SS52BF THRU SS520BF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Forward Current - 5.0 Ampere Reverse Voltage - 20 to 200 Volts SMBF FEATURES Cathode Band Top View 0.146(3.70) 0.138(3.50) Metal silicon junction,majority carrier conduction For surface mounted applications Low power loss,high efficiency High forward surge current capability For use in low voltage,high frequency inverters, free wheeling,and polarity protection applicatlons 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) 0.051(1.30) 0.039(1.0) MECHANICAL DATA Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS SS52BF SS54BF Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range VRRM VRMS VDC SS56BF SS58BF SS510BF S52B S54B S56B S58F S510B 20 14 20 40 28 40 60 42 60 80 56 80 100 70 100 SS515BF SS520BF S515B S520B 150 105 150 200 140 200 UNITS VOLTS VOLTS VOLTS I(AV) 5.0 Amp IFSM 150.0 Amps VF 0.45 IR CJ RθJA TJ, TSTG 800 0.55 0.70 0.85 1.0 50 500 40.0 -50 to +125 -50 to +150 0.95 Volts mA pF C/W C C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES SS52BF THRU SS520BF Fig.2 Typical Reverse Characteristics Average Forward Current (A) 6.0 100LFM 5.0 4.0 3.0 2.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas 1.0 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Lead Temperature (°C) 60 100 80 Fig.4 Typical Junction Capacitance T J =25°C 10 1 SS52BF SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 0.5 0 1.0 1.5 1000 500 100 SS52BF/SS54BF SS54F/SS520F SS56BF-SS520BF 20 10 2.0 0.1 10 1 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 175 150 125 100 75 50 25 Junction Capacitance ( pF) 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 Number of Cycles at 60Hz ２０１４－０３ ０１版 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ