S10U45S - Thinki Semiconductor Co.,Ltd.

S10U45S
Pb Free Plating Product
®
Pb
S10U45S
10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier
●
IF(AV) 10A
●
VRRM
45V
■ Applications
.132(3.36)
.039(1.00)
.031(0.80)
●
Switching Power Supply Industry
●
Photovoltaic Solar cell Protection
Schottky Rectifier
Mounting Pad Layout
.045(1.15)
.041(1.05)
.014(0.35)
.010(0.25)
.055(1.40)
Low Power loss, High efficiency
.260(6.60)
.252(6.40)
●
.161(4.10)
.154(3.90)
.075(1.90)
.067(1.70)
Bottom
.055(1.40)
.075(1.90)
.071(1.80)
LEFT PIN
RIGHT PIN
.191(4.86)
High surge Forward current capability
.215(5.40)
.205(5.20)
●
Dimensions in inches and (millimeters)
TO-277/POWERDI5
.033(0.85)
■ Features
.072(1.84)
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
■ Limiting Values(Absolute Maximum Rating)
Item
Symbol
Repetitive Peak Reverse Voltage
VRRM
V
Average Rectified Output Current
Io
A
60HZ sine wave,
IFSM
A
60HZ sine wave, 1 cycle, Ta=25℃
275
Current Squared Time
I2t
A2s
1ms≤t<8.3ms Tj=25℃
313
Storage Temperature
Tstg
℃
Junction Temperature
Tj
℃
Surge(Non-repetitive)Forward
Current
Unit
Conditions
S10U45S
45
R- load, Ta=25℃
10
-55 ~ +150
IN DC Forward Mode-Forward Operations
without reverse bias, t ≤1 h (Fig. 1)① ,
-55~+200
■ Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Symbol
VFM
Peak Forward Voltage
Peak Reverse Current
IRRM1
Unit
V
mA
IRRM2
Thermal Resistance(Typical)
RθJ-L
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
℃/W
VRM =VRRM
Test Condition
Max
I FM =10.0A
0.47
Tj=25℃
0.3
Tj=100℃
15
Between Junction and Lead
10
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S10U45S
®
FIG2:Surge Forward Current Capadility
FIG1: IF(AV)--TL Derating
10
IFSM(A)
Io(A)
Rating and Characteristic Curves
9
8
7
360
8.3ms Single Half S nce-Wave
JEDEC Method
300
240
6
180
5
4
120
3
2
60
1
0
0
50
0
100
150
TL(℃)
IRRM(mA)
IF(A)
FIG3:Instantaneous Forward Voltage
100
10
2
1
20
100
Number of Cycles
FIG4:Typical Reverse Characteristics
100
10
Tj=100℃
10
1.0
Ta=25℃
1.0
0.1
0.1
0
0.2
0.4
0.6
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
0.8
1.0
VF(V)
0.01
Tj=25℃
0
20
40
60
80
100
VRM(%)
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