TMA56G-L Triac (Bidirectional Triode Thyristor)

TMA56G-L
Triac (Bidirectional Triode Thyristor)
Features and Benefits
Description
▪ Exceptional reliability
▪ Small SIP package with heatsink mounting for high
thermal dissipation and long life
▪ VDRM of 600 V
▪ 5 ARMS on-state current
▪ Uniform switching
This Sanken triac (bidirectional triode thyristor) is designed
for AC power control, providing reliable, uniform switching
for full-cycle AC applications.
Package: 3-pin SIP (TO-220)
Applications
In comparison with other products on the market, the
TMA56G-L provides greater peak nonrepetitive offstate voltage, VDSM (700 V). In addition, commutation
dv/dt and (dv/dt)c are improved.
▪ Residential and commercial appliances: vacuum cleaners,
rice cookers, TVs, home entertainment
▪ White goods: washing machines
▪ Office automation power control, photocopiers
▪ Motor control for small tools
▪ Temperature control, light dimmers, electric blankets
▪ General use switching mode power supplies (SMPS)
Not to scale
Typical Applications
Halogen
Lamp
Gate
Controller
Heater control
(for example, LBP. PPC, MFP)
28105.29
Two-phase motor control
(for example, washing machine)
SANKEN ELECTRIC CO., LTD.
http://www.sanken-ele.co.jp/en/
In-rush current control
(for example, SMPS)
TMA56G-L
Triac (Bidirectional Triode Thyristor)
Selection Guide
Part Number
TMA56G-L
Package
Packing
3-pin fully molded SIP with heatsink mount
50 pieces per tube
Absolute Maximum Ratings
Rating
Units
Peak Repetitive Off-State Voltage
Characteristic
Symbol
VDRM
RGREF = ∞
600
V
Peak Non-Repetitive Off-State Voltage
VDSM
RGREF = ∞
700
V
RMS On-State Current
IT(RMS)
50/60 Hz full cycle sine wave,
total Conduction angle (α+) + (α–) = 360°,
TC = 111°C
5
A
f = 60 Hz
53
A
Surge On-State Current
ITSM
50
A
12.5
A2 • s
A/μs
I2t Value for Fusing
Notes
Full cycle sine wave, peak value, non-repetitive,
initial TJ = 25°C
f = 50 Hz
I2t
Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 50 A
di/dt
IT = IT(RMS) × √2, VD = VDRM × 0.5, f ≤ 60 Hz, tgw ≥ 10 μs,
tgr ≤ 250 ns, Igp ≥ 60 mA (refer to Gate Trigger Current diagram)
25
Peak Gate Current
IGM
f ≥ 50 Hz, duty cycle ≤ 10%
2
A
Peak Gate Power Dissipation
PGM
f ≥ 50 Hz, duty cycle ≤ 10%
5
W
PGM(AV)
0.5
W
Junction Temperature
TJ
–40 to 125
ºC
Storage Temperature
Tstg
–40 to 125
ºC
Critical Rising Rate of On-State Current
Average Gate Power Dissipation
Thermal Characteristics May require derating at maximum conditions
Characteristic
Symbol
Package Thermal Resistance
(Junction to Case)
RθJC
Test Conditions
For AC
Value
Units
2.5
ºC/W
Pin-out Diagram
T2
Terminal List Table
G
T1
1 2 3
Number
Name
1
T1
Main terminal, gate referenced
Function
2
T2
Main terminal connect to signal side
3
G
Gate control
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, TA, of 25°C, unless otherwise stated.
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Off-State Leakage Current
IDRM
On-State Voltage
VTM
Test Conditions
Min.
Typ.
Max.
Unit
VD = VDRM, TJ = 125°C, RGREF = ∞ using test circuit 1
–
–
2.0
mA
VD = VDRM, TJ = 25°C, RGREF = ∞ using test circuit 1
–
–
100
μA
IT = 7 A, TJ = 25°C
–
–
1.5
V
–
–
1.5
V
V
Quadrant I: T2+, G+
Gate Trigger Voltage
VGT
Gate Trigger Current
Quadrant II: T2+, G–
IGT
VD = 12 V, RL = 20 Ω, TJ = 25°C
–
–
1.5
Quadrant III: T2–, G–
–
–
1.5
V
Quadrant I: T2+, G+
–
–
20
mA
–
–
20
mA
–
–
20
mA
0.2
–
–
V
5
–
–
V/μs
100
–
–
V/μs
Quadrant II: T2+, G–
VD = 12 V, RL = 20 Ω, TJ = 25°C
Quadrant III: T2–, G–
Gate Non-trigger Voltage
VGD
Critical Rising Rate of
Off-State Voltage during
Commutation*
(dv/dt)c
Critical Rising Rate of
Off-StateVoltage
VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C
VD = 400 V, (di/dt)c = –2.5 A/ms, ITP = 2 A, TJ = 125°C
dv/dt
VD = VDRM × 0.66, RGREF = ∞ using test circuit 1, TJ = 125°C
*Where ITP is the peak current through T2 to T1.
Test Circuit 1
Gate Trigger Characteristics
+T2
Quadrant II
Quadrant I
T2 [ + ]
T2
RGREF =
∞
T2 [ + ]
G[–]
G
G[+]
T1 [ – ]
T1
–IGT
T1 [ – ]
T2 [ – ]
T2 [ – ]
G[–]
G[+]
T1 [ + ]
Gate Trigger Current
+IGT
T1 [ + ]
Quadrant III
–T2
Quadrant IV
Polarities referenced to T1
tgr
igp
tgw
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
Commutation Timing Diagrams
Q4
Supply VAC
Q
A
A = Conduction angle
VGT
VGATE
Q
ITSM
On-State
Currrent
Q
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
Performance Characteristics at TA = 25°C
70
100
f = 50 Hz
full cycle sine wave
total Conduction angle
(A+) + (A–) = 360°
initial TJ = 125°C
60
TJ = 125°C
50
Surge On-State
Current versus
Quantity of
Cycles
TJ = 25°C
1
40
ITSM (A)
Maximum On-State
Current versus
Maximum On-State
Voltage
IT (max) (A)
10
30
20
10
0.1
0.6
1.0
1.4
1.8
8
6
3.8
0
4.2
1
10
Quantity of Cycles
100
150
full cycle sine wave
total Conduction angle
(A+) + (A–) = 360°
125
111°C
100
5
Case Temperature
versus On-State
RMS Current
4
TC (°C)
PT(AV) (W)
3.4
full cycle sine wave
total Conduction angle
(A+) + (A–) = 360°
7
On-State Average
Power Dissipation
versus Maximum
On-State
RMS Current
2.2 2.6 3.2
VT (max) (V)
75
3
50
2
25
1
0
0
1
2
3
4
5
IT(RMS)(max) (A)
6
0
7
0
1
2
3
4
IT(RMS) (A)
5
6
2.0
100
Gate Voltage
versus
Gate Current
VG (V)
10
VGM = 10 V
PGM
=5W
VGT (–40°C)
=2V
VGT (25°C)
= 1.5 V
1
IGT (–40°C)
= 70 mA
IGT (25°C) = 20 mA
Proportional Change
of Typical
Trigger Voltage
versus
Junction Temperature
PG(AV)
= 0.5 W
VGT (TJ) (V) / VGT (TJ = 25°C ) (V)
1.8
IGM = 2 A
100
IG (mA)
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGD = 0.2 V
0.1
10
1.6
0
–60 –40 –20
10 000
0
20
40
60
80 100 120 140
TJ (°C)
10
10
Quadrant III (T2–, G–)
1
Quadrant I (T2+, G+)
Quadrant II (T2+, G–)
0.1
–60 –40 –20
0
20
40
60
80 100 120 140
Proportional Change
of Typical
Holding Current
versus
Junction Temperature
IH (TJ) (A) / IH (TJ = 25°C ) (A)
Proportional Change
of Typical
Trigger Current
versus
Junction Temperature
IGT (TJ) (A) / IGT (TJ = 25°C ) (A)
RGREF = 1 kΩ
1
0.1
–60 –40 –20
TJ (°C)
0
20
40
60
80 100 120 140
TJ (°C)
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
Transient Thermal Impedence versus Triac Voltage Pulse Duration
For AC
ZQJC (°C/W)
10
1
0.1
0.001
0.01
0.1
1
10
100
QT (s)
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6
TMA56G-L
Triac (Bidirectional Triode Thyristor)
TO-220 Package Outline Drawing
5.5 ±0.2
2.8 ±0.2
(1.3)
(1.7)
9.9 ±0.3
(8.7)
Exposed
heatsink pad
1.3 ±0.2
XXXXX
XXXXXXXX
18.95 MAX
XXXXX
15.9 ±0.3
Branding
Area
9.2 ±0.3
Ø3.6 ±0.2
(3)
2.4 ±0.2
0.5
+0.15
–0.1
13.1 ±0.5
View A
View B
1.4 ±0.15
1.27 ±0.15
0.8 ±0.15
View C
View A
2.54 ±0.2
Terminal dimension at case surface
10 ±0.2
1
2
3
0.6 MAX
View B
Terminal core material: Cu
Terminal treatment: Sn plating
Package: TO-220
Dimensions in millimeters
0.6 MAX
View C
Branding codes (exact appearance at manufacturer discretion):
1st line left, lot:
YM
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
1st line right, lot:
DDR
Where: DD is the date
R is a tracking letter
2nd line, type: TMA56G
Leadframe plating Pb-free. Device
meets RoHS requirements.
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
Because reliability can be affected adversely by improper
storage environments and handling methods, please observe
the following cautions.
Cautions for Storage
• Ensure that storage conditions comply with the standard
temperature (5°C to 35°C) and the standard relative
humidity (around 40% to 75%); avoid storage locations
that experience extreme changes in temperature or
humidity.
• Avoid locations where dust or harmful gases are present
and avoid direct sunlight.
• Reinspect for rust on leads and solderability of the
products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and
other standard test periods, protect the products from
power surges from the testing device, shorts between
the product pins, and wrong connections. Ensure all test
parameters are within the ratings specified by Sanken for
the products.
Remarks About Using Silicone Grease with a Heatsink
• When silicone grease is used in mounting the products on
a heatsink, it shall be applied evenly and thinly. If more
silicone grease than required is applied, it may produce
excess stress.
• Volatile-type silicone greases may crack after long periods
of time, resulting in reduced heat radiation effect. Silicone
greases with low consistency (hard grease) may cause
cracks in the mold resin when screwing the products to a
heatsink.
Our recommended silicone greases for heat radiation
purposes, which will not cause any adverse effect on the
product life, are indicated below:
Type
Suppliers
G746
Shin-Etsu Chemical Co., Ltd.
YG6260
Momentive Performance Materials Inc.
SC102
Dow Corning Toray Co., Ltd.
Cautions for Mounting to a Heatsink
• When the flatness around the screw hole is insufficient, such
as when mounting the products to a heatsink that has an
extruded (burred) screw hole, the products can be damaged,
even with a lower than recommended screw torque. For
mounting the products, the mounting surface flatness should
be 0.05 mm or less.
•
Please select suitable screws for the product shape. Do not
use a flat-head machine screw because of the stress to the
products. Self-tapping screws are not recommended. When
using self-tapping screws, the screw may enter the hole
diagonally, not vertically, depending on the conditions of hole
before threading or the work situation. That may stress the
products and may cause failures.
• Recommended screw torque: 0.490 to 0.686 N●m (5 to 7
kgf●cm).
• For tightening screws, if a tightening tool (such as a driver)
hits the products, the package may crack, and internal
stress fractures may occur, which shorten the lifetime of
the electrical elements and can cause catastrophic failure.
Tightening with an air driver makes a substantial impact.
In addition, a screw torque higher than the set torque can
be applied and the package may be damaged. Therefore, an
electric driver is recommended.
When the package is tightened at two or more places, first
pre-tighten with a lower torque at all places, then tighten
with the specified torque. When using a power driver, torque
control is mandatory.
Soldering
• When soldering the products, please be sure to minimize
the working time, within the following limits:
260±5°C 10±1 s
(Flow, 2 times)
380±10°C 3.5±0.5 s (Soldering iron, 1 time)
• Soldering should be at a distance of at least 1.5 mm from
the body of the products.
Electrostatic Discharge
• When handling the products, the operator must be
grounded. Grounded wrist straps worn should have at
least 1 MΩ of resistance from the operator to ground to
prevent shock hazard, and it should be placed near the
operator.
• Workbenches where the products are handled should be
grounded and be provided with conductive table and floor
mats.
• When using measuring equipment such as a curve tracer,
the equipment should be grounded.
• When soldering the products, the head of soldering irons
or the solder bath must be grounded in order to prevent
leak voltages generated by them from being applied to the
products.
• The products should always be stored and transported in
Sanken shipping containers or conductive containers, or
be wrapped in aluminum foil.
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
M3 Screw
Device
Insulating Plate
Heatsink
Flat Washer
Typical Mounting
Configuration
Split Washer
M3 Nut
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TMA56G-L
Triac (Bidirectional Triode Thyristor)
• The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the
latest revision of the document before use.
• Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or
any other rights of Sanken or any third party which may result from its use.
• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device
failure or malfunction.
• Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and
its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever
long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales
representative to discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
• In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the
degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the
load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general,
derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such
as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses,
instantaneous values, maximum values and minimum values must be taken into consideration.
In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of
derating of junction temperature affects the reliability significantly.
• When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically
or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance
and proceed therewith at your own responsibility.
• Anti radioactive ray design is not considered for the products listed herein.
• Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network.
• The contents in this document must not be transcribed or copied without Sanken's written consent.
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