SKKT 106, SKKT 106B, SKKH 106 THYRISTOR ® SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / 966 4"66 4#66 4>66 / 566 4$66 4=66 4!66 2+*/ 3 46! * ( 4567 + 3 5# 8&) .::+ 46!;65 .::+ 46!<65 .:: 46!;65 .::+ 46!;4$ .::+ 46!<4$ .:: 46!;4$ .::+ 46!;4= .::+ 46!<4= .:: 46!;4= .::+ 46!;4! .::+ 46!<4! .:: 46!;4! 4966 4566 .::+ 46!;45 SKKT 106B SKKH 106 Features !" #"$ Typical Applications* %& 1) ( ) *& + ( , ) - ( ) . SKKT 1 .:: 46!;45 Symbol Conditions Values Units 4567 + 3 5# (466) 8&7 -";456?7 + 3 "# 8&7 <$ ; <! -4!;$66?7 + 3 "# 8&7 <$ ; <! 46! (>5 ) 4=# ; 456 496 ;$!6 * * * 201. -";456?7 + 3 "# 8&7 @4 ; @" $66 ; " A 4=6 * 2+.1 +, 3 $# 8&7 46 +, 3 4"6 8&7 46 +, 3 $# 8&7 5" 46 $$#6 4966 $#666 * * *B +, 3 4"6 8&7 5" 46 SKKT 106 .::+ 46!<45 2+*/ 2% B 2+01. 3 456 * ( , ) 45666 *B 4!# 69 $ / / D $6 * 4 F /+ /+(+C) + +, 3 $# 8&7 2+ 3 "66 * +, 3 4"6 8& +, 3 4"6 8& 2%%7 20% +, 3 4"6 8&7 /0% 3 /0017 /%% 3 /%01 +, 3 $# 8&7 2E 3 4 *7 E; 3 4 *;F /% 3 6!> A /%01 $ F (;) (,;) G 2 +, 3 4"6 8& +, 3 4"6 8& +, 3 4"6 8& +, 3 $# 8&7 ; 4#6 4666 466 4#6 ; $#6 *;F /;F F * 2 +, 3 $# 8&7 0E 3 "" D7 ; "66 ; !66 * /E+ 2E+ /E% +, 3 $# 8&7 +, 3 $# 8&7 +, 3 4"6 8&7 " 4#6 6$# / * / 2E% +, 3 4"6 8&7 0(H) 0(H) 0(H) 0(H) +, 7 ; 4567 ; 4$67 ; ; + ! * 6$5 ; 64= 6" ; 64# 6"$ ; 64! 6$ ; 64 H =6 I 4"6 :;@ :;@ :;@ :;@ 8& H =6 I 4$# 8& "!66 ; "666 # L 4# M4) " L 4# M # A 954 /J N N ;B 9# / 1 1 #6 7 7 4 ; 4 K & .::+ .::+ < * =! * =5 .:: * => SKKH 09-03-2004 NOS © by SEMIKRON BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 09-03-2004 NOS © by SEMIKRON SKKT 106, SKKT 106B, SKKH 106 THYRISTOR Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 09-03-2004 NOS © by SEMIKRON BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm & * =5 .::+ < & * => .:: .::+ .::+ < & * =! (.::+) * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 4 09-03-2004 NOS © by SEMIKRON