ZOWIE High Efficient Rectifier (200V~1000V / 1.0A) SEGC10DH THRU SEGC10MH FEATURES OUTLINE DIMENSIONS Halogen-free type Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage Low power loss , High efficiency High current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-0 1.50 Typ. Case : 1206-S 1.60 ± 0.1 * * * * * * * * Unit : mm 3.40 ± 0.1 40 R0. 0.70 ± 0.2 0.70 ± 0.2 APPLICATION 0.96 ± 0.20 * General purpose rectification * Surge absorption Equivalent to SOD-123 MECHANICAL DATA MARKING Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Cathode Band, Laser marking Weight : 0.012 gram Cathode mark Amps class (1.0Amps) 10 ED. Halogen-free type Voltage class Series code PACKING (High Efficient Rectifier) * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton Voltage class : D = 200V, G = 400V, J = 600 K = 800V, M = 1000V o Absolute Maximum Ratings (Ta = 25 C) SEGC10 ITEM Symbol Repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current IFSM Rating for fusing ( t<8.3ms) I2t Reverse recovery time Trr Operating storage temperature Range ITEM Forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance Conditions DH GH JH KH MH 200 400 600 800 1000 8.3ms single half sine-wave IF = 0.5A, IR = 1.0A, Irr = 0.25A Symbol V 1.0 A 15 A 0.9 A2sec 50 Tj,TSTG Unit 75 nS o -65 to +175 Type Min. Typ. Max. SEGC10DH SEGC10GH SEGC10JH SEGC10KH SEGC10MH - 0.95 1.00 - 1.10 1.25 - 1.50 1.70 - 1.50 1.70 - 1.50 1.70 VR = Max. VRRM , Ta = 25 C - 0.10 5 uA VR = 4V, f = 1.0 MHz - 9 - pF Rth(JA) Junction to ambient (NOTE) - 123 - Rth(JL) Junction to lead (NOTE) - 45 - VF IRRM Cj Conditions C IF = 1.0A o Unit V o C/W NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 1 2013/09 ZOWIE SEGC10DH THRU SEGC10MH FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 20 8.3ms SINGLE HALF SINE-WAVE RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 0.5 0 15 10 5 0 0 25 50 75 100 125 150 1 175 10 100 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT o 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 10.00 IINSTANTANEOUS FORWARD CURRENT, AMPERES (200V~1000V / 1.0 A) 1.00 o TJ=25 C 0.10 o TJ=150 C 10.0 o TJ=125 C 1.0 o TJ=25 C 0.10 SEGC10DH SEGC10GH SEGC10JH~SEGC10MH 0.01 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 TRANSIENT THERMAL IMPEDANCE( C/W) 80 100 120 140 1000 o 100 JUNCTION CAPACITANCE, pF 60 FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 60 40 20 o TJ = 25 C 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 REVERSE VOLTAGE, VOLTS REV. 1 40 PERCENT OF RATED PEAK REVERSE VOLTAGE,% 20 40 100 100 10 1 0.01 0.10 1.0 10 100 t , PULSE DURATION, sec 2013/09