HBA143ES6R

Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 1/6
CYStech Electronics Corp.
Dual PNP Digital Transistors
HBA143ES6R
Features
•Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•Two DTA143E chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference.
•Complements the HBC143ES6R.
•Pb-free package.
Equivalent Circuit
Outline
SOT-363R
HBA143ES6R
RBE2
RB2
TR1
TR2
RB1
RBE1
RB1=4.7kΩ , RB2=4.7 kΩ
RBE1=4.7kΩ , RBE2=4.7 kΩ
HBA143ES6R
CYStek Product Specification
Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Parameter
Symbol
Supply Voltage
Input Voltage
Limits
VCC
VIN
IO
Output Current
-50
-30~+10
-100
-100
200 (Note)
150
-55~+150
IO(max.)
Pd
Tj
Tstg
Power Dissipation
Junction Temperature
Storage Temperature
Unit
V
V
mA
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-3
20
3.29
0.8
-
Typ.
4.7
1
250
Max.
-0.5
-0.3
-1.8
-0.5
6.11
1.2
-
Unit
V
V
V
mA
μA
kΩ
MHz
Test Conditions
VCC=-5V, IO=-100μA
VO=-0.3V, IO=-20mA
IO/II=-10mA/-0.5mA
VI=-5V
VCC=-50V, VI=0V
VO=-5V, IO=-10mA
VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
Ordering Information
Device
HBA143ES6R
HBA143ES6R
Package
SOT-363
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
0J
CYStek Product Specification
Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Output Current
Output Voltage vs Output Current
1
Output Voltage---V O(ON)(V)
1000
Current Gain---G I
VO = 5V
100
10
1
Io / Ii = 20
0.1
0.01
0.1
0.1
1
10
Output Current---I O(mA)
1
100
100
Output Current---I O(mA)
Input Voltage vs Output Current(ON characteristics)
Output Current vs Input Voltage(OFF characteristics)
10
Output Current---I O(mA)
100
Input Voltage---VI(ON) (V)
10
Vo = 0.3V
10
Vcc = 5V
1
0.1
0.01
1
0.1
1
10
100
Output Current---I O(mA)
0
1
2
3
Input Voltage---VI(OFF)(V)
Power Derating Curves
Power Dissipation---P D(mW)
250
200
Dual
Single
150
100
50
0
0
HBA143ES6R
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
HBA143ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBA143ES6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 6/6
SOT-363 Dimension
Marking:
Date Code:
Year + Month
Year : 6→2006,
7→2007,…, etc
Month : 1→Jan
2→Feb, …, 9→
Sep, A→Oct, B
→Nov, C→Dec
0J
Device
Code
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBA143ES6R
CYStek Product Specification