MMBD6100LT1

Monolithic Dual Switching Diode
MMBD6100LT1
ANODE
1
3
CATHODE
2
ANODE
3
1
2
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
Symbol
PD
Max
225
Unit
mW
R θ JA
PD
1.8
556
300
mW/°C
°C/W
mW
R θ JA
T J , T stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
CASE
318–08, STYLE9
SOT– 23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD6100LT1 = 5BM
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V (BR)
70
—
Vdc
IR
—
0.1
µ Adc
0.55
0.85
0.7
1.1
t rr
—
4.0
ns
C
—
2.5
pF
OFFCHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 50 Vdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc,IR(REC)=1.0mAdc) (Figure 1)
Capacitance(VR=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
VF
Vdc
G23–1/2
MMBD6100LT1
+10 V
2.0 k
820 Ω
100 µH
IF
0.1 µF
tp
tr
0.1µF
IF
t
t rr
10%
t
90%
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
50 Ω OUTPUT
PULSE
GENERATOR
i
IR
INPUT SIGNAL
V
R(REC)
= 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
R
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
10
I R, REVERSE CURRENT ( µA)
T A = 85°C
T A= –40°C
10
T A = 25°C
1.0
T A =150°C
T A =125°C
1.0
T A =85°C
0.1
T A =55°C
0.01
T A =25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
50
1.0
C D , DIODE CAPACITANCE (pF)
I F , FORWARD CURRENT (mA)
100
0.9
0.8
0.7
0.6
0
2.0
4.0
6.0
8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G23–2/2