MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551 160 180 10 , WEITRON http://www.weitron.com.tw 6.0 MMBT5550 MMBT5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Min Symbol Characteristics Max Unit 100 50 100 50 nAdc OFF CHARACTERISTICS I CBO Collector Cutoff Current ( VCB 100 Vdc, I E= 0 ) ( VCB 120 Vdc, I E= 0 ) MMBT5550 MMBT5551 MMBT5550 MMBT5551 ( VCB 100 Vdc, I E= 0 ,TA= 100 C ) ( VCB 100 Vdc, IE= 0 , TA= 100 C ) Emitter Cutoff Current ( VEB 4.0 Vdc, I C=0 ) I EBO 50 uAdc nAdc ON CHARACTERISTICS DC Current Gain (IC=1.0 mAdc, VCE=5.0 Vdc) hFE - MMBT5550 MMBT5551 60 80 - (IC=10 mAdc, VCE=5.0 Vdc) MMBT5550 MMBT5551 60 80 250 250 (IC=50 mAdc, VCE=5.0 Vdc) MMBT5550 MMBT5551 20 30 - VCE(sat) Collector-Emitter Saturation Voltage Vdc (IC=10 mAdc, IB=1.0mAdc) Both Types - 0.15 (IC=50 mAdc, IB=5.0mAdc) MMBT5550 MMBT5551 - 0.25 0.20 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) Both Types - 1.0 (IC=50 mAdc, IB=5.0mAdc) MMBT5550 MMBT5551 - 1.2 1.0 1. FR-5=1.0 x 0.75 x 0.062 in 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0% WEITRON http://www.weitron.com.tw MMBT5550 MMBT5551 h FE , DC CURRENT GAIN 500 300 VCE = 1.0 V VCE = 5.0 V TJ = 125 C 200 25 C 100 -55 C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 10 I C , COLLECTOR CURRENT (mA) 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) FIG.1 DC Current Gain 1.0 0.9 0.8 0.7 IC = 1.0 m A 0.6 10 m A 100 m A 30 m A 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 I B , BASE CURRENT (mA) 2.0 5.0 10 20 50 FIG. 2 Collector Saturation Region 100 1.0 VCE = 30 V TJ = 125 C 10-1 -2 10 I C = I CES 75 C -3 REVERSE 10 FORWARD 25 C -4 10 10 V, VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) 1 10 TJ = 25 C 0.8 0.6 VBE(sat ) @ I C / I B = 10 0.4 0.2 VCE(sat )@ IC / I B = 10 -5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE , BASE-EMITTER VOLTAGE (VOLTS) FIG. 3 Collector Cut-Off Region WEITRON http://www.weitron.com.tw 0.6 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC , COLLECTOR CURRENT (mA) FIG. 4 "On" Voltages 100 MMBT5550 MMBT5551 V , TEMPERA TURE COEFFICIENT (mV/ C) 2.5 2.0 TJ = - 55 C to +135 C 1.5 1.0 0.5 Vin 0 - 0.5 - 1.0 - 1.5 0.20.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC , COLLECTOR CURRENT (mA) 100 Vout 5.1 k 100 1N914 1000 TJ= 25 C I C / I B = 10 TJ = 25 C 500 tr @ VCC= 120 V 300 t , TIM E (n s) C, CAPACIT ANCE (p F) RB 20 10 Cibo 7.0 5.0 Cobo 3.0 200 t r@ VCC = 30 V 100 50 t d@ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 10 0.20.3 0.5 VR, REVERSE VOLTAGE (VOLTS) 20 30 50 1.0 2.03.0 5.0 10 I C , COLLECTOR CURRENT (mA) FIG. 7 Capacitances 5000 FIG. 8 Turn-On Time t f @ VCC= 120 V 3000 t , TIME (n s) 2000 IC / I B = 10 TJ = 25 C t f @ VCC = 30 V 1000 500 300 200 t s@ VCC = 120 V 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) FIG.9 Turn-Off Time WEITRON http://www.weitron.com.tw RC FIG. 6 Switching Time Test Circuit 30 1.0 0.2 0.3 3.0 k Values Shown are for IC@ 10 mA FIG.5 Temperature Coefficients 100 70 50 0.25mF tr ,t f 10 n s Vin DUTY CYCLE = 1.0% - 2.0 - 2.5 0.1 100 10 ms INPUT PULSE q VB for VBE(sat) VCC 30 V VBB -8.8V 10.2 V q VC for VCE(sat) 100 200 100 200 MMBT5550 MMBT5551 SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M