HBCA144ES6R

Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 1/8
CYStech Electronics Corp.
PNP and NPN Dual Digital Transistors
HBCA144ES6R
Features
•Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•One DTA144E chip and one DTC144E chip in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference.
•Pb-free lead plating and halogen-free package.
Equivalent Circuit
Outline
SOT-363
HBCA144ES6R
RBE2
RB2
TR1
TR2
RB1
RBE1
RB1=47kΩ , RB2=47kΩ
RBE1=47kΩ , RBE2=47kΩ
Ordering Information
Device
Package
Shipping
Marking
HBCA144ES6R-0-T1-G
SOT-363
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
13
HBCA144ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Supply Voltage
Input Voltage
VCC
VIN
IO
Output Current
IO(max.)
Pd
Tj
Tstg
Total Power Dissipation
Junction Temperature
Storage Temperature
Limits
Tr1(NPN)
Tr2(PNP)
50
-50
-10~+40
-40~+10
30
-30
100
-100
150 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 120mW per element must not be exceeded.
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min.
VI(off)
VI(on)
3
VO(on)
II
IO(off)
GI
68
R1
32.9
R2/R1
0.8
fT
-
Typ.
47
1
250
Max. Unit
0.5
V
V
0.3
V
0.18 mA
0.5
μA
61.1 kΩ
1.2
MHz
Test Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=2mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min.
VI(off)
VI(on)
-3
VO(on)
II
IO(off)
GI
68
R1
32.9
R2/R1
0.8
fT
-
Typ.
47
1
250
Max. Unit
-0.5
V
V
-0.3
V
-0.18 mA
-0.5
μA
61.1 kΩ
1.2
MHz
Test Conditions
VCC=-5V, IO=-100μA
VO=-0.3V, IO=-2mA
IO/II=-10mA/-0.5mA
VI=-5V
VCC=-50V, VI=0V
VO=-5V, IO=-5mA
VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA144ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 3/8
Characteristic Curves
•Tr1(NPN)
DC Current Gain vs Output Current
Output Voltage vs Output Current
1000
Output Voltage---Vo(on)(mV)
Current Gain--- HFE
1000
100
Vo = 5V
10
100
Io / Ii = 20
1
10
0.1
1
10
Output Current --Io(mA)
100
1
Input Voltage vs Output Current (ON Characteristics)
100
Output Current vs Input Voltage (OFF
Characteristics)
10
10
Vo = 0.3V
Output Current --- Io(mA)
Input Voltage --- Vi(on)(V)
10
Output Current ---Io(mA)
1
0.1
Vcc = 5V
1
0.1
0.1
HBCA144ES6R
1
10
Output Current --- Io(mA)
100
0.1
1
Input Voltage --- Vi(off)(V)
10
CYStek Product Specification
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 4/8
CYStech Electronics Corp.
•Tr2(PNP)
DC Current Gain vs Output Current
Output Voltage vs Output Current
1000
Output Voltage---Vo(on)(mV)
Current Gain--- HFE
1000
100
Vo=5V
100
Io/Ii=20
10
10
1
10
Output Current---Io(mA)
1
100
100
10
Output Current ---Io(mA)
Input Voltage vs Output Current (ON Characteristics)
Output Current vs Input Voltage (OFF Characteristics)
100
Output Current --- Io(mA)
Input Voltage --- Vi(on)(V)
10
Vo=0.3V
Vcc=5V
10
1
0.1
1
0.1
1
10
Output Current ---Io(mA)
100
0.1
1
10
Input Voltage --- Vi(off)(V)
100
Power Derating Curves
Power Dissipation---PD(mW)
160
140
Dual
120
Single
100
80
60
40
20
0
0
HBCA144ES6R
50
100
150
Ambient Temperature --- Ta(℃ )
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 5/8
Recommended Soldering Footprint
HBCA144ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
Pin #1
HBCA144ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBCA144ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C155S6R
Issued Date : 2010.02.04
Revised Date : 2013.09.06
Page No. : 8/8
SOT-363 Dimension
Marking:
●
Date Code:
Year + Month
Year : 6→2006,
7→2007,…, etc
Month : 1→Jan
2→Feb, …, 9→
Sep, A→Oct, B
→Nov, C→Dec
13
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBCA144ES6R
CYStek Product Specification