SEGC10DH THRU SEGC10MH High Efficient Rectifier

ZOWIE
High Efficient Rectifier
(200V~1000V / 1.0A)
SEGC10DH THRU SEGC10MH
FEATURES
OUTLINE DIMENSIONS
Halogen-free type
Compliance to RoHS product
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low power loss , High efficiency
High current capability
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
1.50
Typ.
Case : 1206-S
1.60 ± 0.1
*
*
*
*
*
*
*
*
Unit : mm
3.40 ± 0.1
40
R0.
0.70 ± 0.2
0.70 ± 0.2
APPLICATION
0.96 ± 0.20
* General purpose rectification
* Surge absorption
Equivalent to SOD-123
MECHANICAL DATA
MARKING
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Cathode Band, Laser marking
Weight : 0.012 gram
Cathode mark
Amps class
(1.0Amps)
10
ED.
Halogen-free type
Voltage class
Series code
PACKING
(High Efficient Rectifier)
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
Voltage class : D = 200V, G = 400V, J = 600
K = 800V, M = 1000V
o
Absolute Maximum Ratings (Ta = 25 C)
SEGC10
ITEM
Symbol
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current
IFSM
Rating for fusing ( t<8.3ms)
I2t
Reverse recovery time
Trr
Operating storage temperature Range
ITEM
Forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Conditions
DH
GH
JH
KH
MH
200
400
600
800
1000
8.3ms single half sine-wave
IF = 0.5A, IR = 1.0A, Irr = 0.25A
Symbol
V
1.0
A
15
A
0.9
A2sec
50
Tj,TSTG
Unit
75
nS
o
-65 to +175
Type
Min.
Typ.
Max.
SEGC10DH
SEGC10GH
SEGC10JH
SEGC10KH
SEGC10MH
-
0.95
1.00
-
1.10
1.25
-
1.50
1.70
-
1.50
1.70
-
1.50
1.70
VR = Max. VRRM , Ta = 25 C
-
0.10
5
uA
VR = 4V, f = 1.0 MHz
-
9
-
pF
Rth(JA)
Junction to ambient (NOTE)
-
123
-
Rth(JL)
Junction to lead (NOTE)
-
45
-
VF
IRRM
Cj
Conditions
C
IF = 1.0A
o
Unit
V
o
C/W
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. 1
2013/09
ZOWIE
SEGC10DH THRU SEGC10MH
FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
20
8.3ms SINGLE HALF SINE-WAVE
RESISTIVE OR
INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
1.0
0.5
0
15
10
5
0
0
25
50
75
100
125
150
1
175
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
o
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10.00
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
(200V~1000V / 1.0 A)
1.00
o
TJ=25 C
0.10
o
TJ=150 C
10.0
o
TJ=125 C
1.0
o
TJ=25 C
0.10
SEGC10DH
SEGC10GH
SEGC10JH~SEGC10MH
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
TRANSIENT THERMAL IMPEDANCE( C/W)
80
100
120
140
1000
o
100
JUNCTION CAPACITANCE, pF
60
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
60
40
20
o
TJ = 25 C
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
REVERSE VOLTAGE, VOLTS
REV. 1
40
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
20
40
100
100
10
1
0.01
0.10
1.0
10
100
t , PULSE DURATION, sec
2013/09