Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATIONS • Gigabit Ethernet • Point to Point FEATURES • Optical output power Po = 14.0 mW • Low threshold current lth = 10 mA • Differential efficiency ηd = 0.25 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 6.7 mm R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 Page 1 of 6 NX6414EH Chapter Title PACKAGE DIMENSIONS (UNIT: mm) *2 (φ 5.6) *2 (φ 4.2) *2 1.0±0.1 BOTTOM VIEW *2 (φ 3.55) 110°±2° (0.4) 1 2 4 3 *2 (0.4) *1 Focal Point Δx = ±300 μ m MAX. Δy = ±300 μ m MAX. 6.7±0.5 *2 (3.0) 15.0±1.0 1.2±0.1 3.87±0.3 φ 2.0 PIN CONNECTIONS 1 (Case) Reference Plane LD 4 2 PD 3 4– φ 0.45 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 Page 2 of 6 NX6414EH Chapter Title ORDERING INFORMATION Part Number NX6414EH Package Pin Connections 1 4-pin CAN with ball lens cap LD 4 2 PD 3 Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 Page 3 of 6 NX6414EH Chapter Title ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 20 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10.0 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % ELECTRO-OPTICAL CHARACTERISTICS (TC = −40 to +85°C, unless otherwise specified) Parameter Symbol Conditions Operating Voltage Vop Po = 14.0 mW Threshold Current Ith TC = 25°C MIN. 5 TYP. MAX. Unit 1.1 1.6 V 10 15 mA 3 50 Differential Efficiency ηd Po = 14.0 mW 0.14 0.6 W/A Peak Emission Wavelength λp CW, Po = 14.0 mW 1 480 1 500 nm Side Mode Suppression Ratio SMSR Po = 14.0 mW 30 45 dB 6.2 6.7 7.2 mm Focal Distance Df Rise Time tr Ib = Ith, 10-90% 0.1 0.2 ns Fall Time tf Ib = Ith, 90-10% 0.1 0.2 ns Monitor Current Im VR = 1.5 V, Po = 14.0 mW 500 1 200 μA Monitor Dark Current ID VR = 5 V 100 nA γ Im = const. (@ Po = 14.0 mW, TC = 25°C) 1.0 dB *1 Tracking Error *1 150 −1.0 Tracking Error: γ Po γ = 10 log (mW) Po [dB] 14.0 TC = 25°C 14.0 TC = –40 to +85°C Po 0 R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 Im Im (mA) Page 4 of 6 NX6414EH Chapter Title REFERENCE Document Name Opto-Electronics Devices Pamphlet *1 *1 Document No. PX10160E Published by the former NEC Electronics Corporation. R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 Page 5 of 6 NX6414EH Chapter Title SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 Page 6 of 6 Revision History Rev. 1.00 Date Jun 10, 2011 NX6414EH Data Sheet Description Summary Page − First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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