W25Q32BV - Winbond

W25Q32BV
3V 32M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
-1-
Publication Release Date: October 04,2013
Revision I
W25Q32BV
Table of Contents
1.
GENERAL DESCRIPTION ............................................................................................................... 5
2.
FEATURES ....................................................................................................................................... 5
3.
PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 6
4.
3.1
Pin Configuration SOIC / VSOP 208-mil .............................................................................. 6
3.2
Pad Configuration WSON 6x5-mm / 8X6-mm...................................................................... 6
3.3
Pin Configuration PDIP 300-mil............................................................................................ 7
3.4
Pin Description SOIC/VSOP 208-mil, WSON 6x5/8x6-mm and PDIP 300-mil .................... 7
3.5
Pin Configuration SOIC 300-mil ........................................................................................... 8
3.6
Pin Description SOIC 300-mil............................................................................................... 8
3.7
Ball Configuration TFBGA 8x6-mm ...................................................................................... 9
3.8
Ball Description TFBGA 8x6-mm ......................................................................................... 9
PIN DESCRIPTIONS ...................................................................................................................... 10
4.1
Chip Select (/CS) ................................................................................................................ 10
4.2
Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) .................................. 10
4.3
Write Protect (/WP)............................................................................................................. 10
4.4
HOLD (/HOLD) ................................................................................................................... 10
4.5
Serial Clock (CLK) .............................................................................................................. 10
5.
BLOCK DIAGRAM .......................................................................................................................... 11
6.
FUNCTIONAL DESCRIPTIONS ..................................................................................................... 12
6.1
6.2
SPI OPERATIONS ............................................................................................................. 12
6.1.1
Standard SPI Instructions ..................................................................................................... 12
6.1.2
Dual SPI Instructions ............................................................................................................ 12
6.1.3
Quad SPI Instructions .......................................................................................................... 12
6.1.4
Hold Function ....................................................................................................................... 12
WRITE PROTECTION ....................................................................................................... 13
6.2.1
7.
Write Protect Features ......................................................................................................... 13
STATUS REGISTERS AND INSTRUCTIONS ............................................................................... 14
7.1
STATUS REGISTERS........................................................................................................ 14
7.1.1
BUSY Status (BUSY) ........................................................................................................... 14
7.1.2
Write Enable Latch Status (WEL) ......................................................................................... 14
7.1.3
Block Protect Bits (BP2, BP1, BP0) ...................................................................................... 14
7.1.4
Top/Bottom Block Protect Bit (TB)........................................................................................ 14
7.1.5
Sector/Block Protect Bit (SEC) ............................................................................................. 14
7.1.6
Complement Protect Bit (CMP) ............................................................................................ 15
7.1.7
Status Register Protect Bits (SRP1, SRP0).......................................................................... 15
7.1.8
Erase/Program Suspend Status (SUS) ................................................................................ 15
-2-
W25Q32BV
7.2
7.1.9
Security Register Lock Bits (LB3, LB2, LB1) ........................................................................ 15
7.1.10
Quad Enable Bit (QE) ......................................................................................................... 16
7.1.11
Status Register Memory Protection (CMP = 0)................................................................... 17
7.1.12
Status Register Memory Protection (CMP = 1)................................................................... 18
INSTRUCTIONS................................................................................................................. 19
7.2.1
Manufacturer and Device Identification ................................................................................ 19
7.2.2
Instruction Set Table 1 (Erase, Program Instructions)(1) ....................................................... 20
7.2.3
Instruction Set Table 2 (Read Instructions) .......................................................................... 21
7.2.4
Instruction Set Table 3 (ID, Security Instructions) ................................................................ 22
7.2.5
Write Enable (06h) ............................................................................................................... 23
7.2.6
Write Enable for Volatile Status Register (50h) .................................................................... 23
7.2.7
Write Disable (04h) ............................................................................................................... 24
7.2.8
Read Status Register-1 (05h) and Read Status Register-2 (35h)......................................... 25
7.2.9
Write Status Register (01h) .................................................................................................. 25
7.2.10
Read Data (03h) ................................................................................................................. 27
7.2.11
Fast Read (0Bh) ................................................................................................................. 28
7.2.12
Fast Read Dual Output (3Bh) ............................................................................................. 29
7.2.13
Fast Read Quad Output (6Bh)............................................................................................ 30
7.2.14
Fast Read Dual I/O (BBh)................................................................................................... 31
7.2.15
Fast Read Quad I/O (EBh) ................................................................................................. 33
7.2.16
Word Read Quad I/O (E7h) ................................................................................................ 35
7.2.17
Octal Word Read Quad I/O (E3h) ....................................................................................... 37
7.2.18
Set Burst with Wrap (77h) .................................................................................................. 39
7.2.19
Continuous Read Mode Bits (M7-0) ................................................................................... 40
7.2.20
Continuous Read Mode Reset (FFh or FFFFh) .................................................................. 40
7.2.21
Page Program (02h) ........................................................................................................... 41
7.2.22
Quad Input Page Program (32h) ........................................................................................ 42
7.2.23
Sector Erase (20h) ............................................................................................................. 43
7.2.24
32KB Block Erase (52h) ..................................................................................................... 44
7.2.25
64KB Block Erase (D8h)..................................................................................................... 45
7.2.26
Chip Erase (C7h / 60h) ....................................................................................................... 46
7.2.27
Erase / Program Suspend (75h) ......................................................................................... 47
7.2.28
Erase / Program Resume (7Ah) ......................................................................................... 48
7.2.29
Power-down (B9h) .............................................................................................................. 49
7.2.30
Release Power-down / Device ID (ABh) ............................................................................. 50
7.2.31
Read Manufacturer / Device ID (90h) ................................................................................. 52
7.2.32
Read Manufacturer / Device ID Dual I/O (92h) ................................................................... 53
7.2.33
Read Manufacturer / Device ID Quad I/O (94h) ................................................................. 54
7.2.34
Read Unique ID Number (4Bh) .......................................................................................... 55
7.2.35
Read JEDEC ID (9Fh) ........................................................................................................ 56
7.2.36
Read SFDP Register (5Ah) ................................................................................................ 57
-3-
Publication Release Date: October 04,2013
Revision I
W25Q32BV
8.
10.
7.2.38
Program Security Registers (42h) ...................................................................................... 59
7.2.39
Read Security Registers (48h) ........................................................................................... 60
8.3
Operating Ranges .............................................................................................................. 61
Power-Up Power-Down Timing and Requirements(1 ........................................................ 62
8.4
DC Electrical Characteristics .............................................................................................. 63
8.5
AC Measurement Conditions ............................................................................................. 64
8.6
AC Electrical Characteristics .............................................................................................. 65
8.7
AC Electrical Characteristics (cont’d) ................................................................................. 66
8.8
Serial Output Timing ........................................................................................................... 67
8.9
Serial Input Timing.............................................................................................................. 67
8.10
HOLD Timing ...................................................................................................................... 67
8.11
WP Timing .......................................................................................................................... 67
PACKAGE SPECIFICATION .......................................................................................................... 68
9.1
8-Pin SOIC 208-mil (Package Code SS) ........................................................................... 68
9.2
8-Pin VSOP 208-mil (Package Code ST) .......................................................................... 69
9.3
8-Pin PDIP 300-mil (Package Code DA)............................................................................ 70
9.4
8-Pad WSON 6x5-mm (Package Code ZP) ....................................................................... 71
9.5
8-Pad WSON 8x6-mm (Package Code ZE) ....................................................................... 72
9.6
16-Pin SOIC 300-mil (Package Code SF).......................................................................... 73
9.7
24-Ball TFBGA 8x6-mm (Package Code TB, 5x5-1 ball array) ......................................... 74
9.8
24-Ball TFBGA 8x6-mm (Package Code TC, 6x4 ball array) ............................................ 75
ORDERING INFORMATION .......................................................................................................... 76
10.1
11.
Erase Security Registers (44h) ........................................................................................... 58
ELECTRICAL CHARACTERISTICS .............................................................................................. 61
8.1
Absolute Maximum Ratings (1)(2) ................................................................................... 61
8.2
9.
7.2.37
Valid Part Numbers and Top Side Marking ........................................................................ 77
REVISION HISTORY ...................................................................................................................... 78
-4-
W25Q32BV
1. GENERAL DESCRIPTION
The W25Q32BV (32M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial
Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI
(XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with
current consumption as low as 4mA active and 1µA for power-down.
The W25Q32BV array is organized into 16,384 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q32BV
has 1,024 erasable sectors and 64 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q32BV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 320MHz (80MHz x 4) for Quad I/O when
using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient
memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true
XIP (execute in place) operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification with a 64-bit Unique Serial Number.
2. FEATURES
 Family of SpiFlash Memories
– W25Q32BV: 32M-bit / 4M-byte (4,194,304)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
 Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
 Highest Performance Serial Flash
– 104MHz Dual SPI / 80MHz Quad SPI clocks
– 208/320MHz equivalent Dual/Quad SPI
– 40MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles(1)
– More than 20-year data retention
 Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
 Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
 Advanced Security Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Power Supply Lock-Down and OTP protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
 Space Efficient Packaging(1)
– 8-pin SOIC/VSOP 208-mil
– 8-pad WSON 6x5-mm/8x6-mm
– 16-pin SOIC 300-mil
– 8-pin PDIP 300-mil
– 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
– Contact Winbond for KGD and other options
Note 1. Some package types are special orders, please contact Winbond for ordering information.
-5-
Publication Release Date: October 04,2013
Revision I
W25Q32BV
3. PACKAGE TYPES AND PIN CONFIGURATIONS
W25Q32BV is offered in an 8-pin SOIC 208-mil (package code SS), an 8-pin VSOP 208-mil (package
code ST), an 8-pad WSON 6x5-mm or 8x6-mm (package code ZP & ZE), an 8-pin PDIP 300-mil
(package code DA), a 16-pin SOIC 300-mil (package code SF) and 24-ball 8x6-mm TFBGAs (5x5 ball
array - package code TB, 6x4 ball array – package code TC) as shown in Figure 1a-e respectively.
Package diagrams and dimensions are illustrated at the end of this datasheet.
3.1
Pin Configuration SOIC / VSOP 208-mil
Top View
/CS
1
8
VCC
DO (IO1)
2
7
/HOLD (IO3)
/WP (IO2)
3
6
CLK
GND
4
5
DI (IO0)
Figure 1a. W25Q32BV Pin Assignments, 8-pin SOIC / VSOP 208-mil (Package Code SS, ST)
3.2
Pad Configuration WSON 6x5-mm / 8X6-mm
Top View
/CS
1
8
VCC
DO (IO1)
2
7
/HOLD (IO3)
/WP (IO2)
3
6
CLK
GND
4
5
DI (IO0)
Figure 1b. W25Q32BV Pad Assignments, 8-pad WSON 6x5-mm / 8x6-mm (Package Code ZP, ZE)
-6-
W25Q32BV
3.3
Pin Configuration PDIP 300-mil
Top View
/CS
1
8
VCC
DO (IO1)
2
7
/HOLD (IO3)
/WP (IO2)
3
6
CLK
GND
4
5
DI (IO0)
Figure 1c. W25Q32BV Pin Assignments, 8-pin PDIP 300-mil (Package Code DA)
3.4
Pin Description SOIC/VSOP 208-mil, WSON 6x5/8x6-mm and PDIP 300-mil
PIN NO.
PIN NAME
I/O
FUNCTION
1
/CS
I
2
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
3
/WP (IO2)
I/O
Write Protect Input ( Data Input Output 2)*2
4
GND
5
DI (IO0)
I/O
6
CLK
I
7
/HOLD (IO3)
I/O
8
VCC
Chip Select Input
Ground
Data Input (Data Input Output 0)*1
Serial Clock Input
Hold Input (Data Input Output 3)*2
Power Supply
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
-7-
Publication Release Date: October 04,2013
Revision I
W25Q32BV
3.5
Pin Configuration SOIC 300-mil
Top View
/HOLD (IO3)
1
16
CLK
VCC
2
15
DI (IO0)
NC
3
14
NC
NC
4
13
NC
NC
5
12
NC
NC
6
11
NC
/CS
7
10
GND
DO (IO1)
8
9
/WP (IO2)
Figure 1d. W25Q32BV Pin Assignments, 16-pin SOIC 300-mil (Package Code SF)
3.6
Pin Description SOIC 300-mil
PIN NO.
PIN NAME
I/O
FUNCTION
1
/HOLD (IO3)
I/O
2
VCC
Power Supply
3
N/C
No Connect
4
N/C
No Connect
5
N/C
No Connect
6
N/C
No Connect
7
/CS
I
8
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
9
/WP (IO2)
I/O
Write Protect Input (Data Input Output 2)*2
10
GND
Ground
11
N/C
No Connect
12
N/C
No Connect
13
N/C
No Connect
14
N/C
No Connect
15
DI (IO0)
I/O
16
CLK
I
Hold Input (Data Input Output 3)*2
Chip Select Input
Data Input (Data Input Output 0)*1
Serial Clock Input
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
-8-
W25Q32BV
3.7
Ball Configuration TFBGA 8x6-mm
Top View
Top View
A2
A3
A4
A5
A1
A2
A3
A4
NC
NC
NC
NC
NC
NC
NC
NC
B1
B2
B3
B4
B1
B2
B3
B4
B5
NC
CLK
GND
VCC
NC
CLK
GND
VCC
NC
C1
C2
C3
C4
C1
C2
C3
C4
C5
NC
/CS
NC
/WP (IO2)
NC
/CS
NC
/WP (IO2)
NC
D1
D2
D3
D4
D1
D2
D3
D4
D5
NC
DO(IO1)
NC
DO(IO1)
NC
E1
E2
E3
E4
E1
E2
E3
E4
E5
NC
NC
NC
NC
NC
NC
NC
NC
NC
DI(IO0) /HOLD(IO3)
DI(IO0) /HOLD(IO3)
F1
F2
F3
F4
NC
NC
NC
NC
Package Code TB
Package Code TC
Figure 1e. W25Q32BV Ball Assignments, 24-ball TFBGA 8x6-mm (Package Code TB, TC)
3.8
Ball Description TFBGA 8x6-mm
BALL NO.
PIN NAME
I/O
FUNCTION
B2
CLK
I
B3
GND
Ground
B4
VCC
Power Supply
C2
/CS
I
C4
/WP (IO2)
I/O
Write Protect Input (Data Input Output 2)*2
D2
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
D3
DI (IO0)
I/O
Data Input (Data Input Output 0)*1
D4
/HOLD (IO3)
I/O
Hold Input (Data Input Output 3)*2
Multiple
NC
Serial Clock Input
Chip Select Input
No Connect
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
-9-
Publication Release Date: October 04,2013
Revision I
W25Q32BV
4.
PIN DESCRIPTIONS
4.1 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
write status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the device.
After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS
input must track the VCC supply level at power-up (see “Write Protection” and figure 38). If needed a pullup resister on /CS can be used to accomplish this.
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q32BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use
the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge of CLK.
Dual and Quad SPI instructions use the bidirectional IO pins to serially write instructions, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
When QE=1, the /WP pin becomes IO2 and /HOLD pin becomes IO3.
4.3 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion as small as a 4KB sector or the entire memory array can be
hardware protected. The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O,
the /WP pin function is not available since this pin is used for IO2. See figure 1a-e for the pin
configuration of Quad I/O operation.
4.4 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See figure 1a-e for the pin configuration of Quad I/O operation.
4.5 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
- 10 -
W25Q32BV
5. BLOCK DIAGRAM
SFDP Register
000000h
Security Register 1 - 3
0000FFh
003000h
002000h
001000h
0030FFh
0020FFh
0010FFh
Block Segmentation
xxFF00h
•
xxF000h
Sector 15 (4KB)
xxFFFFh
•
xxF0FFh
xxEF00h
•
xxE000h
Sector 14 (4KB)
xxEFFFh
•
xxE0FFh
xxDF00h
•
xxD000h
Sector 13 (4KB)
xxDFFFh
•
xxD0FFh
3FFF00h
•
3F0000h
xx2FFFh
•
xx20FFh
xx1F00h
•
xx1000h
Sector 1 (4KB)
xx1FFFh
•
xx10FFh
xx0F00h
•
xx0000h
Sector 0 (4KB)
xx0FFFh
•
xx00FFh
20FF00h
•
200000h
Block 32 (64KB)
20FFFFh
•
2000FFh
1FFF00h
•
1F0000h
Block 31 (64KB)
1FFFFFh
•
1F00FFh
•
•
•
Write Control
Logic
10FF00h
•
100000h
Block 16 (64KB)
10FFFFh
•
1000FFh
0FFF00h
•
0F0000h
Block 15 (64KB)
0FFFFFh
•
0F00FFh
•
•
•
High Voltage
Generators
00FF00h
•
000000h
/HOLD (IO3)
CLK
SPI
Command &
Control Logic
Page Address
Latch / Counter
W25Q32BV
Sector 2 (4KB)
Write Protect Logic and Row Decode
xx2F00h
•
xx2000h
Status
Register
/CS
3FFFFFh
•
3F00FFh
•
•
•
•
•
•
/WP (IO2)
Block 63 (64KB)
Block 0 (64KB)
Beginning
Page Address
00FFFFh
•
0000FFh
Ending
Page Address
Column Decode
And 256-Byte Page Buffer
Data
DI (IO0)
DO (IO1)
Byte Address
Latch / Counter
Figure 2. W25Q32BV Serial Flash Memory Block Diagram
- 11 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
6.
FUNCTIONAL DESCRIPTIONS
6.1 SPI OPERATIONS
6.1.1 Standard SPI Instructions
The W25Q32BV is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions
use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of
CLK. The DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0, the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3, the CLK signal is normally high on the falling and rising edges of /CS.
6.1.2 Dual SPI Instructions
The W25Q32BV supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast
Read Dual I/O (BBh)” instructions. These instructions allow data to be transferred to or from the device at
two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are ideal for
quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical
code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO pins become
bidirectional I/O pins: IO0 and IO1.
6.1.3 Quad SPI Instructions
The W25Q32BV supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, “Fast
Read Quad I/O (EBh)”, “Word Read Quad I/O (E7h)” and “Octal Word Read Quad I/O (E3h)” instructions.
These instructions allow data to be transferred to or from the device four to six times the rate of ordinary
Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random
access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP).
When using Quad SPI instructions the DI and DO pins become bidirectional IO0 and IO1, and the /WP
and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the non-volatile Quad
Enable bit (QE) in Status Register-2 to be set.
6.1.4 Hold Function
For Standard SPI and Dual SPI operations, the /HOLD signal allows the W25Q32BV operation to be
paused while it is actively selected (when /CS is low). The /HOLD function may be useful in cases where
the SPI data and clock signals are shared with other devices. For example, consider if the page buffer
was only partially written when a priority interrupt requires use of the SPI bus. In this case the /HOLD
function can save the state of the instruction and the data in the buffer so programming can resume
where it left off once the bus is available again. The /HOLD function is only available for standard SPI and
Dual SPI operation, not during Quad SPI.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate
on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
- 12 -
W25Q32BV
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active (low) for the full duration of the /HOLD operation to avoid
resetting the internal logic state of the device.
6.2
WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern, the W25Q32BV
provides several means to protect the data from inadvertent writes.
6.2.1







Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after erase or program
Software and Hardware (/WP pin) write protection using Status Register
Write Protection using Power-down instruction
Lock Down write protection until next power-up
One Time Program (OTP) write protection*
* Note: This feature is available upon special order. Please contact Winbond for details.
Upon power-up or at power-down, the W25Q32BV will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 38). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a writedisabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits.
These settings allow a portion as small as 4KB sector or the entire memory array to be configured as
read only. Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be
enabled or disabled under hardware control. See Status Register section for further information.
Additionally, the Power-down instruction offers an extra level of write protection as all instructions are
ignored except for the Release Power-down instruction.
- 13 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7. STATUS REGISTERS AND INSTRUCTIONS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, Quad SPI setting, Security Register lock status and Erase/Program Suspend status. The Write
Status Register instruction can be used to configure the device write protection features, Quad SPI setting
and Security Register OTP lock. Write access to the Status Register is controlled by the state of the nonvolatile Status Register Protect bits (SRP0, SRP1), the Write Enable instruction, and during
Standard/Dual SPI operations, the /WP pin.
7.1
STATUS REGISTERS
7.1.1 BUSY Status (BUSY)
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register or
Erase/Program Security Register instruction. During this time the device will ignore further instructions
except for the Read Status Register and Erase/Program Suspend instruction (see tW, tPP, tSE, tBE, and
tCE in AC Characteristics). When the program, erase or write status/security register instruction has
completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
7.1.2 Write Enable Latch Status (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Erase
Security Register and Program Security Register.
7.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
7.1.4 Top/Bottom Block Protect Bit (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP0, SRP1 and WEL bits.
7.1.5 Sector/Block Protect Bit (SEC)
The non-volatile Sector/Block Protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect
either 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the
array as shown in the Status Register Memory Protection table. The default setting is SEC=0.
- 14 -
W25Q32BV
7.1.6
Complement Protect Bit (CMP)
The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It is used in
conjunction with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once
CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For
instance, when CMP=0, a top 4KB sector can be protected while the rest of the array is not; when
CMP=1, the top 4KB sector will become unprotected while the rest of the array become read-only. Please
refer to the Status Register Memory Protection table for details. The default setting is CMP=0.
7.1.7 Status Register Protect Bits (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register
(S8 and S7). The SRP bits control the method of write protection: software protection, hardware
protection, power supply lock-down or one time programmable (OTP) protection.
SRP1
SRP0
/WP
Status
Register
Description
0
0
X
Software
Protection
/WP pin has no control. The Status register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
0
1
0
Hardware
Protected
When /WP pin is low the Status Register locked and can not
be written to.
0
1
1
Hardware
Unprotected
When /WP pin is high the Status register is unlocked and can
be written to after a Write Enable instruction, WEL=1.
1
0
X
Power Supply
Lock-Down
1
1
X
One Time
Program(2)
Status Register is protected and can not be written to again
until the next power-down, power-up cycle.(1)
Status Register is permanently protected and can not be
written to.
Note:
1. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state.
2. This feature is available upon special order. Please contact Winbond for details.
7.1.8
Erase/Program Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing a
Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase/Program Resume
(7Ah) instruction as well as a power-down, power-up cycle.
7.1.9
Security Register Lock Bits (LB3, LB2, LB1)
The Security Register Lock Bits (LB3, LB2, LB1) are non-volatile One Time Program (OTP) bits in Status
Register (S13, S12, S11) that provide the write protect control and status to the Security Registers. The
default state of LB[3:1] is 0, Security Registers are unlocked. LB[3:1] can be set to 1 individually using the
Write Status Register instruction. LB[3:1] are One Time Programmable (OTP), once it’s set to 1, the
corresponding 256-Byte Security Register will become read-only permanently.
- 15 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.1.10 Quad Enable Bit (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI
operation. When the QE bit is set to a 0 state (factory default), the /WP pin and /HOLD are enabled.
When the QE bit is set to a 1, the Quad IO2 and IO3 pins are enabled, and /WP and /HOLD functions are
disabled.
WARNING: If the /WP or /HOLD pins are tied directly to the power supply or ground during
standard SPI or Dual SPI operation, the QE bit should never be set to a 1.
S7
S6
S5
S4
S3
S2
SRP0
SEC
TB
BP2
BP1
BP0
S1
S0
WEL BUSY
STATUS REGISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
Figure 3a. Status Register-1
S15
S14
S13
S12
S11
S10
S9
S8
SUS
CMP
LB3
LB2
LB1
(R)
QE
SRP1
SUSPEND STATUS
COMPLEMENT PROTECT
(non-volatile)
SECURITY REGISTER LOCK BITS
(non-volatile OTP)
RESERVED
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(non-volatile)
Figure 3b. Status Register-2
- 16 -
W25Q32BV
7.1.11
Status Register Memory Protection (CMP = 0)
STATUS REGISTER(1)
W25Q32BV (32M-BIT) MEMORY PROTECTION(3)
SEC
TB
BP2
BP1
BP0
PROTECTED
BLOCK(S)
PROTECTED
ADDRESSES
PROTECTED
DENSITY
PROTECTED
PORTION(2)
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
63
3F0000h – 3FFFFFh
64KB
Upper 1/64
0
0
0
1
0
62 and 63
3E0000h – 3FFFFFh
128KB
Upper 1/32
0
0
0
1
1
60 thru 63
3C0000h – 3FFFFFh
256KB
Upper 1/16
0
0
1
0
0
56 thru 63
380000h – 3FFFFFh
512KB
Upper 1/8
0
0
1
0
1
48 thru 63
300000h – 3FFFFFh
1MB
Upper 1/4
0
0
1
1
0
32 thru 63
200000h – 3FFFFFh
2MB
Upper 1/2
0
1
0
0
1
0
000000h – 00FFFFh
64KB
Lower 1/64
0
1
0
1
0
0 and 1
000000h – 01FFFFh
128KB
Lower 1/32
0
1
0
1
1
0 thru 3
000000h – 03FFFFh
256KB
Lower 1/16
0
1
1
0
0
0 thru 7
000000h – 07FFFFh
512KB
Lower 1/8
0
1
1
0
1
0 thru 15
000000h – 0FFFFFh
1MB
Lower 1/4
0
1
1
1
0
0 thru 31
000000h – 1FFFFFh
2MB
Lower 1/2
X
X
1
1
1
0 thru 63
000000h – 3FFFFFh
4MB
ALL
1
0
0
0
1
63
3FF000h – 3FFFFFh
4KB
U - 1/1024
1
0
0
1
0
63
3FE000h – 3FFFFFh
8KB
U - 1/512
1
0
0
1
1
63
3FC000h – 3FFFFFh
16KB
U - 1/256
1
0
1
0
X
63
3F8000h – 3FFFFFh
32KB
U - 1/128
1
1
0
0
1
0
000000h – 000FFFh
4KB
L - 1/1024
1
1
0
1
0
0
000000h – 001FFFh
8KB
L - 1/512
1
1
0
1
1
0
000000h – 003FFFh
16KB
L - 1/256
1
1
1
0
X
0
000000h – 007FFFh
32KB
L - 1/128
Notes:
1. X = don’t care
2. L = Lower; U = Upper
3. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
- 17 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.1.12
Status Register Memory Protection (CMP = 1)
STATUS REGISTER(1)
W25Q32BV (32M-BIT) MEMORY PROTECTION(3)
SEC
TB
BP2
BP1
BP0
PROTECTED
BLOCK(S)
PROTECTED
ADDRESSES
PROTECTED
DENSITY
PROTECTED
PORTION(2)
X
X
0
0
0
0 thru 63
000000h – 3FFFFFh
4MB
ALL
0
0
0
0
1
0 thru 62
000000h – 3EFFFFh
4,032KB
Lower 63/64
0
0
0
1
0
0 and 61
000000h – 3DFFFFh
3,968KB
Lower 31/32
0
0
0
1
1
0 thru 59
000000h – 3BFFFFh
3,840KB
Lower 15/16
0
0
1
0
0
0 thru 55
000000h – 37FFFFh
3,584KB
Lower 7/8
0
0
1
0
1
0 thru 47
000000h – 2FFFFFh
3MB
Lower 3/4
0
0
1
1
0
0 thru 31
000000h – 1FFFFFh
2MB
Lower 1/2
0
1
0
0
1
1 thru 63
010000h – 3FFFFFh
4,032KB
Upper 63/64
0
1
0
1
0
2 and 63
020000h – 3FFFFFh
3,968KB
Upper 31/32
0
1
0
1
1
4 thru 63
040000h – 3FFFFFh
3,840KB
Upper 15/16
0
1
1
0
0
8 thru 63
080000h – 3FFFFFh
3,584KB
Upper 7/8
0
1
1
0
1
16 thru 63
100000h – 3FFFFFh
3MB
Upper 3/4
0
1
1
1
0
32 thru 63
200000h – 3FFFFFh
2MB
Upper 1/2
X
X
1
1
1
NONE
NONE
NONE
NONE
1
0
0
0
1
0 thru 63
000000h – 3FEFFFh
4,092KB
L - 1023/1024
1
0
0
1
0
0 thru 63
000000h – 3FDFFFh
4,088KB
L - 511/512
1
0
0
1
1
0 thru 63
000000h – 3FBFFFh
4,080KB
L - 255/256
1
0
1
0
X
0 thru 63
000000h – 3F7FFFh
4,064KB
L - 127/128
1
1
0
0
1
0 thru 63
001000h – 3FFFFFh
4,092KB
U - 1023/1024
1
1
0
1
0
0 thru 63
002000h – 3FFFFFh
4,088KB
U - 511/512
1
1
0
1
1
0 thru 63
004000h – 3FFFFFh
4,080KB
U - 255/256
1
1
1
0
X
0 thru 63
008000h – 3FFFFFh
4,064KB
U - 127/128
Notes:
1. X = don’t care
2. L = Lower; U = Upper
3. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
- 18 -
W25Q32BV
7.2
INSTRUCTIONS
The instruction set of the W25Q32BV consists of thirty five basic instructions that are fully controlled
through the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI
input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 37. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
7.2.1
Manufacturer and Device Identification
MANUFACTURER ID
(MF7-MF0)
Winbond Serial Flash
EFh
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h
9Fh
W25Q32BV
15h
4016h
- 19 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.2
Instruction Set Table 1 (Erase, Program Instructions)(1)
INSTRUCTION NAME
Write Enable
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
06h
Write Enable for Volatile
Status Register
50h
Write Disable
04h
Read Status Register-1
05h
(S7–S0)
Read Status Register-2
35h
(S15-S8)
Write Status Register
01h
(S7–S0)
(S15-S8)
Page Program
02h
A23–A16
A15–A8
A7–A0
(D7–D0)
Quad Page Program
32h
A23–A16
A15–A8
A7–A0
(D7–D0, …)
Sector Erase (4KB)
20h
A23–A16
A15–A8
A7–A0
Block Erase (32KB)
52h
A23–A16
A15–A8
A7–A0
Block Erase (64KB)
D8h
A23–A16
A15–A8
A7–A0
Chip Erase
75h
Erase / Program Resume
7Ah
Power-down
B9h
Continuous Read Mode
(4)
(2)
(3)
C7h/60h
Erase / Program Suspend
Reset
(2)
FFh
FFh
Notes:
1.
Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
2.
The Status Register contents will repeat continuously until /CS terminates the instruction.
3.
Quad Page Program Input Data:
IO0 = (D4, D0, ……)
IO1 = (D5, D1, ……)
IO2 = (D6, D2, ……)
IO3 = (D7, D3, ……)
4.
This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section
7.2.19 & 7.2.20 for more information.
- 20 -
W25Q32BV
7.2.3
Instruction Set Table 2 (Read Instructions)
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
dummy
Fast Read Dual Output
3Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …)
Fast Read Quad Output
6Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …)
Fast Read Dual I/O
BBh
A23-A8
Fast Read Quad I/O
EBh
A23-A0, M7-M0
(4)
(x,x,x,x, D7-D0, …)
(D7-D0, …)
E7h
A23-A0, M7-M0
(4)
(x,x, D7-D0, …)
(6)
(D7-D0, …)
E3h
A23-A0, M7-M0
(4)
(D7-D0, …)
77h
xxxxxx, W6-W4
INSTRUCTION NAME
Word Read Quad I/O
(7)
Octal Word Read Quad I/O
(8)
Set Burst with Wrap
(2)
A7-A0, M7-M0
(2)
BYTE 6
(D7-D0)
(1)
(3)
(1)
(D7-D0, …)
(5)
(3)
(3)
(3)
(4)
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
4. Quad Input Address
IO0 = A20, A16, A12, A8,
IO1 = A21, A17, A13, A9,
IO2 = A22, A18, A14, A10,
IO3 = A23, A19, A15, A11,
A4, A0, M4, M0
A5, A1, M5, M1
A6, A2, M6, M2
A7, A3, M7, M3
Set Burst with Wrap Input
IO0 = x, x, x, x, x, x, W4, x
IO1 = x, x, x, x, x, x, W5, x
IO2 = x, x, x, x, x, x, W6, x
IO3 = x, x, x, x, x, x, x, x
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
6. Word Read Quad I/O Data
IO0 = (x, x, D4, D0, …..)
IO1 = (x, x, D5, D1, …..)
IO2 = (x, x, D6, D2, …..)
IO3 = (x, x, D7, D3, …..)
7. The lowest address bit must be 0. ( A0 = 0 )
8. The lowest 4 address bits must be 0. ( A0, A1, A2, A3 = 0 )
- 21 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.4
Instruction Set Table 3 (ID, Security Instructions)
INSTRUCTION
NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
ABh
dummy
dummy
dummy
90h
dummy
dummy
00h
92h
A23-A8
A7-A0, M[7:0]
(MF[7:0], ID[7:0])
94h
A23-A0, M[7:0]
xxxx, (MF[7:0], ID[7:0])
(MF[7:0], ID[7:0], …)
Release Power down /
Device ID
Manufacturer/
Device ID
(2)
Manufacturer/Device ID
by Dual I/O
Manufacture/Device ID
by Quad I/O
(MF7-MF0)
(ID7-ID0)
(ID15-ID8)
(ID7-ID0)
Memory Type
Capacity
4Bh
dummy
dummy
dummy
dummy
(ID63-ID0)
5Ah
00h
00h
A7–A0
dummy
(D7-0)
(3)
44h
A23–A16
A15–A8
A7–A0
(3)
42h
A23–A16
A15–A8
A7–A0
(D7-0)
(D7-0)
(3)
48h
A23–A16
A15–A8
A7–A0
dummy
(D7-0)
Read Unique ID
Read SFDP Register
Erase
Program
Read
Security Registers
(1)
(ID7-ID0)
(MF7-MF0)
9Fh
Security Registers
BYTE 6
Manufacturer
JEDEC ID
Security Registers
BYTE 5
Notes:
1. The Device ID will repeat continuously until /CS terminates the instruction.
2. See Manufacturer and Device Identification table for Device ID information.
3. Security Register Address:
Security Register 1:
Security Register 2:
Security Register 3:
A23-16 = 00h;
A23-16 = 00h;
A23-16 = 00h;
A15-8 = 10h;
A15-8 = 20h;
A15-8 = 30h;
A7-0 = byte address
A7-0 = byte address
A7-0 = byte address
- 22 -
W25Q32BV
7.2.5 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block
Erase, Chip Erase, Write Status Register and Erase/Program Security Registers instruction. The Write
Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI)
pin on the rising edge of CLK, and then driving /CS high.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 0
Mode 3
Mode 0
Instruction (06h)
DI
(IO0)
High Impedance
DO
(IO1)
Figure 4. Write Enable Instruction Sequence Diagram
7.2.6 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 7.1 can also be written to as volatile bits. This
gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register nonvolatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status
Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable
for Volatile Status Register instruction (Figure 5) will not set the Write Enable Latch (WEL) bit, it is only
valid for the Write Status Register instruction to change the volatile Status Register bit values.
/CS
Mode 3
CLK
0
1
2
3
4
Mode 0
5
6
7
Mode 3
Mode 0
Instruction (50h)
DI
(IO0)
DO
(IO1)
High Impedance
Figure 5. Write Enable for Volatile Status Register Instruction Sequence Diagram
- 23 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.7 Write Disable (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page
Program, Sector Erase, Block Erase and Chip Erase instructions.
Write Disable instruction can also be used to invalidate the Write Enable for Volatile Status Register
instruction.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 0
Mode 0
Instruction (04h)
DI
(IO0)
DO
(IO1)
Mode 3
High Impedance
Figure 6. Write Disable Instruction Sequence Diagram
- 24 -
W25Q32BV
7.2.8 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 or “35h” for Status
Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on the
DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in Figure 7. The Status
Register bits are shown in Figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP0,
SRP1, QE, LB[3:1], CMP and SUS bits (see Status Register section earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when
the cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 7. The instruction is completed by driving /CS high.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Instruction (05h or 35h)
DI
(IO0)
High Impedance
DO
(IO1)
*
Status Register 1 or 2 out
7
6
5
4
*
= MSB
3
2
1
Status Register 1 or 2 out
0
7
6
5
4
3
2
1
0
7
*
Figure 7. Read Status Register Instruction Sequence Diagram
7.2.9 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. Only non-volatile Status
Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7 thru 2 of Status Register-1) and CMP, LB3, LB2,
LB1, QE, SRP1 (bits 14 thru 8 of Status Register-2) can be written to. All other Status Register bit
locations are read-only and will not be affected by the Write Status Register instruction. LB[3:1] are nonvolatile OTP bits, once it is set to 1, it can not be cleared to 0. The Status Register bits are shown in
Figure 3 and described in 7.1.
To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have
been executed for the device to accept the Write Status Register Instruction (Status Register bit WEL
must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction
code “01h”, and then writing the status register data byte as illustrated in Figure 8.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must
have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0).
However, SRP1 and LB3, LB2, LB1 can not be changed from “1” to “0” because of the OTP protection for
these bits. Upon power off, the volatile Status Register bit values will be lost, and the non-volatile Status
Register bit values will be restored when power on again.
- 25 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
To complete the Write Status Register instruction, the /CS pin must be driven high after the eighth or
sixteenth bit of data that is clocked in. If this is not done the Write Status Register instruction will not be
executed. If /CS is driven high after the eighth clock (compatible with the 25X series) the CMP and QE
bits will be cleared to 0.
During non-volatile Status Register write operation (06h combined with 01h), after /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Status
Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after /CS is driven high, the
Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Please refer to 7.1 for detailed Status Register Bit descriptions. Factory default for all status Register bits
are 0.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Mode 0
Instruction (01h)
DI
(IO0)
Status Register 1 in
7
6
5
4
3
*
2
Status Register 2 in
1
0
15
14
13
*
High Impedance
DO
(IO1)
Mode 3
* = MSB
Figure 8. Write Status Register Instruction Sequence Diagram
- 26 -
12
11
10
9
8
W25Q32BV
7.2.10 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by
a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in Figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
32
33
34
35
36
37
38
39
Mode 0
Instruction (03h)
DI
(IO0)
24-Bit Address
23
22
21
3
2
1
0
*
Data Out 1
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
*
* = MSB
Figure 9. Read Data Instruction Sequence Diagram
- 27 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.11 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in Figure 10. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DO pin is a “don’t care”.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
Instruction (0Bh)
24-Bit Address
DI
(IO0)
23
22
21
42
43
3
2
1
0
45
46
47
48
*
High Impedance
DO
(IO1)
* = MSB
/CS
31
32
33
34
35
36
37
38
39
40
41
44
49
50
51
52
53
54
55
CLK
Dummy Clocks
DI
(IO0)
DO
(IO1)
0
High Impedance
Data Out 1
7
6
5
4
*
3
Data Out 2
2
1
0
7
*
Figure 10. Fast Read Instruction Sequence Diagram
- 28 -
6
5
4
3
2
1
0
7
W25Q32BV
7.2.12 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q32BV at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in Figure 11. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks
is “don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data
out clock.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
Instruction (3Bh)
24-Bit Address
DI
(IO0)
23
22
21
42
43
3
2
1
0
45
46
47
48
*
High Impedance
DO
(IO1)
* = MSB
/CS
31
32
33
34
35
36
37
38
39
40
41
44
49
50
51
52
53
54
55
CLK
IO0 switches from
Input to Output
Dummy Clocks
DI
(IO0)
DO
(IO1)
0
6
High Impedance
7
*
4
2
0
6
5
3
1
7
Data Out 1
*
4
2
0
6
5
3
1
7
Data Out 2
*
4
2
0
6
5
3
1
7
Data Out 3
*
4
2
0
6
5
3
1
7
Data Out 4
Figure 11. Fast Read Dual Output Instruction Sequence Diagram
- 29 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.13 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be
executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q32BV
at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in Figure 12. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should
be high-impedance prior to the falling edge of the first data out clock.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
Instruction (6Bh)
24-Bit Address
IO0
23
High Impedance
IO1
22
21
42
43
3
2
1
45
46
47
0
*
High Impedance
IO2
High Impedance
IO3
* = MSB
/CS
31
32
33
34
35
36
37
38
39
40
41
44
CLK
IO0 switches from
Input to Output
Dummy Clocks
IO0
IO1
IO2
IO3
0
High Impedance
High Impedance
High Impedance
4
0
4
0
4
0
4
0
4
5
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Figure 12. Fast Read Quad Output Instruction Sequence Diagram
- 30 -
Byte 4
W25Q32BV
7.2.14 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 13a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after /CS
is raised and then lowered) does not require the BBh instruction code, as shown in Figure 13b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Instruction (BBh)
A23-16
A15-8
A7-0
M7-0
DI
(IO0)
22
20
18
16
14
12
10
8
6
4
2
0
DO
(IO1)
23
21
19
17
15
13
11
9
7
5
3
1
*
* = MSB
6
4
2
0
7
5
3
1
*
/CS
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
CLK
IOs switch from
Input to Output
DI
(IO0)
0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
DO
(IO1)
1
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
*
Byte 1
*
Byte 2
*
*
Byte 3
Byte 4
Figure 13a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4  10)
- 31 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 0
A23-16
A15-8
A7-0
M7-0
DI
(IO0)
22
20
18
16
14
12
10
8
6
4
2
0
6
4
2
0
DO
(IO1)
23
21
19
17
15
13
11
9
7
5
3
1
7
5
3
1
30
31
*
*
* = MSB
/CS
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
CLK
IOs switch from
Input to Output
DI
(IO0)
0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
DO
(IO1)
1
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
*
Byte 1
*
*
Byte 2
Byte 3
*
Byte 4
Figure 13b. Fast Read Dual I/O Instruction Sequence (Previous instruction set M5-4 = 10)
- 32 -
W25Q32BV
7.2.15 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except
that address and data bits are input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy
clock are required prior to the data output. The Quad I/O dramatically reduces instruction overhead
allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit
(QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Instruction.
Fast Read Quad I/O with “Continuous Read Mode”
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 14a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the EBh instruction code, as shown in Figure 14b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Instruction (EBh)
A23-16
A15-8
A7-0
M7-0
Dummy
IOs switch from
Input to Output
Dummy
IO0
20
16
12
8
4
0
4
0
4
0
4
0
4
IO1
21
17
13
9
5
1
5
1
5
1
5
1
5
IO2
22
18
14
10
6
2
6
2
6
2
6
2
6
IO3
23
19
15
11
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Figure 14a. Fast Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4  10)
- 33 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
/CS
Mode 3
CLK
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
Mode 0
A23-16
A15-8
A7-0
M7-0
Dummy
IOs switch from
Input to Output
Dummy
IO0
20
16
12
8
4
0
4
0
4
0
4
0
4
IO1
21
17
13
9
5
1
5
1
5
1
5
1
5
IO2
22
18
14
10
6
2
6
2
6
2
6
2
6
IO3
23
19
15
11
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Figure 14b. Fast Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” command prior to EBh. The “Set Burst with Wrap” command can either
enable or disable the “Wrap Around” feature for the following EBh commands. When “Wrap Around” is
enabled, the data being accessed can be limited to either an 8, 16, 32 or 64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending
boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 7.2.18 for detail descriptions.
- 34 -
W25Q32BV
7.2.16 Word Read Quad I/O (E7h)
The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except
that the lowest Address bit (A0) must equal 0 and only two Dummy clocks are required prior to the data
output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code
execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to
enable the Word Read Quad I/O Instruction.
Word Read Quad I/O with “Continuous Read Mode”
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 15a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the E7h instruction code, as shown in Figure 15b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Mode 0
Instruction (E7h)
A23-16
A15-8
A7-0
M7-0
IOs switch from
Input to Output
Dummy
IO0
20
16
12
8
4
0
4
0
4
0
4
0
4
IO1
21
17
13
9
5
1
5
1
5
1
5
1
5
IO2
22
18
14
10
6
2
6
2
6
2
6
2
6
IO3
23
19
15
11
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Figure 15a. Word Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4  10)
- 35 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
/CS
Mode 3
CLK
0
1
2
3
4
6
5
7
8
9
10
11
12
13
Mode 0
A23-16
A15-8
A7-0
M7-0
IOs switch from
Input to Output
Dummy
IO0
20
16
12
8
4
0
4
0
4
0
4
0
4
IO1
21
17
13
9
5
1
5
1
5
1
5
1
5
IO2
22
18
14
10
6
2
6
2
6
2
6
2
6
IO3
23
19
15
11
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Figure 15b. Word Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Word Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Word Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” command prior to E7h. The “Set Burst with Wrap” command can either
enable or disable the “Wrap Around” feature for the following E7h commands. When “Wrap Around” is
enabled, the data being accessed can be limited to either an 8, 16, 32 or 64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending
boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 7.2.18 for detail descriptions.
- 36 -
W25Q32BV
7.2.17 Octal Word Read Quad I/O (E3h)
The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh) instruction
except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the dummy clocks are
not required, which further reduces the instruction overhead allowing even faster random access for code
execution (XIP). The Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal Word
Read Quad I/O Instruction.
Octal Word Read Quad I/O with “Continuous Read Mode”
The Octal Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 16a. The
upper nibble of the (M7-4) controls the length of the next Octal Word Read Quad I/O instruction through
the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out
clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the E3h instruction code, as shown in Figure 16b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Mode 0
Instruction (E3h)
A23-16
A15-8
A7-0
IOs switch from
Input to Output
M7-0
IO0
20
16
12
8
4
0
4
0
4
0
4
0
4
0
4
IO1
21
17
13
9
5
1
5
1
5
1
5
1
5
1
5
IO2
22
18
14
10
6
2
6
2
6
2
6
2
6
2
6
IO3
23
19
15
11
7
3
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Byte 4
Figure 16a. Octal Word Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4  10)
- 37 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
/CS
Mode 3
CLK
0
1
2
3
4
6
5
7
8
9
10
11
12
13
Mode 0
A23-16
A15-8
A7-0
IOs switch from
Input to Output
M7-0
IO0
20
16
12
8
4
0
4
0
4
0
4
0
4
0
4
IO1
21
17
13
9
5
1
5
1
5
1
5
1
5
1
5
IO2
22
18
14
10
6
2
6
2
6
2
6
2
6
2
6
IO3
23
19
15
11
7
3
7
3
7
3
7
3
7
3
7
Byte 1
Byte 2
Byte 3
Byte 4
Figure 16b. Octal Word Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
- 38 -
W25Q32BV
7.2.18 Set Burst with Wrap (77h)
The Set Burst with Wrap (77h) instruction is used in conjunction with “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions to access a fixed length of 8/16/32/64-byte section within a 256-byte page.
Certain applications can benefit from this feature and improve the overall system code execution
performance.
Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the /CS pin low
and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The
instruction sequence is shown in Figure 17. Wrap bit W7 and the lower nibble W3-0 are not used.
W4 = 0
W6, W5
0
0
1
1
W4 =1 (DEFAULT)
Wrap Around
Wrap Length
Wrap Around
Wrap Length
Yes
Yes
Yes
Yes
8-byte
16-byte
32-byte
64-byte
No
No
No
No
N/A
N/A
N/A
N/A
0
1
0
1
Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within any
page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with
Wrap instruction should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case
of a system Reset while W4 = 0, it is recommended that the controller issues a Set Burst with Wrap
instruction to reset W4 = 1 prior to any normal Read instructions since W25Q32BV does not have a
hardware Reset Pin.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 0
Mode 3
Mode 0
don't
care
Instruction (77h)
don't
care
don't
care
Wrap Bit
IO0
X
X
X
X
X
X
w4
X
IO1
X
X
X
X
X
X
w5
X
IO2
X
X
X
X
X
X
w6
X
IO3
X
X
X
X
X
X
X
X
Figure 17. Set Burst with Wrap Instruction Sequence
- 39 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.19 Continuous Read Mode Bits (M7-0)
The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O”, “Fast Read Quad
I/O”, “Word Read Quad I/O” and “Octal Word Read Quad I/O” instructions to provide the highest random
Flash memory access rate with minimum SPI instruction overhead, thus allow true XIP (execute in place)
to be performed on serial flash devices.
M7-0 need to be set by the Dual/Quad I/O Read instructions. M5-4 are used to control whether the 8-bit
SPI instruction code (BBh, EBh, E7h or E3h) is needed or not for the next command. When M5-4 = (1,0),
the next command will be treated same as the current Dual/Quad I/O Read command without needing
the 8-bit instruction code; when M5-4 do not equal to (1,0), the device returns to normal SPI mode, all
commands can be accepted. M7-6 and M3-0 are reserved bits for future use, either 0 or 1 values can be
used.
7.2.20 Continuous Read Mode Reset (FFh or FFFFh)
Continuous Read Mode Reset instruction can be used to set M4 = 1, thus the device will release the
Continuous Read Mode and return to normal SPI operation, as shown in Figure 18.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Mode 0
15
Mode 3
Mode 0
Mode Bit Reset
for Quad I/O (FFh)
Mode Bit Reset
for Dual I/O (FFFFh)
IO0
IO1
Don't Care
IO2
Don't Care
IO3
Don't Care
Figure 18. Continuous Read Mode Reset for Fast Read Dual/Quad I/O
Since W25Q32BV does not have a hardware Reset pin, so if the controller resets while W25Q32BV is set
to Continuous Mode Read, the W25Q32BV will not recognize any initial standard SPI instructions from
the controller. To address this possibility, it is recommended to issue a Continuous Read Mode Reset
instruction as the first instruction after a system Reset. Doing so will release the device from the
Continuous Read Mode and allow Standard SPI instructions to be recognized.
To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The
instruction is “FFh”. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are
needed to shift in instruction “FFFFh”.
- 40 -
W25Q32BV
7.2.21 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the
device will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated
by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0)
and at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the
instruction while data is being sent to the device. The Page Program instruction sequence is shown in
Figure 19.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS is
driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits.
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
32
33
34
35
36
37
38
39
Mode 0
2
1
*
0
6
5
4
3
2
1
0
2079
3
2078
21
2077
22
2076
23
Data Byte 1
2075
24-Bit Address
2074
Instruction (02h)
DI
(IO0)
2073
CLK
7
*
* = MSB
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
2072
/CS
CLK
Mode 0
Data Byte 2
DI
(IO0)
Mode 3
0
7
*
6
5
4
3
Data Byte 3
2
1
0
7
6
5
4
3
*
Data Byte 256
2
1
0
7
6
5
4
3
2
1
0
*
Figure 19. Page Program Instruction Sequence Diagram
- 41 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.22 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction
since the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
instruction must be executed before the device will accept the Quad Page Program instruction (Status
Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction
code “32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin
must be held low for the entire length of the instruction while data is being sent to the device. All other
functions of Quad Page Program are identical to standard Page Program. The Quad Page Program
instruction sequence is shown in Figure 20.
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
22
21
3
2
1
543
23
542
IO0
539
24-Bit Address
538
Instruction (32h)
541
CLK
0
*
IO1
IO2
IO3
* = MSB
33
34
35
36
37
540
32
537
31
536
/CS
CLK
Mode 0
Byte
253
Byte
254
Byte
255
Byte
256
Byte 1
Byte 2
Byte 3
4
0
4
0
4
0
4
0
4
0
4
0
4
0
IO1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
IO2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
IO3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
IO0
Mode 3
0
*
*
*
*
*
*
*
Figure 20. Quad Input Page Program Instruction Sequence Diagram
- 42 -
W25Q32BV
7.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in Figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
29
30
31
Mode 0
Mode 3
Mode 0
Instruction (20h)
24-Bit Address
DI
(IO0)
DO
(IO1)
9
23
22
2
1
0
*
High Impedance
* = MSB
Figure 21. Sector Erase Instruction Sequence Diagram
- 43 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.24 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in Figure 22.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
29
30
31
Mode 3
Mode 0
Instruction (52h)
24-Bit Address
DI
(IO0)
DO
(IO1)
9
Mode 0
23
22
2
*
High Impedance
* = MSB
Figure 22. 32KB Block Erase Instruction Sequence Diagram
- 44 -
1
0
W25Q32BV
7.2.25 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in Figure 23.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle
is in progress, the Read Status Register instruction may still be accessed for checking the status of the
BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished
and the device is ready to accept other instructions again. After the Block Erase cycle has finished the
Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
29
30
31
Mode 3
Mode 0
Instruction (D8h)
24-Bit Address
DI
(IO0)
DO
(IO1)
9
Mode 0
23
22
2
1
0
*
High Impedance
* = MSB
Figure 23. 64KB Block Erase Instruction Sequence Diagram
- 45 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.26 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The
BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to
accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 0
Mode 0
Instruction (C7h/60h)
DI
(IO0)
DO
(IO1)
Mode 3
High Impedance
Figure 24. Chip Erase Instruction Sequence Diagram
- 46 -
W25Q32BV
7.2.27 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors
or blocks. The Erase/Program Suspend instruction sequence is shown in Figure 25.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or
block that was being suspended may become corrupted. When the device is powered up again, it is
recommended for the user to repeat the same Erase or Program operation that was interrupted, at the
same address location, to avoid the potention data corruption.
/CS
tSUS
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 3
Mode 0
Mode 0
Instruction (75h)
DI
(IO0)
DO
(IO1)
High Impedance
Accept instructions
Figure 25. Erase/Program Suspend Instruction Sequence
- 47 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in Figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 3
Mode 0
Mode 0
Instruction (7Ah)
DI
(IO0)
Resume previously
suspended Program or
Erase
Figure 26. Erase/Program Resume Instruction Sequence
- 48 -
W25Q32BV
7.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
Figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Powerdown / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
tDP
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 3
Mode 0
Mode 0
Instruction (B9h)
DI
(IO0)
Stand-by current
Power-down current
Figure 27. Deep Power-down Instruction Sequence Diagram
- 49 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.30 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in Figure 28a. Release from powerdown will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure
28a. The Device ID values for the W25Q32BV is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in Figure 28b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
/CS
tRES1
Mode 3
CLK
0
1
2
3
4
5
6
7
Mode 3
Mode 0
Mode 0
Instruction (ABh)
DI
(IO0)
Power-down current
Figure 28a. Release Power-down Instruction Sequence
- 50 -
Stand-by current
W25Q32BV
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
29
30
31
32
33
34
35
36
37
38
Mode 3
Mode 0
Mode 0
Instruction (ABh)
DI
(IO0)
tRES2
3 Dummy Bytes
23
22
2
1
0
*
Device ID
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
*
* = MSB
Power-down current
Stand-by current
Figure 28b. Release Power-down / Device ID Instruction Sequence Diagram
- 51 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.31 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in Figure 29. The Device ID values for the W25Q32BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
Instruction (90h)
Address (000000h)
DI
(IO0)
23
22
21
42
43
3
2
45
46
1
0
*
High Impedance
DO
(IO1)
* = MSB
/CS
31
32
33
34
35
36
37
38
39
40
41
44
Mode 3
CLK
DI
(IO0)
Mode 0
0
DO
(IO1)
7
Manufacturer ID (EFh)
*
6
5
4
3
Device ID
Figure 29. Read Manufacturer / Device ID Diagram
- 52 -
2
1
0
W25Q32BV
7.2.32 Read Manufacturer / Device ID Dual I/O (92h)
The Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer/Device ID
instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 2x
speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits, with the capability to input the
Address bits two bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID
are shifted out 2 bits per clock on the falling edge of CLK with most significant bits (MSB) first as shown in
Figure 30. The Device ID values for the W25Q32BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Instruction (92h)
A23-16
DI
(IO0)
High Impedance
DO
(IO1)
*
= MSB
A15-8
A7-0 (00h)
M7-0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
*
*
*
*
/CS
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
Mode 3
CLK
Mode 0
IOs switch from
Input to Output
DI
(IO0)
0
6
4
2
0
6
4
2
0
6
DO
(IO1)
1
7
5
3
1
7
5
3
1
*
MFR ID
*
Device ID
4
2
0
6
7
5
3
1
7
*
MFR ID
(repeat)
*
4
2
0
5
3
1
Device ID
(repeat)
Figure 30. Read Manufacturer / Device ID Dual I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
- 53 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.33 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits and then four clock dummy cycles,
with the capability to input the Address bits four bits per clock. After which, the Manufacturer ID for
Winbond (EFh) and the Device ID are shifted out four bits per clock on the falling edge of CLK with most
significant bit (MSB) first as shown in Figure 31. The Device ID values for the W25Q32BV is listed in
Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID
will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read
continuously, alternating from one to the other. The instruction is completed by driving /CS high.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Instruction (94h)
IO0
High Impedance
IO1
High Impedance
IO2
High Impedance
IO3
A7-0
(00h)
M7-0
Dummy
IOs switch from
Input to Output
A23-16
A15-8
Dummy
4
0
4
0
4
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
5
1
5
1
6
2
6
2
6
2
6
2
6
2
6
2
7
3
7
3
7
3
7
3
7
3
7
3
MFR ID
Device ID
/CS
23
24
25
26
27
28
29
30
Mode 3
CLK
Mode 0
IO0
0
4
0
4
0
4
0
4
0
IO1
1
5
1
5
1
5
1
5
1
IO2
2
6
2
6
2
6
2
6
2
IO3
3
7
3
7
3
7
3
7
3
MFR ID
(repeat)
Device ID
(repeat)
MFR ID
(repeat)
Device ID
(repeat)
Figure 31. Read Manufacturer / Device ID Quad I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
- 54 -
W25Q32BV
7.2.34 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to
each W25Q32BV device. The ID number can be used in conjunction with user software methods to help
prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin
low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64bit ID is shifted out on the falling edge of CLK as shown in Figure 32.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 0
Instruction (4Bh)
Dummy Byte 1
Dummy Byte 2
DI
(IO0)
High Impedance
DO
(IO1)
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
102
24
101
23
100
/CS
Mode 3
CLK
Mode 0
Dummy Byte 3
Dummy Byte 4
DI
(IO0)
DO
(IO1)
High Impedance
* = MSB
63
62
*
64-bit Unique Serial Number
61
2
1
0
Figure 32. Read Unique ID Number Instruction Sequence
- 55 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.35 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q32BV provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin
low and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh)
and two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the
falling edge of CLK with most significant bit (MSB) first as shown in Figure 33. For memory type and
capacity values refer to Manufacturer and Device Identification table.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 0
Instruction (9Fh)
DI
(IO0)
Manufacturer ID (EFh)
High Impedance
DO
(IO1)
* = MSB
/CS
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Mode 3
CLK
Mode 0
DI
(IO0)
Memory Type ID15-8
DO
(IO1)
7
*
6
5
4
3
2
Capacity ID7-0
1
0
7
6
5
4
3
*
Figure 33. Read JEDEC ID Instruction Sequence
- 56 -
2
1
0
W25Q32BV
7.2.36 Read SFDP Register (5Ah)
The W25Q32BV features a 256-Byte Serial Flash Discoverable Parameter (SFDP) register that contains
information about device configurations, available instructions and other features. The SFDP parameters
are stored in one or more Parameter Identification (PID) tables. Currently only one PID table is specified,
but more may be added in the future. The Read SFDP Register instruction is compatible with the SFDP
standard initially established in 2010 for PC and other applications, as well as the JEDEC standard 1.0
that is published in 2011. Most Winbond SpiFlash Memories shipped after June 2011 (date code 1124
and beyond) support the SFDP feature as specified in the applicable datasheet.
The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction code “5Ah”
followed by a 24-bit address (A23-A0)(1) into the DI pin. Eight “dummy” clocks are also required before the
SFDP register contents are shifted out on the falling edge of the 40th CLK with most significant bit (MSB)
first as shown in Figure 34. For SFDP register values and descriptions, please refer to the Winbond
Application Note for SFDP Definition Table.
Note: 1. A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP Register.
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
Instruction (5Ah)
24-Bit Address
DI
(IO0)
23
22
21
42
43
3
2
1
0
45
46
47
48
*
High Impedance
DO
(IO1)
/CS
31
32
33
34
35
36
37
38
39
40
41
44
49
50
51
52
53
54
55
CLK
Dummy Byte
DI
(IO0)
0
7
6
5
4
3
2
1
0
Data Out 1
DO
(IO1)
High Impedance
*
= MSB
7
6
5
4
*
3
Data Out 2
2
1
0
7
6
5
4
3
2
1
0
7
*
Figure 34. Read SFDP Register Instruction Sequence Diagram
- 57 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.37 Erase Security Registers (44h)
The W25Q32BV offers three 256-byte Security Registers which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and other
important information separately from the main memory array.
The Erase Security Register instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Register Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the three security registers.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0001
0000
Don’t Care
Security Register #2
00h
0010
0000
Don’t Care
Security Register #3
00h
0011
0000
Don’t Care
The Erase Security Register instruction sequence is shown in Figure 35. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of tSE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Security Register Lock Bits LB[3:1] in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the
corresponding security register will be permanently locked, Erase Security Register instruction to that
register will be ignored (See 7.1.9 for detail descriptions).
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
29
30
31
Mode 0
Mode 3
Mode 0
Instruction (44h)
24-Bit Address
DI
(IO0)
DO
(IO1)
9
23
22
2
*
High Impedance
* = MSB
Figure 35. Erase Security Registers Instruction Sequence
- 58 -
1
0
W25Q32BV
7.2.38 Program Security Registers (42h)
The Program Security Register instruction is similar to the Page Program instruction. It allows from one
byte to 256 bytes of security register data to be programmed at previously erased (FFh) memory
locations. A Write Enable instruction must be executed before the device will accept the Program Security
Register Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low
then shifting the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte,
into the DI pin. The /CS pin must be held low for the entire length of the instruction while data is being
sent to the device.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0001
0000
Byte Address
Security Register #2
00h
0010
0000
Byte Address
Security Register #3
00h
0011
0000
Byte Address
The Program Security Register instruction sequence is shown in Figure 36. The Security Register Lock
Bits LB[3:1] in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 7.1.9, 7.2.21 for detail descriptions).
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
32
33
34
35
36
37
38
39
Mode 0
2
1
0
6
5
4
3
2
1
0
2079
3
2078
21
2077
22
*
2076
23
Data Byte 1
2075
24-Bit Address
2074
Instruction (42h)
DI
(IO0)
2073
CLK
7
*
* = MSB
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
2072
/CS
CLK
Mode 0
Data Byte 2
DI
(IO0)
Mode 3
0
7
*
6
5
4
3
Data Byte 3
2
1
0
7
6
5
4
3
*
Data Byte 256
2
1
0
7
6
5
4
3
2
1
0
*
Figure 36. Program Security Registers Instruction Sequence
- 59 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
7.2.39 Read Security Registers (48h)
The Read Security Register instruction is similar to the Fast Read instruction and allows one or more data
bytes to be sequentially read from one of the three security registers. The instruction is initiated by driving
the /CS pin low and then shifting the instruction code “48h” followed by a 24-bit address (A23-A0) and
eight “dummy” clocks into the DI pin. The code and address bits are latched on the rising edge of the CLK
pin. After the address is received, the data byte of the addressed memory location will be shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first. The byte address is
automatically incremented to the next byte address after each byte of data is shifted out. Once the byte
address reaches the last byte of the register (byte FFh), it will reset to 00h, the first byte of the register,
and continue to increment. The instruction is completed by driving /CS high. The Read Security Register
instruction sequence is shown in Figure 37. If a Read Security Register instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Security Register instruction allows clock rates from D.C. to a
maximum of FR (see AC Electrical Characteristics).
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0001
0000
Byte Address
Security Register #2
00h
0010
0000
Byte Address
Security Register #3
00h
0011
0000
Byte Address
/CS
Mode 3
CLK
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
Mode 0
Instruction (48h)
24-Bit Address
DI
(IO0)
23
22
21
42
43
3
2
1
0
45
46
47
48
*
High Impedance
DO
(IO1)
* = MSB
/CS
31
32
33
34
35
36
37
38
39
40
41
44
49
50
51
52
53
54
55
CLK
Dummy Byte
DI
(IO0)
0
7
6
5
4
3
2
1
0
Data Out 1
DO
(IO1)
High Impedance
7
6
5
4
*
3
Data Out 2
2
1
0
7
6
*
Figure 37. Read Security Registers Instruction Sequence
- 60 -
5
4
3
2
1
0
7
W25Q32BV
8.
ELECTRICAL CHARACTERISTICS
8.1 Absolute Maximum Ratings
(1)(2)
PARAMETERS
SYMBOL
Supply Voltage
VCC
Voltage Applied to Any Pin
VIO
Transient Voltage on any Pin
VIOT
Storage Temperature
TSTG
CONDITIONS
RANGE
–0.6 to 4.6
V
Relative to Ground
–0.6 to VCC+0.4
V
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
–65 to +150
°C
(3)
°C
(3)
Lead Temperature
TLEAD
Electrostatic Discharge Voltage
VESD(2)
UNIT
See Note
Human Body Model
–2000 to +2000
V
Notes:
1.This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may
cause permanent damage.
2.JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
3.Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on
restrictions on hazardous substances (RoHS) 2002/95/EU.
8.2 Operating Ranges
PARAMETER
Supply Voltage
Ambient Temperature,
Operating
SYMBOL
VCC(1)
TA
SPEC
CONDITIONS
FR1 = 104MHz
FR2 = 80MHz,
Industrial
fR = 50MHz
UNIT
MIN
MAX
3.0
2.7
3.6
V
-40
+85
°C
Note:
1.VCC voltage during Read can operate across the min and max range but should not exceed ±10% of the programming
(erase/write) voltage.
- 61 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
8.3 Power-Up Power-Down Timing and Requirements(1
SPEC
PARAMETER
SYMBOL
VCC (min) to /CS Low
tVSL(1)
10
Time Delay Before Write Instruction
tPUW
1
10
ms
Write Inhibit Threshold Voltage
VWI
1.0
2.0
V
MIN
(1)
(1)
MAX
µs
Note:
1. These parameters are characterized only.
VCC
VCC (max)
Program, Erase and Write Instructions are ignored
/CS must track VCC
VCC (min)
Reset
State
tVSL
Read Instructions
Allowed
Device is fully
Accessible
VWI
tPUW
Time
Figure 38a. Power-up Timing and Voltage Levels
/CS must track VCC
during VCC Ramp Up/Down
VCC
/CS
Time
Figure 38b. Power-up, Power-Down Requirement
- 62 -
UNIT
W25Q32BV
8.4 DC Electrical Characteristics
SPEC
PARAMETER
SYMBOL
CONDITIONS
Input Capacitance
CIN(1)
VIN = 0V
6
pF
Output Capacitance
Cout(1)
VOUT = 0V
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
5
µA
Current Read Data /
Dual /Quad 1MHz
ICC3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
6/7.5/9
mA
Current Read Data /
Dual /Quad 33MHz
ICC3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7/8
9/10.5/12
mA
Current Read Data /
Dual /Quad 50MHz
ICC3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
7/8/9
10/12/13.5
mA
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz
ICC3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
10/11/12
15/16.5/18
mA
Current Write Status
Register
ICC4
/CS = VCC
8
12
mA
Current Page Program
ICC5
/CS = VCC
20
25
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
mA
Current Chip Erase
ICC7
/CS = VCC
20
25
mA
Input Low Voltage
VIL
VCC x 0.3
V
Input High Voltage
VIH
Output Low Voltage
VOL
IOL = 100 µA
Output High Voltage
VOH
IOH = –100 µA
MIN
TYP
MAX
VCC x 0.7
V
0.2
VCC – 0.2
UNIT
V
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
- 63 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
8.5 AC Measurement Conditions
PARAMETER
SPEC
SYMBOL
Load Capacitance
Input Rise and Fall Times
Input Pulse Voltages
Input Timing Reference Voltages
Output Timing Reference Voltages
MIN
MAX
UNIT
CL
30
pF
TR, TF
5
ns
VIN
0.2 VCC to 0.8 VCC
V
IN
0.3 VCC to 0.7 VCC
V
OUT
0.5 VCC to 0.5 VCC
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Input and Output
Timing Reference Levels
Input Levels
0.8 VCC
0.5 VCC
0.2 VCC
Figure 39. AC Measurement I/O Waveform
- 64 -
W25Q32BV
8.6 AC Electrical Characteristics
SPEC
DESCRIPTION
SYMBOL
ALT
UNIT
MIN
TYP
MAX
Clock frequency for Single/Dual SPI instructions
except for Read Data instruction (03h)
3.0V-3.6V VCC
FR1
fC1
D.C.
104
MHz
Clock frequency for all instructions
except for Read Data instruction (03h)
2.7V-3.6V VCC
FR2
fC2
D.C.
80
MHz
Clock frequency for Read Data instruction (03h)
fR
fC3
D.C.
50
MHz
Clock High, Low Time except Read Data (03h)
tCLH,
tCLL(1)
Clock High, Low Time
for Read Data (03h) instruction
tCRLH,
tCRLL(1)
6
Clock Rise Time peak to peak
tCLCH(2)
0.1
V/ns
Clock Fall Time peak to peak
tCHCL(2)
0.1
V/ns
5
ns
5
ns
4.5
tCSS
ns
ns
/CS Active Setup Time relative to CLK
tSLCH
/CS Not Active Hold Time relative to CLK
tCHSL
Data In Setup Time
tDVCH
tDSU
1.5
ns
Data In Hold Time
tCHDX
tDH
4
ns
/CS Active Hold Time relative to CLK
tCHSH
5
ns
/CS Not Active Setup Time relative to CLK
tSHCH
5
ns
/CS Deselect Time (for Array Read  Array Read)
tSHSL1
tCSH
7
ns
/CS Deselect Time (for Erase or Program  Read
Status Registers)
Volatile Status Register Write Time
tSHSL2
tCSH
40
ns
40
Output Disable Time
tSHQZ(2)
tDIS
7
ns
Clock Low to Output Valid
2.7V-3.6V / 3.0V-3.6V
tCLQV1
tV1
6/5
ns
Clock Low to Output Valid (for Read ID instructions)
2.7V-3.6V / 3.0V-3.6V
tCLQV2
tV2
8.5 / 7.5
ns
Output Hold Time
tCLQX
tHO
/HOLD Active Setup Time relative to CLK
tHLCH
0
ns
5
ns
Continued – next page
- 65 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
8.7 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION
SYMBOL
ALT
UNIT
MIN
TYP
MAX
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
tDP(2)
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
µs
/CS High to Standby Mode with Electronic Signature
Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
/CS High to Power-down Mode
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) (4)
tBP1
20
50
µs
Additional Byte Program Time (After First Byte) (4)
tBP2
2.5
12
µs
Page Program Time
tPP
0.7
3
ms
Sector Erase Time (4KB)
tSE
30
200/400(5)
ms
Block Erase Time (32KB)
tBE1
120
800
ms
Block Erase Time (64KB)
tBE2
150
1,000
ms
Chip Erase Time
tCE
7
15
s
Notes:
1.Clock high + Clock low must be less than or equal to 1/fC.
2.Value guaranteed by design and/or characterization, not 100% tested in production.
3.Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4.For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number
of bytes programmed.
5.Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
- 66 -
W25Q32BV
8.8
Serial Output Timing
/CS
tCLH
CLK
IO
output
8.9
tCLQV
tCLQX
tCLQX
tCLQV
tCLL
MSB OUT
tSHQZ
LSB OUT
Serial Input Timing
/CS
tSHSL
tCHSL
tSLCH
tCHSH
tSHCH
CLK
tDVCH
IO
input
tCHDX
tCLCH
MSB IN
tCHCL
LSB IN
8.10 /HOLD Timing
/CS
tHLCH
tCHHL
tHHCH
CLK
tCHHH
/HOLD
tHLQZ
tHHQX
IO
output
IO
input
8.11 /WP Timing
/CS
tWHSL
tSHWL
/WP
CLK
IO
input
Write Status Register is allowed
- 67 -
Write Status Register is not allowed
Publication Release Date: October 04,2013
Revision I
W25Q32BV
9. PACKAGE SPECIFICATION
8-Pin SOIC 208-mil (Package Code SS)
θ
9.1
Symbol
A
A1
A2
b
C
D
D1
E
E1
e
H
L
y
θ
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
1.75
0.05
1.70
0.35
0.19
5.18
5.13
5.18
5.13
1.95
0.15
1.80
0.42
0.20
5.28
5.23
5.28
5.23
1.27 BSC
7.90
0.65
-----
2.16
0.25
1.91
0.48
0.25
5.38
5.33
5.38
5.33
0.069
0.002
0.067
0.014
0.007
0.204
0.202
0.204
0.202
0.085
0.010
0.075
0.019
0.010
0.212
0.210
0.212
0.210
8.10
0.80
0.10
8°
0.303
0.020
--0°
0.077
0.006
0.071
0.017
0.008
0.208
0.206
0.208
0.206
0.050 BSC
0.311
0.026
-----
7.70
0.50
--0°
- 68 -
0.319
0.031
0.004
8°
W25Q32BV
θ
8-Pin VSOP 208-mil (Package Code ST)
θ
9.2
Millimeters
Inches
Symbol
A
A1
A2
b
c
D
E
E1
e
L
y
θ
Min
Nom
Max
Min
Nom
Max
―
0.05
0.75
0.35
―
0.10
0.80
0.42
0.127 REF
5.28
7.90
5.28
1.27
0.65
―
―
1.00
0.15
0.85
0.48
―
0.002
0.030
0.014
0.039
0.006
0.033
0.019
5.38
8.10
5.38
―
0.80
0.10
8°
0.204
0.303
0.204
―
0.020
―
0°
―
0.004
0.031
0.017
0.005 REF
0.208
0.311
0.208
0.050
0.026
―
―
5.18
7.70
5.18
―
0.50
―
0°
- 69 -
0.212
0.319
0.212
―
0.031
0.004
8°
Publication Release Date: October 04,2013
Revision I
W25Q32BV
9.3
8-Pin PDIP 300-mil (Package Code DA)
Millimeters
Inches
Symbol
Min
Nom
Max
Min
Nom
Max
0.210
A
---
---
5.33
---
---
A1
0.38
---
---
0.015
---
---
A2
3.18
3.30
3.43
0.125
0.130
0.135
D
9.02
9.27
10.16
0.355
0.365
0.400
E
7.62 BSC
0.300 BSC
E1
6.22
6.35
6.48
0.245
0.250
0.255
L
2.92
3.30
3.81
0.115
0.130
0.150
eB
8.51
9.02
9.53
0.335
0.355
0.375
θ°
0°
7°
15°
0°
7°
15°
- 70 -
W25Q32BV
9.4
8-Pad WSON 6x5-mm (Package Code ZP)
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.35
0.40
0.48
0.014
0.016
0.019
C
---
0.20 REF
---
---
0.008 REF
---
D
5.90
6.00
6.10
0.232
0.236
0.240
D2
3.35
3.40
3.45
0.132
0.134
0.136
E
4.90
5.00
5.10
0.193
0.197
0.201
E2
4.25
4.30
4.35
0.167
0.169
0.171
e
1.27 BSC
0.050 BSC
L
0.55
0.60
0.65
0.022
0.024
0.026
y
0.00
---
0.075
0.000
---
0.003
- 71 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
9.5
8-Pad WSON 8x6-mm (Package Code ZE)
Min
Millimeters
Nom
Max
Min
Inches
Nom
Max
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
Symbol
b
0.35
0.40
0.48
0.014
0.016
0.019
C
0.19
0.20
0.25
0.007
0.008
0.010
D
7.90
8.00
8.10
0.311
0.315
0.319
D2
4.60
4.65
4.70
0.181
0.183
0.185
E
5.90
6.00
6.10
0.232
0.236
0.240
E2
5.15
5.20
5.25
0.203
0.205
0.207
e
1.27 BSC
0.050 BSC
L
0.45
0.50
0.55
0.018
0.020
0.022
y
0.00
---
0.050
0.000
---
0.002
- 72 -
W25Q32BV
9.6 16-Pin SOIC 300-mil (Package Code SF)
Min
Millimeters
Nom
Max
Min
Inches
Nom
Max
A
2.36
2.49
2.64
0.093
0.098
0.104
A1
0.10
---
0.30
0.004
---
0.012
A2
---
2.31
---
---
0.091
---
b
0.33
0.41
0.51
0.013
0.016
0.020
Symbol
C
0.18
0.23
0.28
0.007
0.009
0.011
D
10.08
10.31
10.49
0.397
0.406
0.413
E
10.01
10.31
10.64
0.394
0.406
0.419
E1
7.39
7.49
7.59
0.291
0.295
0.299
e
1.27 BSC
0.050 BSC
L
0.38
0.81
1.27
0.015
0.032
0.050
y
---
---
0.076
---
---
0.003
θ
0°
---
8°
0°
---
8°
- 73 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
9.7
24-Ball TFBGA 8x6-mm (Package Code TB, 5x5-1 ball array)
Note:
Ball land: 0.45mm.
Ball Opening: 0.35mm
PCB ball land suggested <= 0.35mm
Symbol
Min
Millimeters
Nom
Max
Min
Inches
Nom
Max
A
---
---
1.20
---
---
0.047
A1
0.25
0.30
0.35
0.010
0.012
0.014
A2
---
0.85
---
---
0.033
---
b
0.35
0.40
0.45
0.014
0.016
0.018
D
7.90
8.00
8.10
0.311
0.315
0.319
D1
E
4.00 BSC
5.90
6.00
0.157 BSC
6.10
0.232
0.236
E1
4.00 BSC
0.157 BSC
SE
1.00 TYP
0.039 TYP
SD
1.00 TYP
0.039 TYP
e
1.00 BSC
0.039 BSC
- 74 -
0.240
W25Q32BV
9.8
24-Ball TFBGA 8x6-mm (Package Code TC, 6x4 ball array)
SYMBOL
Min
MILLIMETERS
Nom
Max
Min
INCHES
Nom
Max
A
---
---
1.20
---
---
0.047
A1
0.25
0.30
0.35
0.010
0.012
0.014
b
0.35
0.40
0.45
0.014
0.016
0.018
D
7.95
8.00
8.05
0.313
0.315
0.317
6.05
0.234
D1
E
5.00 BSC
5.95
6.00
0.197 BSC
0.236
E1
3.00 BSC
0.118 BSC
e
1.00 BSC
0.039 BSC
- 75 -
0.238
Publication Release Date: October 04,2013
Revision I
W25Q32BV
10. ORDERING INFORMATION
W(1) 25Q 32B V xx(2)
W
=
Winbond
25Q
=
SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
32B
=
32M-bit
V =
2.7V to 3.6V
SS = 8-pin SOIC 208-mil; ST = 8-pin SOIC 208-mil
ZP = 8-pad WSON 6x5mm; ZE = 8-pad WSON 8x6mm; DA = 8-pin PDIP 300-mil
SF = 16-pin SOIC 300-mil; TB = 5x5-1balls TFBGA 8x6mm; TC = 6x4-balls TFBGA 8x6mm
I
=
Industrial (-40°C to +85°C)
(3,4)
G
P
=
=
Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
Green Package with Status Register Power-Down & OTP enabled
Notes:
1.
The “W” prefix is not included on the part marking.
2.
Only the 2nd letter is used for the part marking; WSON package type ZP and ZE are not used for the part
marking.
3.
Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and
Reel (shape T) or Tray (shape S), when placing orders.
4.
For shipments with OTP feature enabled, please specify when placing orders.
- 76 -
W25Q32BV
10.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q32BV SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 12digit Product Number for ordering. However, due to limited space, the Top Side Marking on all packages
use an abbreviated 10-digit number.
Part Numbers for Industrial Grade Temperature:
PACKAGE TYPE
SS
SOIC-8 208mil
ST(2)
VSOP-8 208mil
SF
SOIC-16 300mil
DA
PDIP-8 300mil
ZP(1)
WSON-8 6x5mm
ZE(1)(2)
WSON-8 8x6mm
(2)
TB
TFBGA-24 8x6mm
5x5 ball array
TC(2)
TFBGA-24 8x6mm
6x4 ball array
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
W25Q32BVSSIG
W25Q32BVSSIP
W25Q32BVSTIG
W25Q32BVSTIP
W25Q32BVSFIG
W25Q32BVSFIP
W25Q32BVDAIG
W25Q32BVDAIP
W25Q32BVZPIG
W25Q32BVZPIP
W25Q32BVZEIG
W25Q32BVZEIP
25Q32BVSIG
25Q32BVSIP
25Q32BVTIG
25Q32BVTIP
25Q32BVFIG
25Q32BVFIP
25Q32BVAIG
25Q32BVAIP
25Q32BVIG
25Q32BVIP
25Q32BVIG
25Q32BVIP
32M-bit
W25Q32BVTBIG
W25Q32BVTBIP
25Q32BVBIG
25Q32BVBIP
32M-bit
W25Q32BVTCIG
W25Q32BVTCIP
25Q32BVCIG
25Q32BVCIP
32M-bit
32M-bit
32M-bit
32M-bit
32M-bit
32M-bit
Notes:
1. For WSON packages, the package type ZP and ZE are not used in the top side marking.
2. These package types are special order, please contact Winbond for ordering information.
.
- 77 -
Publication Release Date: October 04,2013
Revision I
W25Q32BV
11. REVISION HISTORY
VERSION
A
DATE
03/26/09
PAGE
5~8, 45, 46, 65~71
B
08/20/09
C
09/24/09
D
11/05/09
E
07/08/10
F
04/01/11
G
11/02/11
H
03/26/12
I
10/04/13
53
5,7,9,67,72,73
51, 55
74
63 & 64
64
66-67
69-74
5, 10, 21, 56-58
5, 75 & 76
9, 76-78, 23-69, 47
57-59
5, 9, 71, 76, 78-79
57
61, 76-78
5, 61
DESCRIPTION
New Create Preliminary
Removed SOIC-8 150-mil in Ordering Section.
Removed PDIP-8 300-mil Package
Added WSON-8 8x6-mm Package
Updated package diagram
Updated Suspend/Resume description
Updated UID waveform
Added PDIP-8 300-mil Package
Corrected function diagrams
Removed Preliminary designator
Updated AC/DC parameters
Updated VIL/VIH
Updated AC/DC parameters
Updated Package Diagrams
Added SFDP feature
Added automotive temperature
Added TFBGA package
Updated diagrams
Added /WP timing diagram
Updated Suspend description
Updated SFDP to JEDEC 1.0
Added 5x5 ball array TFBGA, VSOP 208mil
Referred to SFDP definition application note
Updated operating temperature grades
Removed automotive grade and industrial plus grade
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Further more, Winbond products are not intended
for applications wherein failure of Winbond products could result or lead to a situation wherein personal
injury, death or severe property or environmental damage could occur. Winbond customers using or
selling these products for use in such applications do so at their own risk and agree to fully indemnify
Winbond for any damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document
and the products and services described herein at any time, without notice.
- 78 -