ER1AF THRU ER1JF

ER1AF THRU ER1JF
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts
SMAF
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
Glass passivated chip junction
Cathode Band
Top View
0.110(2.80)
0.094(2.40)
0.059(1.50)
0.051(1.30)
0.144(3.65)
0.128(3.25)
0.012(0.30)
0.006(0.15)
0.055(1.40)
0.043(1.10)
Forward Current - 1.0 Ampere
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
Case: JEDEC SMAF molded plastic body over passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0018 ounce, 0.064 grams
0.189(4.80)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
ER1AF ER1BF ER1CF ER1DF ER1EF ER1GF ER1JF
VRRM
VRMS
VDC
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
UNITS
VOLTS
VOLTS
VOLTS
I(AV)
1.0
Amp
IFSM
30.0
Amps
VF
0.95
IR
1.25
5.0
50.0
1.7
Volts
µA
trr
35
ns
CJ
15.0
60.0
-50 to +150
pF
C/W
C
RθJA
TJ,TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.4
0.2
0
0
25
50
75
100
125
150
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
RATINGS AND CHARACTERISTIC CURVES ER1AF THRU ER1JF
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
10
175
5.0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
AMBIENT TEMPERATURE, C
20
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
ER1AF-ER1DF
ER1EF-ER1GF
ERS1JF
0.01
0
0.4
0.8
1.2
1.6
1.8
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1,000
100
10
TJ=100 C
1
0.1
TJ=25 C
0.01
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
TJ=25 C
10
0
20
40
60
80
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
1
0.1
1.0
10
100
PERCENT OF PEAK REVERSE VOLTAGE,%
TRANSIENT THERMAL IMPEDANCE,
C/W
JUNCTION CAPACITANCE, pF
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
100
NUMBER OF CYCLES AT 60 Hz
100
REVERSE VOLTAGE,VOLTS
MDD ELECTRONIC
t,PULSE DURATION,sec.
100