolute Maximum Ratings
PARAMETER
Values
VCC
-0.5V to +4.0V
EVIO
-0.5V to +4.0V
All pins other than
#RESET1
-0.5V to (EVIO + 0.5V)
#RESET1
-0.5V to (VCC + 0.5V)
Output Short Circuit
Current2
100 mA
Storage Temperature Plastic Packages
-65°C to +150°C
Ambient Temperature with Power Applied
-65°C to +125°C
Voltage with Respect to Ground
Notes:
1.
During signal transitions the I/O or input pins can undershoot VSS to a maximum of -2.0V or overshoot to a
maximum of VCC +2.0V for periods of up to 20 ns. See Maximum Negative Overshoot Waveform and Maximum
Positive Overshoot Waveform. Minimum DC voltage on input or I/O pins is -0.5V and the Maximum DC voltage is
VCC +0.5V.
2.
Duration of an output short circuit should not be greater than one second and more than one output may be
shorted to ground at a time.
3.
Permanent damage to the device can be cause by stressing the device above those listed under Absolute
Maximum Ratings. Device reliability may be affected by operating the device at Absolute Maximum Ratings for a
prolonged period of time.
9.1.1
Input Signal Overshoot
Figure 9-1 Max Negative Overshoot Waveform
Figure 9-2 Positive Overshoot Waveform
20ns
20ns
20ns
Vss
Vcc +2.0V
Vss -2.0V
Vcc
20ns
20ns
20ns
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9.2 Operating Ranges
9.2.1
Temperature Ranges
Industrial (I)
Ambient Temperature (TA) -40°C to +85°C
9.2.2
Power Supply Voltages
VCC 2.7V to 3.6V
EVIO 1.65V
to VCC + 200 mV
These voltages ranges are guaranteed in which the devices will functionally operation.
9.2.3
Power Up and Power-Down
VCC must at all times be greater than or equal to EVIO. EVIO must follow the rise and fall of VCC
within 200 mV when EVIO is under the EVIO minimum.
During period of tVCS, which starts the moment that VCC and EVIO both raise above the minimum
VCC and EVIO thresholds and remains stable, the device will perform power on reset operations and
will ignore all inputs until tVCS period has elapsed.
Table 9-2 Power Up/Power-Down Voltage and Timing
Description
VCC and EVIO ≥minimum to first
Duration of VCC ≤
Parameter Min
access1
VRST(min)1
VCC Power Supply
Max
Unit
tVCS
300
μs
tPD
15
μs
VCC
2.7
3.6
V
Notes:
1.
Not 100% tested.
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Figure 9-3 Power-up
Figure 9-4 Power-down and Voltage Drop
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9.3 DC Characteristics
Table 9-3 DC Characteristics
Description
Param
Input Load Current
ILI
Output Leakage Current
ILO
VCC Active Read Current
ICC1
VCC Intra-Page Read
Current
ICC2
VCC Active Erase/Program
Current1,2
ICC3
VCC Standby Current
ICC4
VCC Reset Current2,6
ICC5
Automatic Sleep Mode3
ICC6
VCC Current during power
up2
Input LOW Voltage4
Input HIGH Voltage4
ICC7
Test Conditions
VIN=VSS to VCC, VCC=VCC
max
VOUT=VSS to VCC,
VCC=VCC max
#CE=VIL, #OE=VIH, Address
switching@ 5 MHz, VCC=VCC
max
#CE= VIL, #OE= VIH, Address
switching@ 33 MHz,
VCC=VCC max
#CE= VIL, #OE= VIH,
VCC=VCC max
#CE, #RESET, #OE= VIH,
VIH=EVIO VIL =VSS,
VCC=VCC max
#CE= VIH, #RESET= VIL,
VCC=VCC max
VIH =EVIO, VIL =VSS ,
VCC=VCC max, tACC + 30 ns
#RESET=EVIO, #CE=EVIO,
#OE=EVIO, VCC=VCC max,
VIL
VIH
Output LOW Voltage4,7
VOL
Output HIGH Voltage4
LOW VCC Power on Reset
Voltage2
VOH
Min
Type2
Max
Unit
+0.02
±1.0
μA
+0.02
±1.0
μA
55
60
mA
9
25
mA
45
100
mA
70
100
μA
70
100
uA
3
6
mA
53
80
mA
0.3xEVIO
EVIO+0.4
V
V
-0.5
0.7xEVIO
IOL=100μA for DQ15-DQ0;
IOL=2mA for RY/#BY
IOH=100μA
0.15xEVIO V
0.85xEVIO
VRST
V
0.8
V
Notes:
1.
ICC active, if there is an internal Algorithm in progress.
2.
Not 100% tested.
3.
When addresses remain stable for the specified period of time, Automatic sleep mode will enter the lower power
mode.
4.
EVIO = 1.65V to VCC or 2.7V to VCC.
5.
VCC = 3V and EVIO = 3V or 1.8V. When EVIO is at 1.8V, I/O pins cannot operate at >1.8V.
6.
If an internal operation is in progress at the beginning of a reset, the current consumption will remain at the internal
operation specification until the internal operation is terminated by the reset. If no internal operation is in progress
when reset has begun or following the termination of an internal operation, ICC7 will draw current during what’s left
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of the tRPH period. At the end of the tRPH period, the device transitions to the standby mode until the next read or
write cycle.
7.
The RY/#BY suggested pull-up resistor for the output is 5k to 10k Ohms.
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9.4 Capacitance Characteristics
Table 9-4 Connector Capacitance for FBGA (LFBGA64) Package
Description
Parameter
Test Setup
Typ
Max
Unit
CIN
VIN = 0
8
9
pF
Output Capacitance
COUT
VOUT = 0
5
7
pF
Control Pin Capacitance
CIN2
VIN = 0
4
8
pF
RY/#BY
VOUT = 0
3
4
pF
Input Capacitance
Output Capacitance
Notes:
1.
Sampled, not 100% tested.
2.
Test conditions TA = 25°C, f = 1.0 MHz
Table 9-5 Connector Capacitance for TSOP (TSOP56) Package
Description
Parameter
Test Setup
Typ
Max
Unit
CIN
VIN = 0
7
8
pF
Output Capacitance
COUT
VOUT = 0
5
6
pF
Control Pin Capacitance
CIN2
VIN = 0
3
7
pF
RY/#BY
VOUT = 0
3
4
pF
Input Capacitance
Output Capacitance
Notes:
1.
Sampled, not 100% tested.
2.
Test conditions TA = 25°C, f = 1.0 MHz
Table 9-6 Connector Capacitance for TFBGA (TFBGA56) Package
Description
Input Capacitance
Parameter
Test Setup
Typ
Max
Unit
CIN
VIN = 0
7
8
pF
Output Capacitance
COUT
VOUT = 0
5
6
pF
Control Pin Capacitance
CIN2
VIN = 0
3
7
pF
RY/#BY
VOUT = 0
3
4
pF
Output Capacitance
Notes:
1.
Sampled, not 100% tested.
2.
Test conditions TA = 25°C, f = 1.0 MHz
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10 TIMING SPECIFICATIONS
10.1 AC Test Conditions
Figure 10-1 Device Under Test Setup
Table 10-1 Test Specification
Parameter Description
Output Load Capacitance, CL
Input Rise and Fall
Times1
Input Pulse Levels
All Speeds
Units
30
pF
1.5
ns
0.0-EVIO
V
Input timing measurement reference levels
EVIO/2
V
Output timing measurement reference levels
EVIO/2
V
Note:
1.
Measured between VIL max and VIH min.
Figure 10-2 Input Switching Test Waveforms
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10.2 Power Up Reset and Hardware Reset
Decoupling the VCC and EVIO power supplies are normal precautions that should be taken.
Generally, a suitable capacitor would be on the order of 0.1 μF tied close to the package.
Table 10-2 Power ON and Reset Parameters
Description
Parameter
Limit
Value
Unit
tVCS
Min
300
μs
tVIOS
Min
300
μs
#RESET LOW to #CE LOW
tRPH
Min
35
μs
#RESET Pulse Width
tRP
Min
200
ns
Time between #RESET (HIGH) and #CE (LOW)
tRH
Min
50
ns
#CE Pulse Width HIGH
tCEH
Min
20
ns
VCC Setup Time to first access1,2
EVIO
Setup Time to first access1,2
Notes:
1.
Not 100% tested.
2.
Timing measured from VCC minimum and EVIO minimum to VIH on Reset and VIL on #CE.
3.
#RESET low is possible during Power Up Reset. If RESET is asserted during Power Up Reset, the later period of
tRPH, tVIOS, or tVCS will determine when #CE may go LOW. If #RESET stays LOW after tVIOS, or tVCS is fulfilled, tRPH
is measured from the end of tVIOS, or tVCS. RESET is required also to be HIGH tRH before #CE goes LOW.
4.
During power-up, VCC ≥ (EVIO - 200 mV).
5.
The ramp rate for VCC and EVIO can be non-linear.
6.
tRPH must be  (tRP + tRH).
10.2.1 Power Up Reset
The device will draw ICC7 current during Power-up Reset.
As power supplies voltage ramps up, the EVIO voltage must remain less than or equal to the VCC
voltage. VIH also has to be less than or equal to the EVIO voltage.
The Power-up Reset Internal Algorithm requires a period of tVCS to load all of the Write State
Controller algorithms and default data from non-volatile memory. All control signals including #CE and
#RESET during the Power-up Reset period are ignored. Higher than normal Power Up Reset current
during tVCS may occur if #CE is LOW, but the level of #CE will not influence the Power-up Reset
Internal Algorithms. For a valid read or write operation, #CE or #OE must transition from HIGH to
LOW after the tVCS period. During the period of tVCS, #RESET can be HIGH or LOW. When #RESET
is LOW during the period of tVCS, it may stay LOW at the end of tVCS to keep the device in the
Hardware Reset mode. The device will go to the Standby mode if #RESET is HIGH at the end of tVCS.
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When the power first starts to ramp up and the supply voltage is below VRST, then increases to the
operating level minimum, internal device configuration and Hardware reset operations are initiated.
The #CE signal level is ignored for the period of the Power Up Reset operation (tVCS or tVIOS). Having
#RESET signal LOW during this Power Up Reset period is discretionary. However, if #RESET is
asserted LOW during Power up Reset sequence, it must satisfy the Hardware Reset parameters; tRP
and tRPH. In that case, the Reset operations will be finished at the later of tVCS, tVIOS or tRPH.
Figure 10-3 Power Up Reset
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10.2.2 Hardware Reset
Hardware Reset is initiated by the #RESET signal going to VIL. The device will draw ICC7 current
during Hardware Reset (tRPH). The device draws CMOS standby current (ICC4), if #RESET is
constantly held at VSS, but if #RESET is held at VIL and not VSS, the standby current is higher.
If #RESET is asserted LOW after tVCS and Power-up Reset has not completed, in this case the
Power-up #RESET Internal Algorithms will be performed instead and not Hardware #RESET,
requiring a period of tVCS to complete.
After the device has completed Power Up Reset and entered the Standby mode, any transition to the
Hardware Reset mode will initiate the Hardware Reset Internal Algorithm. A Hardware Reset is
considerably shorter than a Power-up Reset (tRPH) to complete. During the Hardware Reset Internal
Algorithms, any Internal Algorithm in progress will be terminated and the Write State Controller is
returned to its Power Up Reset mode without reloading Write State Controller algorithms from nonvolatile memory. When the Hardware Reset Internal Algorithms finishes, the device will remain in the
Hardware Reset mode, if #RESET stays LOW. If #RESET returns HIGH, the device will go into the
Standby mode. If #RESET is HIGH at the end of the Hardware Reset Internal Algorithms, the device
will go into the Standby mode.
If the Power Up Reset cycle was not properly finished by the end of tVCS period, a transition to the
Hardware Reset mode will only cause a transition to the Power Up Reset mode and initiate the
Power-up Reset Internal Algorithm. This makes sure the device can complete a Power-up Reset
sequence even if some portion of the Power Up voltage ramp-up causes the Power Up Reset to not
initiate or finish properly. During Power-up or Hardware reset, the RY/#BY pin is LOW as an
indicating the device is busy.
Figure 10-4 Hardware Reset
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10.3 AC Characteristics
10.3.1 Internal Algorithm Performance Table
Table 10-3 Internal Algorithm Characteristics
Type2
Max3
Unit
300
2000
ms
10
200
μs
2-byte1
50
200
32-byte1
80
350
64-byte1
110
450
128byte1
170
850
256byte1
280
1400
512-byte
500
3000
512-byte
1
Parameter
Sector Erase Time 128
kbyte5
Single Word Programming
Time1
Buffer Programming Time
Effective Write Buffer Program Operation per Word
Sector Programming Time 128 kB (full Buffer Programming)6
108
Erase Suspend/Erase Resume (tESL)
Program Suspend/Program Resume (tPSL)
Erase Resume to next Erase Suspend
(tERS)7
Program Resume to next Program Suspend
(tPRS)7
Blank Check
μs
μs
192
ms
40
μs
40
μs
100
μs
100
μs
6.2
8.5
ms
Notes:
1.
Not 100% tested.
2.
Program and erase typical times presume the following conditions: 25°C, 3.0V VCC, a random data pattern and
10,000 cycles.
3.
90°C, VCC = 2.70V, 100,000 cycles, and a random data pattern are considered under worst case conditions.
4.
Specifications are based upon a 512-byte write buffer for Effective write buffer operations.
5.
All words are programmed to 0000h before Sector and Chip erasure as part of the pre-programming step of the
Internal Erase algorithm.
6.
System-level overhead is the time required to execute the bus-cycle sequence for the program command.
7.
In order for Program or Erase operations to progress to completion requires the time period to be ≥ typical periods.
However, a minimum of 60 ns is required between Resume and Suspend.
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10.3.2 Asynchronous Read Operations
Table 10-4 Read Operation EVIO = 1.65V to VCC, VCC = 2.7V to 3.6V
Description
Valid Data Output after Address
Read Period Time
Valid data output after #CE Low
Page Access Time
Valid data output after #CE Low
Output Hold time from addresses, #CE or
#OE, Whichever Occurs First
Chip Enable or Output Enable to Output
HIZ1
Read
Output Enable Hold Time1
Toggle and
Data# Polling
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
EVIO=VCC
EVIO=1.65V to VCC
Symbol
VCC=2.7~3.6V
ALT STD Min TYP Max Unit
90 ns
tACC tAA
100 ns
90
ns
tRC
100
ns
90 ns
tCE
100 ns
15 ns
tPACC tPA
25 ns
25 ns
tOE
35 ns
0
ns
tOH
0
ns
15 ns
tDF
20 ns
0
ns
10
ns
tOEH
5
8
Note:
1.
Not 100% tested.
Figure 10-5 Back to Back Read (tACC) Operation
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Figure 10-6 Back to Back Read Operation (tRC)
Note:
A back to back operation, in which #CE remains LOW between accesses, requires an address change to initiate the second access.
Figure 10-7 Page Read
Note:
Word Configuration: Toggle A0, A1, A2, and A3.
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10.3.3 Asynchronous Write Operations
Table 10-5 Write Operations
EVIO =
VCC=2.7~3.6V
Symbols
Description
ALT STD Min Typ Max Unit
1
tWC
60
ns
tAS
0
ns
Address Setup Time to #OE LOW during toggle bit polling
tASO
15
ns
Address Hold Time
tAH
45
ns
Address Hold Time From #CE or #OE HIGH during toggle bit
polling
tAHT
0
ns
Data Setup Time
tDS
30
ns
Data Hold Time
tDH
0
ns
Output Enable HIGH during toggle bit polling or following status
register read.
tOEPH 20
ns
Read Recovery Time Before Write (#OE HIGH to #WE LOW)
tGHWL
0
ns
#CE Setup Time
tCS
0
ns
#CE Hold Time
tCH
0
ns
#WE Pulse Width
tWP
25
ns
#WE Pulse Width HIGH
tWPH
20
ns
Write Cycle Time
Address Setup Time
Note:
1.
Not 100% tested.
Figure 10-8 Back to Back Write Operation
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Figure 10-9 Back to Back (#CE VIL) Write Operation
Figure 10-10 Write to Read (tACC) Operation
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Figure 10-11 Write to Read (tCE) Operation
Figure 10-12 Read to Write (#CE VIL) Operation
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Figure 10-13 Read to Write (#CE Toggle) Operation
Table 10-6 Erase/Program Operations
SYMBOL
Description
ALT
STD
EVIO = VCC=2.7~3.6V
Min
Write Buffer Program Operation (512-byte)
Effective Write Buffer Program Operation per
Typ Max Unit
0.5
Word2, 3
tWHWH15
Program Operation per Word
Sector Erase Operation1
tWHWH2
Erase/Program Valid to RY/#BY Delay
tBUSY
Latency between Read and Write operations4
tSR_W
3
ms
μs
1
10
200
μs
0.3
2
s
80
ns
30
ns
Erase Suspend Latency
tESL
40
μs
Program Suspend Latency
tPSL
40
μs
RY/#BY Recovery Time
tRB
0
μs
Notes:
1.
Not 100% tested.
2.
For one 512bytes programmed.
3.
Effective write buffer specification is based upon a 256-word write buffer operation
4.
Upon the rising edge of #WE, must wait tSR_W before switching to another address.
5.
See Internal Algorithm Characteristics table for specific values
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Figure 10-14 Program Operation
Note:
PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 10-15 Chip/Sector Erase Operation
Note:
SA = sector address (for sector erase), VA = valid address for reading status data.
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Figure 10-16 Data# Polling (During Internal Algorithms)
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read
cycle.
Figure 10-17 Toggle Bit (During Internal Algorithms)
Note:
DQ6 will toggle at any read address while the device is busy. DQ2 will toggle if the address is within the actively erasing sector.
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Figure 10-18 DQ2 vs. DQ6 Comparison Timing
Note:
The system may use #OE or #CE to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erasesuspended sector.
10.3.4 Alternate #CE Controlled Write Operations
Table 10-7 Alternate #CE Controlled Write Operations
SYMBOL
Description
STD
Min
tWC
60
ns
tAS
0
ns
Address Setup Time to #OE LOW during toggle bit polling
tASO
15
ns
Address Hold Time
tAH
45
ns
tAHT
0
ns
Data Setup Time
tDS
30
ns
Data Hold Time
tDH
0
ns
#CE HIGH during toggle bit polling
tCEPH
20
ns
#OE HIGH during toggle bit polling
tOEPH
20
ns
Read Recovery Time Before Write (#OE HIGH to #WE LOW)
tGHEL
0
ns
#WE Setup Time
tWS
0
ns
#WE Hold Time
tWH
0
ns
#CE Pulse Width
tCP
25
ns
#CE Pulse Width HIGH
tCPH
20
ns
Write Cycle
ALT
EVIO = VCC=2.7~3.6V
Time1
Address Setup Time
Address Hold Time From #CE or #OE HIGH during toggle bit
polling
Typ
Max Unit
Note:
1.
Not 100% tested.
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Figure 10-19 Back to Back (#CE) Write Operation
Figure 10-20 (#CE) Write to Read Operation
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11 PACKAGE DIMENSIONS
11.1 TSOP 56-pin 14x20mm
DFigure 11-1 TSOP 56-pin 14x20mm Package
D1
0.10 C
1
56
PIN 1
IDENTIFIER
b
E
e
29
28
BOTTOM EJECTOR PIN
CAVITY # MARK
A A2
R
b
WITH PLATING
L1
A1
c
c1
θ
L
0.80 REF
BASE
METAL
b1
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
L
L1
e
R
θ
Dimension in MM
MIN NOM MAX
1.2
0.05
0.15
0.95
1.00
1.05
0.17
0.22
0.27
0.17
0.20
0.23
0.10
0.21
0.10
0.13
0.16
20.00 BSC
18.40 BSC
14.00 BSC
0.50
0.60
0.70
0.25 BSC
0.5 BSC
0.08
0.35
0°
8°
Dimension Inch
MIN
NOM
MAX
0.047
0.002
0.006
0.037 0.039 0.041
0.007 0.009 0.011
0.007 0.008 0.009
0.004
0.008
0.004 0.005 0.006
0.787 BSC
0.724 BSC
0.551 BSC
0.020 0.024 0.028
0.010 BSC
0.020 BSC
0.003
0.008
0°
8°
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11.2 Thin & Fine-Pitch Ball Grid Array, 56 ball, 7x9mm (TFBGA56)
Figure 11-2 TFBGA-56, 7x9mm package
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11.3 Low-Profile Fine-Pitch Ball Grid Array, 64-ball 11x13mm (LFBA64)
Figure 11-3 LFBGA 64-ball 11x13mm Package
D1
D
0.07 C
(2X)
eD
A
H G F E D C B A
E
8
7
6
5
4
3
2
1
eE
SE
E1
Øb
PIN A1
CORNER
B
TOP VIEW
SD
0.07
(2X)
A A2
PIN A1
CORNER
BOTTOM VIEW
// 0.25 C
A1
C
64X Ø b
Ø 0.20 M C A B
Ø 0.10 M C
SYMBOL
A
A1
A2
D
E
D1
E1
n
Øb
eE
eD
SD/SE
0.15 C
SIDE VIEW
DIMENSION (MM)
MIN
NOM
MAX
1.40
0.40
0.60
13.00 BSC
11.00 BSC
7.00 BSC
7.00 BSC
64
0.5
0.6
0.7
1.00 BSC
1.00 BSC
0.50 BSC
NONE
NOTE
PROFILE
BALL HEIGHT
BODY THICKNESS
BODY SIZE
BODY SIZE
MATRIX FOOTPRINT
MATRIX FOOTPRINT
BALL COUNT
BALL DIAMETER
BALL PITCH
BALL PITCH
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
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12 ORDERING INFORMATION
12.1 Ordering Part Number Definitions
Figure 12-1 Ordering Part Numbering
W 29GL 256 S H 9 T
Winbond Standard Product
W: Winbond
Product Family
29GL: 3V (VCC=2.7~3.6V)
Density
256: 256Mb
Product Version
S: 58nm
Sector Type
H: EVIO=1.65V to VCC (2.7~3.6V), Uniform sector, highest address sector protected
L: EVIO=1.65V to VCC (2.7~3.6V), Uniform sector, lowest address sector protected
Access Time
9: Industrial 90ns
Packages
T: TSOP-56, Green (RoHS Compliant)
B: LFBGA64, Green (RoHS Compliant)
C:TFBGA56, Green (RoHS Compliant)
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Contact Winbond Sales for Secured Sector Lock Options.
3. For more details on Product Version’s Temperature Ranges, contact Winbond.
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12.2 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W29GL256S Parallel Flash Memory.
Please contact Winbond for specific availability by density and package type. Winbond Parallel
memories use a 12-digit Product Number for ordering.
Table 12-1 Valid Part Numbers and Markings
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
TSOP-56
256Mb
W29GL256SH9T
W29GL256SH9T
TSOP-56
256Mb
W29GL256SL9T
W29GL256SL9T
TFBGA56
256Mb
W29GL256SH9C
W29GL256SH9C
TFBGA56
256Mb
W29GL256SL9C
W29GL256SL9C
LFBGA64
256Mb
W29GL256SH9B
W29GL256SH9B
LFBGA64
256Mb
W29GL256SL9B
W29GL256SL9B
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13 HISTORY
Table 13-1 Revision History
VERSION
DATE
PAGE
A
05-07-2013
-
DESCRIPTION
First Release
B
02-21-2014
1. remove TASSB
2. VRST from 1V to 0.8V
3. remove NOP
4. NC Pin change name to RFU/DNU
5. Write performance modified to meet character
data
C
07-02-2014
Modify some TYPO
Trademarks
Winbond is a trademark of Winbond Electronics Corporation. All other marks are the property of their
respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in
systems or equipment intended for surgical implantation, atomic energy control instruments, airplane
or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, or for other applications intended to support or sustain life. Furthermore, Winbond
products are not intended for applications wherein failure of Winbond products could result or lead to
a situation where in personal injury, death or severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their own risk
and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document and
the products and services described herein at any time, without notice.
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