TSM10N60 600V N-Channel MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max) ID (A) 600 0.75 @ VGS =10V 10 Features Block Diagram ● Advanced high dense cell design. ● High Power and Current handing capability. Application ● Power Supply. ● Lighting. Ordering Information Part No. TSM10N60CZ C0 TSM10N60CI C0 Package Packing TO-220 ITO-220 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (TC = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit TO-220 TC = 25 C 600 V VGS ±30 V Pulsed Drain Current ID o TC = 100 C b Single Pulsed Avalanche Energy Operating Junction and Storage Temperature Range A 6 a PDTOT c 10 a IDM Total Power Dissipation @ TC=25C Unit VDS o Continuous Drain Current ITO-220 40 166 A 50 EAS 41 TJ, TSTG - 55 to +150 Symbol Limit W mJ o C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA 0.75 Unit 2.5 63 o C/W o C/W Notes a: Current limited by package Notes b: Pulse width limited by the Maximum junction temperature Notes c: L=0.75mH, IAS=10A, VDD=50V, RG=25Ω, Starting Tj=25℃ 1/9 Version: C13 TSM10N60 600V N-Channel MOSFET Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit a Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3.1 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 20 µA Drain-Source On-State Resistance VGS = 10V, ID = 5A RDS(ON) -- 0.61 0.75 Ω Qg -- 45.8 -- Qgs -- 11.5 -- Qgd -- 16 -- Ciss -- 1738 -- Coss -- 195 -- Crss -- 26.3 -- td(on) -- 33.6 -- tr -- 7.4 -- td(off) -- 68 -- tf -- 15.2 -- -- 0.8 1.5 b Dynamic Total Gate Charge VDS = 300V, ID = 10A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Switching nC pF b Turn-On Delay Time Turn-On Rise Time VDD = 300V, RG = 10Ω, Turn-Off Delay Time ID = 10A, VGS = 10V, Turn-Off Fall Time nS a Source-Drain Diode Forward On Voltage IS=10A, VGS=0V VSD Notes a: Pulse test: PW ≤300µS, duty cycle ≤2% Notes b: For DESIGN AID ONLY, not subject to production testing. Notes c: Switching time is essentially independent of operating temperature. 2/9 V Version: C13 TSM10N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/9 Version: C13 TSM10N60 600V N-Channel MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/9 Version: C13 TSM10N60 600V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics Threshold Voltage Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/9 Version: C13 TSM10N60 600V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Capacitance Characteristics Maximum Safe Operating Area - ITO-220 Normalized Thermal Transient Impedance, Junction-to-Ambient 6/9 Version: C13 TSM10N60 600V N-Channel MOSFET TO-220 Mechanical Drawing Unit: Millimeters 7/9 Version: C13 TSM10N60 600V N-Channel MOSFET ITO-220 Mechanical Drawing Unit: Millimeters 8/9 Version: C13 TSM10N60 600V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: C13